Name: ONSEMI 4N25M
Brand: ONSEMI
Availability: InStock

产品实拍图

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产品应用与封装尺寸

图纸取自原厂规格书，点击可放大查看原始尺寸标注。

引脚定义与内部结构

引脚	符号	名称
3	A
4	EMITTER
5	COLLECTOR
6	CASE
7	V

数据来源：原厂规格书引脚图

关键参数速览

正向电压 VF: 1.50
电流传输比 CTR: 100
隔离电压 VISO: 4170
工作温度 TA: −40 to +100

产品特点 Features

Minimum Current Transfer Ratio at I = 10 mA, V = 10 V:
♦ 10% for 4N27M and 4N28M MARKING DIAGRAM
♦ 20% for 4N25M and 4N26M
♦ 100% for 4N35M and 4N36M and 4N37M
♦ UL1577, 4,170 VAC for 1 Minute
RMS VXYYQ
150°C
Temperature Min. (Tsmin)
200°C
Temperature Max. (Tsmax)
Time (t ) from (Tsmin to Tsmax) 60–120 seconds
Ramp−up Rate (t to t ) 3°C/second max.
217°C
Liquidous Temperature (T )
Time (t ) Maintained Above (T ) 60–150 seconds
Peak Body Package Temperature 260°C +0°C / –5°C

绝对最大额定值 Absolute Maximum Ratings（TA = 25°C）

超过下表数值可能造成器件永久损坏，设计时请留余量。

符号	参数	最大	单位
T Storage Temperature		−40 to +125	°C
T Operating	Temperature	−40 to +100	°C
T Junction Temperature		−40 to +125	°C
T Lead Solder	Temperature	260 for 10 seconds	°C
P Total Device	Power Dissipation @ T = 25°C	270	mW
Derate Above	25°C	2.94	mW/°C
I DC / Average	Forward Input Current	60	mA
I (pk) Forward Current	– Peak (300 µs, 2% Duty Cycle)	3	A
P LED Power	Dissipation @ T = 25°C	120	mW
Derate Above	25°C	1.41	mW/°C
V Collector−to−Emitter	Voltage	30	V
V Collector−to−Base	Voltage	70	V
V Emitter−to−Collector	Voltage	7	V
P Detector Power	Dissipation @ T = 25°C	150	mW
Derate Above	25°C	1.76	mW/°C

数据来源：原厂规格书

安全与绝缘额定值（DIN EN/IEC 60747−5−5）

符号	参数	值	单位
	4N25M, 4N26M, 4N27M, 4N28M, 4N35M,	4N36M, 4N37M
Installation Classifications per	DIN VDE 0110/1.89 Table 1, <150 V <300 V		I–IV I–IV
Pollution Degree (DIN VDE	0110/1.89)		2
Comparative Tracking Index			175
V Input−to−Output	Test Voltage, Method A, V x 1.6 = V , Type and	Sample Test 1360	V
PR	IORM PR		peak
with t = 10 s,	Partial Discharge < 5 pC
Input−to−Output	Test Voltage, Method B, V x 1.875 = V , 100%	Production Test 1594	V
with t = 1 s, Partial	Discharge < 5 pC
V Highest Allowable	Over−Voltage	6000	V
External Creepage		≥7	mm
External Clearance		≥7	mm
External Clearance	(for Option TV, 0.4” Lead Spacing)	≥10	mm
T Case Temperature	(Note 1)	175	°C
I Input Current (Note	1)	350	mA
P Output Power (Note	1)	800	mW
R Insulation Resistance	at T , V = 500 V (Note 1)	>109	kΩ
	4N25M, 4N26M, 4N27M, 4N28M,	4N35M, 4N36M, 4N37M

电气特性 Electrical Characteristics（TA = 25°C）

符号	参数	测试条件	最小	典型	最大	单位
V Input	Forward Voltage	I = 10 mA	−	1.18	1.50	V
BV	Collector−to−Emitter Breakdown Voltage	I = 1.0 mA, I = 0	30	100	−	V
BV	Collector−to−Base Breakdown Voltage	I = 100 µA, I = 0	70	120	−	V
BV	Emitter−to−Collector Breakdown Voltage	I = 100 µA, I = 0	7	10	−	V
I	Collector−to−Emitter Dark Current	V = 10 V, I = 0	−	1	50	nA
I	Collector−to−Base Dark Current	V = 10 V	−	−	20	nA
C Capacitance		V = 0 V, f = 1 MHz	−	8	−	pF
CTR Current	Transfer Ratio, I = 10 mA,	V = 10 V 4N35M, 4N36M, 4N37M	100	−	−	%
		4N25M, 4N26M	20	−	−
		4N27M, 4N28M	10	−	−
	I = 10 mA,	V = 10 V, 4N35M, 4N36M, 4N37M	40	−	−
	I = 10 mA,	V = 10 V, 4N35M, 4N36M, 4N37M	40	−	−
V	Collector−to−Emitter I = 2 mA, I	= 50 mA 4N25M, 4N26M, 4N27M,	−	−	0.5	V
	I = 0.5 mA,	I = 10 mA 4N35M, 4N36M, 4N37M	−	−	0.3
T	Non−Saturated I = 10 mA,	V = 10 V, 4N25M, 4N26M, 4N27M,	−	2	−	µs
Turn−on	Time R = 100 kΩ	(Figure 11) 4N28M
	I = 2 mA, V	= 10 V, 4N35M, 4N36M, 4N37M	−	2	10
T Turn−off	Time I = 10 mA,	V = 10 V, 4N25M, 4N26M, 4N27M,	−	2	−	µs
	I = 2 mA, V	= 10 V, 4N35M, 4N36M, 4N37M	−	2	10
V Input−Output	Isolation Voltage	t = 1 Minute	4170	−	−	VAC
C Isolation	Capacitance	V = 0 V, f = 1 MHz	−	0.2	−	pF
R Isolation	Resistance	V = ±500 VDC, T = 25°C	1011	−	−	kΩ

特性曲线（Typical Performance Curves）

应用领域 Applications

ON = LogoPower Supply Regulators4N25 = Specific Device CodeMicroprocessor Inputs this option)X = One−Digit Year CodeYY = Digit Work WeekQ = Assembly Package CodeSCHEMATICANODE 1 6 BASECATHODE 2 5 COLLECTORN/C 3 4 EMITTERParameter Characteristics

资料下载

📄 4N25M 规格书 PDF

规格书为原厂公开资料，点击在新窗口打开下载。

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