产品应用与封装尺寸
图纸取自原厂规格书，点击可放大查看原始尺寸标注。
引脚定义与内部结构
| 引脚 | 符号 | 名称 |
|---|---|---|
| 3 | V | |
| 4 | EMITTER | |
| 5 | COLLECTOR | |
| 6 | BASE |
数据来源：原厂规格书引脚图
关键参数速览
- 正向电压 VF
- H11B1M,
- 正向电流 IF
- H11B1M,
- 集电极-发射极电压 VCEO
- 60
- 工作温度 TA
- -40 to +100
产品特点 Features
- High Sensitivity to Low Input Drive Current The 4N29M, 4N30M, 4N32M, 4N33M, H11B1M, and
- Meets or Exceeds All JEDEC Registered TIL113M have a gallium arsenide infrared emitter opti- H11B1M,
- Specifications cally coupled to a silicon planar photodarlington.
- Safety and Regulatory Approvals:
- UL1577, 4,170 VAC for 1 Minute
- DIN-EN/IEC60747-5-5, 850 V Peak Working TIL113M
- 4N29M,
绝对最大额定值 Absolute Maximum Ratings（TA = 25°C）
超过下表数值可能造成器件永久损坏，设计时请留余量。
| 符号 | 参数 | 值 | 单位 |
|---|---|---|---|
| 4N32M, | |||
| T Storage | Temperature | -40 to +125 | °C |
| T Operating OPR | Temperature | -40 to +100 | °C 4N33M, |
| T Junction | Temperature | -40 to +125 | °C |
| T Lead | Solder Temperature | 260 for 10 seconds | °C |
| Total | Device Power Dissipation @ T = 25°C A | 270 | mW H11B1M, |
| Derate | Above 25°C | 3.3 | mW/°C |
| I Continuous | Forward Current | 80 | mA TIL113M |
| I (pk) Forward | Current – Peak (300 µs, 2% Duty Cycle) | 3.0 | A |
| LED Power | Dissipation @ T = 25°C | 120 | mW |
| Derate | above 25°C | 2.0 | mW/°C — 6-Pin |
| BV Collector-Emitter | Breakdown Voltage | 30 | V |
| BV Collector-Base | Breakdown Voltage | 30 | V |
| BV Emitter-Collector | Breakdown Voltage | 5 | V |
| Detector | Power Dissipation @ T = 25°C | 150 | mW General |
| Derate | Above 25°C | 2.0 | mW/°C |
| I Continuous | Collector Current | 150 | mA |
数据来源：原厂规格书
安全与绝缘额定值（DIN EN/IEC 60747−5−5）
| 符号 | 参数 | 值 | 单位 |
|---|---|---|---|
| 4N29M, | |||
| Installation Classifications | per DIN VDE < 150 V RMS | I–IV | |
| 0110/1.89 Table 1, For Rated | Mains Voltage < 300 V | I–IV | 4N32M, |
| Pollution Degree (DIN VDE | 0110/1.89) | 2 | 4N33M, |
| Comparative Tracking Index | 175 | H11B1M, | |
| Input-to-Output | Test Voltage, Method A, V x 1.6 = V | , | |
| IORM PR | 1360 | V | |
| Type and Sample | Test with t = 10 s, Partial Discharge < | 5 pC | peak |
| Input-to-Output | Test Voltage, Method B, V x 1.875 = | V , | |
| IORM | PR 1594 | V | |
| 100% Production | Test with t = 1 s, Partial Discharge < 5 m | pC | peak TIL113M |
| V Highest Allowable | Over-Voltage | 6000 | V |
| External | Creepage | ≥ 7 | mm |
| External | Clearance | ≥ 7 | mm 6-Pin |
| External | Clearance (for Option TV, 0.4" Lead Spacing) | ≥ 10 | mm |
| T Case Temperature(1) | 175 | °C DIP | |
| I Input Current(1) | 350 | mA | |
| P Output Power(1) | 800 | mW | |
| R Insulation | Resistance at T , V = 500 V(1) | > 109 | Ω 4N29M, |
电气特性 Electrical Characteristics（TA = 25°C）
| 符号 | 参数 | 测试条件 | 器件 | 最小 | 典型 | 最大 | 单位 |
|---|---|---|---|---|---|---|---|
| 4N30M, 4N32M, | |||||||
| 4NXXM | 1.2 | 1.5 | V | ||||
| V F Input | Forward Voltage(2) | I F = 10 mA | H11B1M, | ||||
| 0.8 | 1.2 | 1.5 | V 4N33M, | ||||
| V = 3.0 V | 4NXXM | 0.001 | 100 | µA | |||
| V = 6.0 V | 0.001 | 10 | µA | ||||
| C | Capacitance(2) | V = 0V, f = 1.0 MHz | All | 150 | pF H11B1M, | ||
| Collector-Emitter Breakdown | 30 | 60 | V | ||||
| BV | I = 1.0 mA, I = 0 | TIL113M | |||||
| CEO | Voltage(2) | C B | TIL113M | ||||
| H11B1M | 25 | 60 | V | ||||
| BV | I = 100 µA, I = 0 | All | 30 | 100 | V | ||
| CBO | Voltage(2) | C E | |||||
| 4NXXM | 5.0 | 10 | V | ||||
| Emitter-Collector Breakdown | — | ||||||
| BV ECO | Voltage(2) | I E = 100 µA, I B = 0 | H11B1M, | ||||
| 7 | 10 | V 6-Pin | |||||
| I | V = 10 V, Base Open | All | 1 | 100 | nA 4N29M, 4N30M, 4N32M, | ||
| 50 (500) | mA (%) | ||||||
| I | 10 (100) | mA (%) 4N33M, |
特性曲线（Typical Performance Curves）
