产品应用与封装尺寸
图纸取自原厂规格书，点击可放大查看原始尺寸标注。
关键参数速览
- 正向电压 VF
- 1.7
- 电流传输比 CTR
- 5 V
- 集电极-发射极电压 VCEO
- 70
- 隔离电压 VISO
- DC 500
产品特点 Features
- The CNY17 contains a light emitting diode opti- • High collector-emitter voltage cally coupled to a photo-transistor. It is packaged in a (V = 70 V)
- 6-pin DIP package and available in wide-lead spacing
安全与绝缘额定值（DIN EN/IEC 60747−5−5）
| 包装 | and | lead | bend | SMD | 包装2 | Collector-emitter |
|---|---|---|---|---|---|---|
| option | and | lead | bend | SMD | option. | Collector-emitter |
| (V = 5000 Vrms) | ||||||
| voltage | is | above | 70 V. | Response | time, | t , is typically |
电气特性 Electrical Characteristics（TA = 25°C）
| 参数 | 符号 | 最小 | 典型 | 最大 | 单位 | 测试条件 |
|---|---|---|---|---|---|---|
| Forward Voltage | V | – | 1.4 | 1.7 | V | I = 60 mA |
| Terminal Capacitance | C | – | – | 100 | pF | V = 0, f = 1 MHz |
| Collector Dark Current | I | – | – | 50 | nA | V = 10 V |
| Collector-Emitter Breakdown | Voltage BV CEO | 70 | – | – | V | I = 0.1 mA, I = 0 C F |
| Emitter-Collector Breakdown | Voltage BV ECO | 6 | – | – | V | I = 10 µA, I = 0 E F |
| Collector-Base Breakdown Voltage | BV CBO | 70 | – | – | V | I = 0.1 mA, I = 0 C F |
| Collector Current | I | 4 | – | 32 | mA | I = 10 mA |
| CNY17-2 | 63 | – | 125 | |||
| CNY17-3 | 100 | – | 200 | |||
| CNY17-4 | 160 | – | 320 | |||
| Collector-Emitter Saturation | Voltage V CE(sat) | – | – | 0.3 | V | I = 10 mA, I = 2.5 mA F C |
| Response Time (Rise) | t r | – | 5 | 10 | µs | V = 5 V, I = 10 mA CE C |
| Response Time (Fall) | t | – | 5 | 10 | µs | R = 100 Ω |
| Isolation Resistance | R | 1 x 1011 | – | – | Ω | DC 500 V |
| 40 ~ 60% R.H. | ||||||
| Floating Capacitance | C | – | – | 2 | pF | V = 0, f = 1 MHz |