Name: TOSHIBA TLP620-4(GB,F)
Brand: TOSHIBA
Availability: InStock

产品实拍图

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关键参数速览

超过下表数值可能造成器件永久损坏，设计时请留余量。

Characteristic	符号	TLP620−2	单位
	TLP620	TLP620−4
Forward current	IF (RMS) 60	50	mA
Forward current derating	ΔIF / °C −0.7 (Ta ≥	39°C) −0.5 (Ta ≥ 25°C)	mA / °C
Pulse forward current	IFP 1	(100μs pulse, 100pps)	A
Power dissipation (1 circuit)	PD 100	70	mW
Power dissipation derating	ΔPD / °C −1.0	−0.7	mW / °C
Junction temperature	Tj	125	°C
Collector−emitter voltage	VCEO	55	V
Emitter−collector voltage	VECO	7	V
Collector current	IC	50	mA
(1 circuit)	PC 150	100	mW
	ΔPC / °C −1.5	−1.0	mW / °C
derating (1 circuit) (Ta ≥ 25°C)
Junction temperature	Tj	125	°C
Storage temperature range	Tstg	−55~125	°C
Operating temperature range	Topr	−55~100	°C
Lead soldering temperature	Tsold	260 (10s)	°C
Total package power dissipation	PT 250	150	mW
	ΔPT / °C −2.5	−1.5	mW / °C
derating (Ta ≥ 25°C, 1 circuit)

数据来源：原厂规格书

包装	(D4)	型号
VDE	approved:	DIN EN 60747-5-2, certificate no.40009302
	Highest	permissible over voltage: 8000VPK
	(Note)	When an EN 60747-5-2 approved type is needed,
		please designate the “Option(D4)”.
Clearance:		6.4mm (min.)
	report	and estimated failure rate, etc). 2 2007-10-01

Characteristic	符号	测试条件	最小	典型	最大	单位
Forward voltage	VF IF	= ±10mA	1.0	1.15	1.3	V
Forward current	IF VF	= ±0.7V	―	2.5	20	μA
Capacitance	CT V	= 0, f = 1MHz	―	60	―	pF
breakdown voltage	V (BR) CEO IC	= 0.5mA	55	―	―	V
rotceteD breakdown voltage	V (BR) ECO IE	= 0.1mA	7	―	―	V
		VCE = 24V	―	10	100	nA
		VCE = 24V, Ta = 85°C	―	2	50	μA
	CCE	VCE = 0, f = 1MHz	―	10	―	pF
			50	―	600
				TLP620,TLP620−2,TLP620−4

规格书为原厂公开资料，点击在新窗口打开下载。

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