关键参数速览
- 集电极-发射极电压 VCEO
- −50
绝对最大额定值 Absolute Maximum Ratings（TA = 25°C）
超过下表数值可能造成器件永久损坏，设计时请留余量。
| 特性 | 符号 | 额定值 | 单位 |
|---|---|---|---|
| Collector-base voltage | VCBO | −50 | V |
| Collector-emitter voltage | VCEO | −50 | V |
| Emitter-base voltage | VEBO | −5 | V |
| Collector current | IC | −2 | A PW-MINI |
| Base current | IB PC | −0.4 500 | A JEDEC ― |
| Collector power dissipation | PC (Note 1) | mW | |
| Junction temperature | Tj | 150 | °C |
| Storage temperature range | Tstg | −55 to 150 1 | °C 2009-12-21 |
数据来源：原厂规格书
电气特性 Electrical Characteristics（TA = 25°C）
| 特性 | 符号 | 测试条件 | 最小 | 典型 | 最大 | 单位 |
|---|---|---|---|---|---|---|
| Collector cut-off current | ICBO VCB | = −50 V, IE = 0 | ― | ― | −0.1 | μA |
| Emitter cut-off current | IEBO VEB | = −5 V, IC = 0 | ― | ― | −0.1 | μA |
| Collector-emitter breakdown voltage | V (BR) CEO IC | = −10 mA, IB = 0 | −50 | ― | ― | V |
| VCE | = −2 V, IC = −0.5 A | 70 | ― | 240 | ||
| hFE (2) VCE | = −2 V, IC = −2.0 A | 20 | ― | ― | ||
| Collector-emitter saturation voltage | VCE (sat) IC | = −1 A, IB = −0.05 A | ― | ― | −0.5 | V |
| Base-emitter saturation voltage | VBE (sat) IC | = −1 A, IB = −0.05 A | ― | ― | −1.2 | V |
| Transition frequency | fT VCE | = −2 V, IC = −0.5 A | ― | 120 | ― | MHz |
| Collector output capacitance | Cob VCB | = −10 V, IE = 0, f = 1 MHz | ― | 40 | ― | pF |
| Turn-on time | ton | INPUT | ― 03 | 0.1 | ― | |
| Switching time Storage time | tstg | −30 | ― V | 1.0 | ― | μs |
| Fall time | tf | 2 | ― | 0.1 | ― | 2009-12-21 |
应用领域 Applications
产品应用与封装尺寸
图纸取自该型号原厂规格书的应用电路与封装尺寸章节，点击图片可放大查看原始尺寸标注。