产品应用与封装尺寸
图纸取自原厂规格书，点击可放大查看原始尺寸标注。
关键参数速览
- 电源电压 VCC
- GND; a 150Ω resistor
- 工作温度 TA
- Tj ≤ 150°C
绝对最大额定值 Absolute Maximum Ratings（TA = 25°C）
超过下表数值可能造成器件永久损坏，设计时请留余量。
| 参数 | 符号 | 值 | 单位 |
|---|---|---|---|
| Supply voltage for full short circuit | protection V | 50 | V |
| T =-40 ...+150°C | |||
| Output Voltage to V | V | 70 | V |
| Negative voltage slope at output | -dV /dt | 20 | V/µs |
| Load dump protection2) V = | V + V , V = 27 V V 4) | 70 | V |
| LoadDump | A s A Loaddump | ||
| R 3) = 8 , t = 200 ms; IN = low or | high, | ||
| each channel loaded with R = 20 | , | ||
| Operating temperature range | T | -40 ...+150 | °C |
| Storage temperature range | T | -55 ...+150 | |
| Power dissipation (DC)5) | T = 25°C: P | 3.0 | W |
| (all channels active) | T = 85°C: | 1.6 | |
| Maximal switchable inductance, | single pulse | ||
| V = 12V, T = 150°C5), | |||
| I = 2.5 A, E = 110 mJ, 0 Ω | one channel: Z | 23.0 | mH |
| I = 3.5 A, E = 278 mJ, 0 Ω | two parallel channels: | 30.0 |
数据来源：原厂规格书
电气特性 Electrical Characteristics（TA = 25°C）
| 参数 | and | Conditions, | each | of | the | two | channels | 符号 | 值 | 单位 |
|---|---|---|---|---|---|---|---|---|---|---|
| at Tj = | -40...+150°C, | Vbb = 24 V | unless | otherwise | specified | min typ | Max | |||
| Load | Switching | Capabilities | and | Characteristics | ||||||
| On-state | resistance | (V bb to | OUT); | IL | = | 2 A, V | ≥ 7V | |||
| each | channel, | T | = 25°C: | R | -- 90 | 105 m | ||||
| T = | 150°C: | -- 170 | 210 | |||||||
| two parallel | channels, | T | = 25°C: | -- 45 | 53 | |||||
| Infineon | Technologies | AG | 5 | BTS | 2003-Oct-01 723 GW | |||||
| at Tj = | -40...+150°C, | Vbb = 24 V | unless | otherwise | specified | min typ | Max | |||
| Nominal | load current | one | channel | active: | I | 2.5 2.9 | -- A | |||
| two | parallel | channels | active: | 4.0 4.2 | -- | |||||
| Device on | PCB7) , Ta | = 85°C, | Tj ≤ 150°C | |||||||
| Output | current while | GND | disconnected | or | pulled up 8); | I | -- -- | 1.0 mA | ||
| Turn-on | time9) | IN | to | 90% | V : | t | -- -- | 55 µ s | ||
| Turn-off | time | IN | to | 10% | V : | t | -- -- | 95 | ||
| Slew rate | on 9 | dV/dt | 1.0 -- | 5 V/ s | ||||||
| 10 to 30% | V , | R = 12 | : | |||||||
| Slew rate | off 9 | -dV/dt | 1.0 -- | 5 V/ s | ||||||
| 70 to 40% | V , | R = 12 | : | |||||||
| Operating | voltage | V | 7.0 -- | 58 V | ||||||
| Tj | =-40...+25°C: | V | -- 4 | 5.5 V | ||||||
| Tj | =+150°C: | -- -- | 7.0 | |||||||
| Overvoltage | protection10) | V | 58.5 63 | 69 V | ||||||
| Standby | current11 | T | j | =-40°C...+25°C: | I bb(off) | -- 13 | 23 A | |||
| T j | =+125°C12) : | -- | 23 | |||||||
| Off-State | output | current | (included | in | I | ) | I | -- 3 | -- µ A | |
| bb(off) | L(off) | |||||||||
| Operating | current | 13), V = | 5V, | |||||||
| one | channel | on: | I GND | -- 1.0 -- 2.0 | 1.5 mA 3.0 | |||||
| all | channels | on: | ||||||||
| 8) not subject | to production | test, | specified | by | design | |||||
| 12) not subject | to | production test, | specified | by | design | |||||
| Infineon | Technologies | AG | 6 | BTS | 2003-Oct-01 723 GW | |||||
| at Tj = | -40...+150°C, | Vbb = 24 V | unless | otherwise | specified | min typ | Max | |||
| Tj | =-40°C: | I L(lim) | -- 10 | 12 A | ||||||
| Tj | =25°C: | -- 9 | -- | |||||||
| Tj | =+150°C: | 5 8 | -- | |||||||
| Repetitive | short | circuit current | limit | 15), | ||||||
| T = T | each | channel | I | -- 8 | -- A | |||||
| j | jt | L(SCr) | ||||||||
| two | parallel | channels | -- 8 | -- | ||||||
| Initial short | circuit | shutdown | time | T | =25°C: | t | -- 2 | -- ms | ||
| j,start | off(SC) | |||||||||
| Output | clamp | (inductive load | switch | off)16) | ||||||
| at VON(CL) | = Vbb - | VOUT, IL = | 1 A | V | 59 64 | 70 V | ||||
| Thermal | overload | trip | temperature | T | 150 -- | -- °C | ||||
| Thermal | hysteresis | T | -- 10 | -- K | ||||||
| Drain-source | diode | voltage | (Vout > | Vbb) | 18) | -V | -- 650 | -- mV | ||
| GND current | in case | of 3A | inverse | current | 20 | I | -- -- | 15 mA | ||
| designed | for | continuous | repetitive | operation. | ||||||
| 15) not subject | to | production test, | specified | by | design | |||||
| 18) not subject | to | production test, | specified | by | design | |||||
| 19) not subject | to | production test, | specified | by | design | |||||
| In case | of an inverse | current | of 3A | the | both | status | outputs | must not be disturbed. | ||
| Infineon | Technologies | AG | 7 | BTS | 2003-Oct-01 723 GW | |||||
| at Tj = | -40...+150°C, | Vbb = 24 V | unless | otherwise | specified | min typ | Max | |||
| Open load | detection | current | 21) | I | -- 3 | -- µ A | ||||
| Open load | detection | voltage | V | 2.0 2.85 | 3.7 V | |||||
| Short circuit | detection | voltage | 22) | |||||||
| V (pin | 1,7,8,14) | to OUT1 | (pin | 12,13) | resp. | V | -- 4.0 | -- V | ||
| V (pin | 1,7,8,14) | to OUT2 | ( pin | 9,10) | ||||||
| Input and | Status | Feedback | 23) | |||||||
| Integrated | resistors; | T =25°C: | Input | R | -- 20 | -- k | ||||
| Status | pull up | R | -- 12 | -- k | ||||||
| Input turn-on | threshold | voltage | V | 1.2 -- | 2.2 V | |||||
| Input turn-off | threshold | voltage | V | 1.0 -- | -- V | |||||
| Input | threshold | hysteresis | V | -- 0.25 | -- V | |||||
| Off state | input | current | V = | 0.4 V: | I | 1 -- | 15 A | |||
| On state | input | current | V | = 5 V: | I | 10 25 | 50 A | |||
| Zener | limit voltage | V | 5.4 6.1 | -- V | ||||||
| Status | low voltage | V | = 5V: | V | -- -- | 0.4 | ||||
| 21) not subject | to | production test, | specified | by | design | |||||
| 22) not subject | to | production test, | specified | by | design | |||||
| If a ground | resistor | R is | used, | add | the | voltage | drop | across these resistors. | ||
| Infineon | Technologies | AG | 8 | 2003-Oct-01 |