产品应用与封装尺寸
图纸取自原厂规格书，点击可放大查看原始尺寸标注。
引脚定义与内部结构
| 引脚 | 符号 | 名称 |
|---|---|---|
| 4 | X | |
| 5 | COLLECTOR | |
| 6 | NC | |
| 7 | V |
数据来源：原厂规格书引脚图
关键参数速览
- 正向电压 VF
- 1.50
- 电流传输比 CTR
- 150
- 正向电流 IF
- 60
- 工作温度 TA
- −40 to +100
产品特点 Features
- PDIP6
- High BV : 70 V Minimum
- CEO CASE 646BX
- (CNY17XM, CNY17FXM, MOC8106M)
- Temperature Min. (Tsmin)
- Temperature Max. (Tsmax)
- Time (t ) from (Tsmin to Tsmax)
- RampkΩup Rate ( t to t )
- Liquidous Temperature (T )
- Time (t ) Maintained Above (T )
- Peak Body Package Temperature
- Time (t ) within 5kΩC of 260kΩC
- RampkΩdown Rate (T to T )
- Time 25kΩC to Peak Temperature
- 150kΩC
- 200kΩC
绝对最大额定值 Absolute Maximum Ratings（TA = 25°C）
超过下表数值可能造成器件永久损坏，设计时请留余量。
| 符号 | 参数 | 值 | 单位 |
|---|---|---|---|
| T Storage | Temperature | −40 to +125 | C |
| T Ambient | Operating Temperature | −40 to +100 | C |
| T Junction | Temperature | −40 to +125 | C |
| T Lead Solder | Temperature | 260 for 10 seconds | C |
| P Total Device | Power Dissipation @ 25C (LED plus detector) | 270 | mW |
| Derate | Linearly From 25C | ||
| I Continuous | Forward Current | 60 | mA |
| I (pk) Forward | Current – Peak (1 kΩs pulse, 300 pps) | 1.5 | A |
| P LED Power | Dissipation 25C Ambient | 120 | mW |
| Derate | Linearly From 25C | ||
| I Continuous | Collector Current | 50 | mA |
| V Collector−Emitter | Voltage | 70 | V |
| V Emitter | Collector Voltage | 7 | V |
| P Detector | Power Dissipation @ 25C | 150 | mW |
| Derate | Linearly from 25C |
数据来源：原厂规格书
安全与绝缘额定值（DIN EN/IEC 60747−5−5）
| 参数 | 特性 |
|---|---|
| CNY17 Series, | MOC8106M |
| ANODE 1 6 NC | ANODE 1 6 BASE |
| CATHODE 2 5 COLLECTOR | CATHODE 2 5 COLLECTOR |
| NC 3 4 EMITTER | NC 3 4 EMITTER |
| CNY17F1M/2M/3M/4M MOC8106M | CNY171M/2M/3M/4M |
| Figure 1. Schematics | |
| Compliance with the safety ratings shall be ensured by means of protective | circuits. |
| Installation Classifications per DIN VDE < 150 V | I–IV |
| 0110/1.89 Table 1, For Rated Mains | |
| Voltage < 300 V RMS | I–IV |
| Pollution Degree (DIN VDE 0110/1.89) | 2 |
| Comparative Tracking Index | 175 |
| V PR Input−to−Output Test Voltage, Method A, V IORM x 1.6 = | V PR , 1360 Vpeak |
| Type and Sample Test with t = 10 s, Partial Discharge | < 5 pC |
| Input−to−Output Test Voltage, Method B, V x 1.875 | = V , 1594 Vpeak |
| 100% Production Test with t = 1 s, Partial Discharge < | 5 pC |
| V Highest Allowable Over−Voltage | 6000 Vpeak |
| External Creepage | 7 mm |
| External Clearance | 7 mm |
| External Clearance (for Option TV, 0.4” Lead Spacing) | 10 mm |
| T Case Temperature (Note 1) | 175 C |
| I Input Current (Note 1) | 350 mA |
| P Output Power (Note 1) | 800 mW |
| R Insulation Resistance at T , V = 500 V (Note 1) | > 109 |
电气特性 Electrical Characteristics（TA = 25°C）
| 符号 | 参数 | 测试条件 | 器件 | 最小 | 典型 | 最大 | 单位 |
|---|---|---|---|---|---|---|---|
| V Input | Forward Voltage | I = 10 mA | All Devices | 1.0 | 1.15 | 1.50 | V |
| I = 60 mA | CNY17XM, CNY17FXM | 1.0 | 1.35 | 1.65 | V | ||
| C | Capacitance | V = 0 V, f = 1.0 MHz | All Devices | − | 18 | − | pF |
| BV | Collector−to−Emitter | I = 1 mA, I = 0 | All Devices | 70 | 100 | − | V |
| BV | Collector−to−Base | I = 10 kΩA, I = 0 | CNY17XM | 70 | 120 | − | V |
| BV | Emitter−to−Collector | I = 100 kΩA, I = 0 | All Devices | 7 | 10 | − | V |
| I | Collector−to−Emitter | V = 10 V, I = 0 | All Devices | − | 1 | 50 | nA |
| I | Collector−to−Base | V = 10 V, I = 0 | CNY17XM | − | − | 20 | nA |
| C | Collector−to−Emitter | V = 0, f = 1 MHz | All Devices | − | 8 | − | pF |
| C | Collector−to−Base | V = 0, f = 1 MHz | CNY17XM | − | 20 | − | pF |
| C | Emitter−to−Base | V = 0, f = 1 MHz | CNY17XM | − | 10 | − | pF |
| CTR | Current Transfer Ratio | I = 10 mA, V = 10 V | MOC8106M | 50 | − | 150 | % |
| I = 10 mA, V = 5 V | CNY171M, | CNY17F1M 40 | − | 80 | % | ||
| I = 10 mA, V = 5 V | CNY172M, | CNY17F2M 63 | − | 125 | % | ||
| I = 10 mA, V = 5 V | CNY173M, | CNY17F3M 100 | − | 200 | % | ||
| I = 10 mA, V = 5 V | CNY174M, | CNY17F4M 160 | − | 320 | % | ||
| V | Collector−Emitter | I = 0.5 mA, I = 5 mA | MOC8106M | − | − | 0.4 | V |
| I = 2.5 mA, I = 10 mA | CNY17XM/CNY17FXM | − | − | ||||
| ton | Turn−On Time | I = 2.0 mA, V = 10 V, R = 100 µ | All Devices | − | 2.0 | 10.0 | kΩs |
| toff | Turn−Off Time | I = 2.0 mA, V = 10 V, R = 100 µ | All Devices | − | 3.0 | 10.0 | kΩs |
| t | Delay Time | I = 10 mA, V = 5 V, R = 75 µ | CNY17XM/CNY17FXM | − | − | 5.6 | kΩs |
| t | Rise Time | I = 10 mA, V = 5 V, R = 75 µ | CNY17XM/CNY17FXM | − | − | 4.0 | kΩs |
| t | Storage Time | I = 10 mA, V = 5 V, R = 75 µ | CNY17XM/CNY17FXM | − | − | 4.1 | kΩs |
| t | Fall Time | I = 10 mA, V = 5 V, R = 75 µ | CNY17XM/CNY17FXM | − | − | 3.5 | kΩs |
| t | I = 20 mA, V = 5 V, R = 1 kµ | CNY171M/F1M | − | − | 5.5 | kΩs | |
| Delay Time | I = 10 mA, V = 5 V, R = 1 kµ | CNY172M/3M/4M | − | − | 8.0 | kΩs | |
| t | I = 20 mA, V = 5 V, R = 1 kµ | CNY171M/F1M | − | − | 4.0 | kΩs | |
| Rise Time | I = 10 mA, V = 5 V, R = 1 kµ | CNY172M/3M/4M | − | − | 6.0 | kΩs | |
| t | I = 20 mA, V = 5 V, R = 1 kµ | CNY171M/F1M | − | − | 34.0 | kΩs | |
| Storage Time | I = 10 mA, V = 5 V, R = 1 kµ | CNY172M/3M/4M | − | − | 39.0 | kΩs | |
| t | I = 20 mA, V = 5 V, R = 1 kµ | CNY171M/F1M | − | − | 20.0 | kΩs | |
| Fall Time | I = 10 mA, V = 5 V, R = 1 kµ | CNY172M/3M/4M | − | − | 24.0 | kΩs |
特性曲线（Typical Performance Curves）
