引脚定义与内部结构
| 引脚 | 符号 | 名称 |
|---|---|---|
| 1 | GND | |
| 2 | 18B20 | |
| 3 | TO-92 | |
| 4 | BIT | |
| 5 | GND | |
| 6 | BIT | |
| 7 | BIT | |
| 8 | V | |
| 9 | BIT | |
| 10 | BIT | |
| 11 | BIT | |
| 12 | BIT | |
| 13 | BIT | |
| 14 | BIT | |
| 15 | BIT |
数据来源：原厂规格书引脚图
关键参数速览
- 正向电流 IF
- if t > 960µs,
- 电源电压 VCC
- 1
- 工作温度 TA
- -55°C to +125°C
产品特点 Features
- environmental controls, temperature monitoring systems inside buildings, equipment, or machinery, and process monitoring and control systems.
- 1 2 3
- V DD 3 6 N.C.
- DQ 4 5 GND
- SO (150 mils)
- (DS18B20Z)
- Unique 1-Wire® Interface Requires Only One
- Port Pin for Communication
- Each Device has a Unique 64-Bit Serial Code
- Stored in an On-Board ROM
- Multidrop Capability Simplifies Distributed
- DQ 1 8 V DD
- 18B20
- DNG QD DD N.C. 2 7 N.C.
- V N.C. 3 6 N.C.
- GND 4 5 N.C.
电气特性 Electrical Characteristics（TA = 25°C）
| 参数 | 符号 | 条件 | 最小 | 典型 | 最大 | 单位 | 备注 |
|---|---|---|---|---|---|---|---|
| Supply Voltage | V | Local Power | +3.0 | +5.5 | V | 1 | |
| Pullup Supply | Parasite Power | +3.0 | +5.5 | ||||
| V | V | 1,2 | |||||
| Voltage | Local Power | +3.0 | V | ||||
| Thermometer | -10°C to +85°C | ±0.5 | |||||
| t | °C | 3 | |||||
| Error | -55°C to +125°C | ±2 | |||||
| Input Logic-Low | V | -0.3 | +0.8 | V | 1,4,5 | ||
| Input Logic-High | V | V + 0.3 | V | 1, 6 | |||
| Sink Current | I | V = 0.4V | 4.0 | mA | 1 | ||
| Standby Current | I | 750 | 1000 | nA | 7,8 | ||
| Active Current | I | V = 5V | 1 | 1.5 | mA | 9 | |
| DQ Input Current | I | 5 | µA | 10 | |||
| Drift | ±0.2 | °C | 11 | ||||
| transistor when | it is turned on; | thus: V | = V | + V | . | ||
| PU_ACTUAL | PU_IDEAL | TRANSISTOR | |||||
| 4) Logic-low voltages | are specified | at a sink current | of 4mA. | ||||
| 6) Logic-high | voltages are specified | at a source | current of | 1mA. | |||
| 7) Standby current | specified up to | +70°C. Standby | current | typically is | 3µA at +125°C. | ||
| 8) To minimize I | , DQ should be | within the | following ranges: | GND | ≤ DQ ≤ GND | + 0.3V or | |
| 11) Drift data is based | on a 1000-hour | stress test at | +125°C with | V = | 5.5V. | DS18B20 | |
| (-55°C to | +100°C; | V | = 3.0V | to 5.5V) | |||
| NV Write Cycle Time | t | 2 | 10 | ms | |||
| EEPROM Writes | N | -55°C to +55°C | 50k | writes | |||
| EEPROM Data Retention | t | -55°C to +55°C | 10 | years | |||
| 9-bit resolution | 93.75 | ||||||
| Temperature Conversion | 10-bit resolution | 187.5 | |||||
| t | ms | 1 | |||||
| Time | 11-bit resolution | 375 | |||||
| 12-bit resolution | 750 | ||||||
| Time to Strong Pullup | On t | 10 | µs | ||||
| Time Slot | t | 60 | 120 | µs | 1 | ||
| Recovery Time | t | 1 | µs | 1 | |||
| Write 0 Low Time | t | 60 | 120 | µs | 1 | ||
| Write 1 Low Time | t | 1 | 15 | µs | 1 | ||
| Read Data Valid | t | 15 | µs | 1 | |||
| Reset Time High | t | 480 | µs | 1 | |||
| Reset Time Low | t | 480 | µs | 1,2 | |||
| Presence-Detect High | t | 15 | 60 | µs | 1 | ||
| Presence-Detect Low | t | 60 | 240 | µs | 1 | ||
| Capacitance | C | 25 | pF |
应用领域 Applications
产品应用与封装尺寸
图纸取自该型号原厂规格书的应用电路与封装尺寸章节，点击图片可放大查看原始尺寸标注。