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EE-SX3081 光电元件

G Ground (GND) 18 < mm ≤ 30 ±0.65 (transmissive) Dark ON EE-SX3081 Light ON EE-SX4081 Note: 1. Hysteresis denotes the difference in forward LED 3. The following illustrations show the definition of re
原厂规格书参数现货供应

产品实拍图

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产品特点 Features

  • an IC chip with a built-in detector element and amplifier.
  • photo IC in turned from ON to OFF and when the photo IC in turned from OFF to ON.
  • Input Input
  • 2. The value of the response frequency is measured Output by rotating the disk as shown below. Output
  • 2.1 mm
  • EE-SX3081 EE-SX4081
  • 0.5 mm Disk
  • 0.5 mm
  • Engineering Data
  • Forward Current vs. Collector Forward Current vs. Forward LED Current vs. Supply Voltage
  • Dissipation Temperature Rating Voltage Characteristics (Typical) (Typical)
  • Ta = 25°C
  • )Am( R = 1 kΩ
  • )Am( )Am( L
  • C Ta = −30°C
  • F noitapissid I F Ta = 25°C TF I FT OFF (I FT ON)

绝对最大额定值 Absolute Maximum Ratings(TA = 25°C)

超过下表数值可能造成器件永久损坏,设计时请留余量。

列1列2
InputInput
EE-SX3081 )Am( CEE-SX4081 R = 1 kΩ Ta = −30°C
Low-level Output Voltage vs.Low-level Output Voltage vs. Am-
Output Current (Typical) I tuptuo levelbient Temperature Characteristics I = 16 mA tuptuo level
Ambient temperature Ta (°C)Ambient temperature Ta (°C)
Current Consumption vs. SupplyResponse Delay Time vs. Forward Repeat Sensing Position
rotsisnartR C C = 330 Ω
emitCenter of optical axis
2Photomicrosensor (Transmissive)
数据来源:原厂规格书

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