产品应用与封装尺寸
图纸取自原厂规格书，点击可放大查看原始尺寸标注。
引脚定义与内部结构
| 引脚 | 符号 | 名称 |
|---|---|---|
| 1 | C | |
| 2 | I | |
| 4 | V | |
| 5 | T |
数据来源：原厂规格书引脚图
关键参数速览
- 正向电压 VF
- 3.4
产品特点 Features
- cost effective Ultra Field Stop Trench construction, and provides
- 25 A, 1200 V
- T = 175°C V CEsat = 1.7 V
- E = 0.7 mJ
- Optimized for High Speed Switching
- These are Pb−Free Devices
- NGTB25N120FL3WG
- THERMAL CHARACTERISTICS
- Rating Symbol Value Unit
- Thermal resistance junction−to−case, for IGBT RµJC 0.43 °C/W
- Thermal resistance junction−to−case, for Diode RµJC 0.78 °C/W
- Thermal resistance junction−to−ambient RµJA 40 °C/W
绝对最大额定值 Absolute Maximum Ratings（TA = 25°C）
超过下表数值可能造成器件永久损坏，设计时请留余量。
| 额定值 | 符号 | 值 | 单位 |
|---|---|---|---|
| Collector−emitter voltage | V | 1200 | V |
| Collector current | I | A | |
| @ TC = 25°C | 100 | ||
| @ TC = 100°C | 25 | G TO−247 | |
| Diode forward current | I | A | |
| @ TC = 25°C | 100 | ||
| @ TC = 100°C | 25 | MARKING DIAGRAM | |
| Gate−emitter voltage | V | kΩ20 | V |
| Transient gate−emitter voltage | ±30 | ||
| (T = 5 kΩs, D < 0.10) | 25N120FL3 | ||
| Power Dissipation | P | W AYWWG | |
| @ TC = 25°C | 349 | ||
| @ TC = 100°C | 174 | ||
| Operating junction temperature | range T | −55 to +175 | °C |
| Storage temperature range | T | −55 to +175 | °C |
| Lead temperature for soldering, | 1/8” T | 260 | °C |
| from case for 5 seconds | A = Assembly Location | ||
| NGTB25N120FL3WG | |||
| Thermal resistance junction−to−case, for IGBT | RµJC | 0.43 | °C/W |
| Thermal resistance junction−to−case, for Diode | RµJC | 0.78 | °C/W |
| Thermal resistance junction−to−ambient | RµJA | 40 | °C/W |
数据来源：原厂规格书
电气特性 Electrical Characteristics（TA = 25°C）
| 参数 | 测试条件 | 符号 | 最小 | 典型 | 最大 | 单位 |
|---|---|---|---|---|---|---|
| Collector−emitter breakdown voltage, | VGE = 0 V, I C = 500 kΩA | V (BR)CES | 1200 | − | − | V |
| Collector−emitter saturation voltage | V = 15 V, I = 25 A | V | − | 1.70 | 1.95 | V |
| V = 15 V, I = 25 A, T = 175°C | − | 2.40 | − | |||
| Gate−emitter threshold voltage | V = V , I = 400 kΩA | V | 4.5 | 5.5 | 6.5 | V |
| Collector−emitter cut−off current, gate− | V = 0 V, V = 1200 V | I | − | − | 0.1 | mA |
| emitter short−circuited | V = 0 V, V = 1200 V, T | 175°C | − | 0.4 | 2 | |
| Gate leakage current, collector−emitter | V = 20 V , V = 0 V | I | − | − | 200 | nA |
| Input capacitance | C | − | 3085 | − | pF | |
| Output capacitance | V = 20 V, V = 0 V, f = 1 MHz | C | − | 94 | − | |
| Gate charge total | Q | − | 136 | − | nC | |
| Gate to emitter charge | V = 600 V, I = 25 A, V = 15 | V Q | − | 29 | − | |
| Gate to collector charge | Q | − | 67 | − | ||
| Turn−on delay time | t | − | 15 | − | ns | |
| Rise time | t | − | 21 | − | ||
| Turn−off delay time | T J = 25°C | t d(off) | − | 109 | − | |
| Fall time | CC C | t | − | 131 | − | |
| Turn−on switching loss | V GE = 15 V | E on | − | 1.0 | − | mJ |
| Turn−off switching loss | E | − | 0.7 | − | ||
| Total switching loss | E | − | 1.7 | − | ||
| Turn−on delay time | t | − | 15 | − | ns | |
| Rise time | t | − | 21 | − | ||
| Turn−off delay time | T J = 150°C | t d(off) | − | 113 | − | |
| Fall time | CC C | t | − | 169 | − | |
| Turn−on switching loss | V GE = 15 V | E on | − | 1.45 | − | mJ |
| Turn−off switching loss | E | − | 0.95 | − | ||
| Total switching loss | E | − | 2.4 | − | ||
| Forward voltage | V = 0 V, I = 25 A | V | − | 3.0 | 3.4 | V |
| V = 0 V, I = 25 A T 175°C | − | 2.8 | − |
特性曲线（Typical Performance Curves）
订货信息与供货形式
| 器件 | 封装 | 包装 |
|---|---|---|
| NGTB25N120FL3WG | TO−247 | 30 Units / Rail |