关键参数速览
- 正向电压 VF
- 2.1
- 正向电流 IF
- 20
- 集电极-发射极电压 VCEO
- 2.0
产品特点 Features
- (1) Sixth generation
- (2) Low saturation voltage: V = 1.5 V (typ.) (I = 20 A)
- CE(sat) C
- (3) FRD included between emitter and collector
- 3. Packaging and Internal Circuit
- 1: Gate
- 2: Collector
- 3: Emitter
- TO-220SIS
- 1 2012-04-26
- GT20J341
- 6.2. Dynamic Characteristics (T = 25, unless otherwise specified) aaaa
- Characteristics Symbol Test Condition Min Typ. Max Unit
- Input capacitance C V = 10 V, V = 0 V, f = 100 kHz 1790 pF ies CE GE
- Switching time (turn-on delay time) t Inductive load 0.06 µs d(on)
- V = 300 V, I = 20 A,
绝对最大额定值 Absolute Maximum Ratings（TA = 25°C）
超过下表数值可能造成器件永久损坏，设计时请留余量。
| 特性 | 符号 | 额定值 | 单位 |
|---|---|---|---|
| Collector-emitter voltage | V | 600 | V |
| Gate-emitter voltage | V | ±25 | |
| Collector current (DC) (T = 25) | I | 20 | A |
| Collector current (DC) (T = 100) | I | 11 | |
| Collector current (pulsed) | I | 80 | |
| Diode forward current (DC) (T = 25) | I | 20 | |
| Diode forward current (DC) (T = 100) | I | 9 | |
| Short circuit withstand time | (Note 1) t | 5 | µs |
| Collector power dissipation (T = 25) | P | 45 | W |
| Junction temperature | T | 150 | |
| Storage temperature | T | -55 to 150 | |
| Junction-to-case thermal resistance (IGBT) | R | 2.78 | /W |
| Junction-to-case thermal resistance (diode) | 4.23 |
数据来源：原厂规格书
电气特性 Electrical Characteristics（TA = 25°C）
| 特性 | 符号 | 测试条件 | 最小 | 典型 | 最大 | 单位 |
|---|---|---|---|---|---|---|
| Gate leakage current | I V | = ±25 V, V = 0 V | | | ±100 | nA |
| Collector cut-off current | I V | = 600 V, V = 0 V | | | 100 | µA |
| Gate-emitter cut-off voltage | V I | = 2 mA, V = 5 V | 3.5 | 5.5 | 6.5 | V |
| Collector-emitter saturation voltage | V I | = 20 A, V = 15 V, T = 25 | | 1.5 | 2.0 | |
| Collector-emitter saturation voltage | V I | = 20 A, V = 15 V, T = | 125 | 1.8 | | |
| Diode forward voltage | V I = | 20 A, V = 0 V, T = 25 | | 1.5 | 2.1 | |
| Diode forward voltage | V I = | 20 A, V = 0 V, T = 125 2 | | 1.3 | GT20J341 | 2012-04-26 |
| Input capacitance | C V | = 10 V, V = 0 V, f = 100 | kHz | 1790 | | pF |
| Switching time (turn-on delay time) | t | Inductive load | | 0.06 | | µs |
| Switching time (rise time) | t CC | C | | 0.04 | | |
| Switching time (turn-on time) | t on T c = | 25, | | 0.16 | | |
| Switching time (turn-off delay time) | t See | Fig. 6.2.1, 6.2.2, 6.2.3 | | 0.24 | | |
| Switching time (fall time) | t | | 0.05 | | ||
| Switching time (turn-off time) | t | | 0.35 | | ||
| Switching loss (turn-on switching loss) | E | | 0.5 | | mJ | |
| Switching loss (turn-off switching loss) | E | | 0.4 | | ||
| Switching time (turn-on delay time) | t | Inductive load | | 0.07 | | µs |
| Switching time (rise time) | t CC | C | | 0.04 | | |
| Switching time (turn-on time) | t on T c = | 125, | | 0.2 | | |
| Switching time (turn-off delay time) | t See | Fig. 6.2.1, 6.2.2, 6.2.3 | | 0.23 | | |
| Switching time (fall time) | t | | 0.09 | | ||
| Switching time (turn-off time) | t | | 0.37 | | ||
| Switching loss (turn-on switching loss) | E | | 0.6 | | mJ | |
| Switching loss (turn-off switching loss) | E | 3 | | 0.5 | | 2012-04-26 |