产品实拍图
本型号暂无已核对的专属实拍图。为避免图文不符，本页不放同系列近似图；如需实物照片，请联系销售获取本批次实拍。
产品特点 Features
- Low On-Resistance: R
- DS(ON)
- Low Gate Threshold Voltage SOT-23
- Low Input Capacitance
- Dim Min Max
- 1.0 7
- V = 10V
- 9.0V 10V T = 25°C
- )A( 6.5V 6
- 0.8 6.0V
- TNERRUC 5.5V
- 4.5V 5
- 3.5V 5.5V V = 5.0V
- 3.0V GS
- ECRUOS-NIARD
- 0.4 V = 10V
绝对最大额定值 Absolute Maximum Ratings（TA = 25°C）
超过下表数值可能造成器件永久损坏，设计时请留余量。
| Characteristic | 符号 | 值 | 单位 |
|---|
| Drain-Source Voltage | V DSS | 60 | V |
| Drain-Gate Voltage R GS £ 1.0MW | V DGR | 60 | V |
| Gate-Source Voltage | Continuous | ±20 | |
| Pulsed V GSS | ±40 | V |
| Drain Current (Note 1) | Continuous | 115 | |
| Continuous @ | 100°C I D Pulsed | 73 800 | mA |
| Total Power Dissipation (Note 1) | | 300 | mW |
| Derating above T A = 25°C | d | 2.4 | mW/°C |
| Thermal Resistance, Junction to Ambient | Rq JA | 417 | °C/W |
数据来源：原厂规格书
电气特性 Electrical Characteristics（TA = 25°C）
| Characteristic | 符号 | 最小 | 典型 | 最大 | 单位 | 测试条件 |
|---|
| Drain-Source Breakdown Voltage | BV DSS | 60 | 70 | ¾ | V V | GS = 0V, I D = 10m A |
| Zero Gate Voltage Drain Current @ @ | T T C C = = 1 2 2 5 5 ° ° C C I DSS | ¾ | ¾ | 5 1 0 .0 0 | µA V | DS = 60V, V GS = 0V |
| Gate-Body Leakage | I GSS | ¾ | ¾ | ±10 | nA V | GS = ±20V, V DS = 0V |
| Gate Threshold Voltage | V GS(th) | 1.0 | ¾ | 2.5 | V V | DS = V GS , I D = 250m A |
| Static Drain-Source On-Resistance @ | T j = 25°C R | ¾ | 3.2 | 7.5 | W V | GS = 5.0V, I D = 0.05A |
| @ | T j = 125°C DS (ON) | | 4.4 | 13.5 | V | GS = 10V, I D = 0.5A |
| On-State Drain Current | I D(ON) | 0.5 | 1.0 | ¾ | A V | GS = 10V, V DS = 7.5V |
| Forward Transconductance | g FS | 80 | ¾ | ¾ | mS V | DS =10V, I D = 0.2A |
| Input Capacitance | C iss | ¾ | 22 | 50 | pF | |
| | | | | V | = 25V, V = 0V |
| Output Capacitance | C oss | ¾ | 11 | 25 | pF f = D | S 1.0MHz GS |
订货信息与供货形式
| 器件 | Packaging | 包装 |
|---|
| Device | Packaging | Shipping |
资料下载
规格书为原厂公开资料，点击在新窗口打开下载。
获取报价 / 申请样品
常备现货、免费送样、支持小批量试产。报出用量与封装要求，当天给报价与交期。
