绝对最大额定值 Absolute Maximum Ratings（TA = 25°C）
超过下表数值可能造成器件永久损坏，设计时请留余量。
| 特性 | 符号 | 额定值 | 单位 |
|---|---|---|---|
| Gate-drain voltage | VGDS | −50 | V |
| Gate current | IG | 10 | mA |
| Drain power dissipation | PD | 100 | mW |
| Junction temperature | Tj | 125 | °C |
| Storage temperature range | Tstg | −55~125 | °C |
数据来源：原厂规格书
电气特性 Electrical Characteristics（TA = 25°C）
| 特性 | 符号 | 测试条件 | 最小 | 典型 | 最大 | 单位 |
|---|---|---|---|---|---|---|
| Gate cut-off current | IGSS VGS | = −30 V, VDS = 0 | ⎯ | ⎯ | −1.0 | nA |
| Gate-drain breakdown voltage | V (BR) GDS VDS | = 0, IG = −100 μA | −50 | ⎯ | ⎯ | V |
| Drain current | VDS | = 10 V, VGS = 0 | 1.2 | ⎯ | 14.0 | mA |
| Gate-source cut-off voltage | VGS (OFF) VDS | = 10 V, ID = 0.1 μA | −0.2 | ⎯ | −1.5 | V |
| Forward transfer admittance | ⎪Yfs⎪ VDS | = 10 V, VGS = 0, f = 1 kHz | 4.0 | 15 | ⎯ | mS |
| Input capacitance | Ciss VDS | = 10 V, VGS = 0, f = 1 MHz | ⎯ | 13 | ⎯ | pF |
| NF (1) | ⎯ | 5 | ⎯ | |||
| Noise figure | dB | |||||
| NF (2) | 1 | ⎯ | 1 | ⎯ | 2007-11-01 |
应用领域 Applications
产品应用与封装尺寸
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图纸取自该型号原厂规格书的应用电路与封装尺寸章节，点击图片可放大查看原始尺寸标注。