Name: TOSHIBA 2SK3878(STA1,E,S)
Brand: TOSHIBA
Availability: InStock

产品实拍图

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关键参数速览

超过下表数值可能造成器件永久损坏，设计时请留余量。

Characteristic	符号	额定值	单位
Drain-source voltage	VDSS	900	V
Drain-gate voltage (RGS = 20 kΩ)	VDGR	900	V
Gate-source voltage	VGSS	±30	V
DC (Note	1) ID	9
Pulse (Note	1) IDP	27	2. DRAIN (HEATSINK)
Drain power dissipation (Tc = 25°C)	PD	150	W
(Note	EAS 2)	778	mJ
Avalanche current	IAR	9	A
Repetitive avalanche energy (Note	3) EAR	15	mJ
Storage temperature range	Tstg	−55~150	°C
Thermal resistance, channel to	case Rth (ch-c)	0.833	°C/W
Thermal resistance, channel to	ambient Rth (ch-a)	50 1	°C/W 2006-11-13

数据来源：原厂规格书

Characteristic	符号	测试条件	最小	典型	最大	单位
Gate leakage current	IGSS VGS	= ±30 V, VDS = 0 V	⎯	⎯	±10	μA
Drain-source breakdown voltage	V (BR) GSS IG	= ±10 μA, VDS = 0 V	±30	⎯	⎯	V
Drain cutoff current	IDSS VDS	= 720 V, VGS = 0 V	⎯	⎯	100	μA
Drain-source breakdown voltage	V (BR) DSS ID	= 10 mA, VGS = 0 V	900	⎯	⎯	V
Gate threshold voltage	Vth VDS	= 10 V, ID = 1 mA	2.0	⎯	4.0	V
Drain-source ON resistance	RDS (ON) VGS	= 10 V, ID = 4 A	⎯	1.0	1.3	Ω
Forward transfer admittance	⎪Yfs⎪ VDS	= 15 V, ID = 4 A	3.5	7.0	⎯	S
Input capacitance	Ciss		⎯	2200	⎯
Output capacitance	Coss		⎯	190	⎯
Rise time	tr		⎯	25	⎯
Turn-on time	ton		⎯	65	⎯
Switching time		Ω RL =	100 Ω			ns
Fall time	tf	VDD ∼− 400	⎯ V	20	⎯
Turn-off time	toff		⎯	120	⎯
	Qg		⎯	60	⎯
	VDD	∼− 400 V, VGS = 10 V, ID = 9	A			nC
Gate-source charge	Qgs		⎯	34	⎯
Gate-drain (“Miller”) charge	Qgd		⎯	26	⎯
Forward voltage (diode)	VDSF	IDR = 9 A, VGS = 0 V 2	⎯	⎯	−1.7	V 2006-11-13

Unit: mm2SK3878ID – VDSCOMMON SOURCETc = 25°CPULSE TEST 15)A( 8 106 5.25TNERRUCNIARDVGS = 4.5 V0 2 4 6 8 10

图纸取自该型号原厂规格书的应用电路与封装尺寸章节，点击图片可放大查看原始尺寸标注。

规格书为原厂公开资料，点击在新窗口打开下载。

常备现货、免费送样、支持小批量试产。报出用量与封装要求，当天给报价与交期。