关键参数速览
- 集电极-发射极电压 VCEO
- −0.3
绝对最大额定值 Absolute Maximum Ratings（TA = 25°C）
超过下表数值可能造成器件永久损坏，设计时请留余量。
| 特性 | 符号 | 额定值 | 单位 |
|---|---|---|---|
| Collector-base voltage | VCBO | −50 | V |
| Collector-emitter voltage | VCEO | −50 | V |
| Emitter-base voltage | VEBO | −5 | V |
| Collector current | IC | −150 | mA |
| Base current | IB | −30 | mA |
| Collector power dissipation | PC | 150 | mW |
| Junction temperature | Tj | 125 | °C |
| Storage temperature range | Tstg | −55~125 | °C |
数据来源：原厂规格书
电气特性 Electrical Characteristics（TA = 25°C）
| 特性 | 符号 | 测试条件 | 最小 | 典型 | 最大 | 单位 |
|---|---|---|---|---|---|---|
| Collector cut-off current | ICBO VCB | = −50 V, IE = 0 | ⎯ | ⎯ | −0.1 | μA |
| Emitter cut-off current | IEBO VEB | = −5 V, IC = 0 | ⎯ | ⎯ | −0.1 | μA |
| DC current gain | VCE | = −6 V, IC = −2 mA | 70 | ⎯ | 400 | |
| Collector-emitter saturation voltage | VCE (sat) IC | = −100 mA, IB = −10 mA | ⎯ | −0.1 | −0.3 | V |
| Transition frequency | fT VCE | = −10 V, IC = −1 mA | 80 | ⎯ | ⎯ | MHz |
| Collector output capacitance | Cob VCB | = −10 V, IE = 0, f = 1 MHz | ⎯ | 4 | 7 | pF |
| VCE | = −6 V, IC = −0.1 mA, f = 1 | kHz, | ||||
| Noise figure | NF | 1 | ⎯ | 1.0 | 10 | dB 2007-11-01 |
应用领域 Applications
产品应用与封装尺寸
图纸取自该型号原厂规格书的应用电路与封装尺寸章节，点击图片可放大查看原始尺寸标注。