产品应用与封装尺寸


图纸取自原厂规格书,点击可放大查看原始尺寸标注。
关键参数速览
- 正向电压 VF
- 1.50
- 正向电流 IF
- 4N36M,
- 电源电压 VCC
- 4N26M,
- 工作温度 TA
- -40 to +100
产品特点 Features
- Minimum Current Transfer Ratio at I = 10 mA, The general purpose optocouplers consist of a gallium
- 4N35M,
- V = 10 V: arsenide infrared emitting diode driving a silicon photo-
- 10% for 4N27M and 4N28M transistor in a standard plastic six-pin dual-in-line package.
- 20% for 4N25M and 4N26M
- 100% for 4N35M, 4N36M and 4N37M
- 4N36M,
- Safety and Regulatory Approvals:
- UL1577, 4,170 VAC for 1 Minute
- DIN-EN/IEC60747-5-5, 850 V Peak Working
- 4N37M
- 4N25M,
绝对最大额定值 Absolute Maximum Ratings(TA = 25°C)
超过下表数值可能造成器件永久损坏,设计时请留余量。
| 符号 | 参数 | 值 | 单位 |
|---|---|---|---|
| 4N27M, | |||
| T Storage | Temperature | -40 to +125 | °C |
| T Operating OPR | Temperature | -40 to +100 | °C 4N28M, |
| T Junction | Temperature | -40 to +125 | ºC |
| T Lead Solder | Temperature | 260 for 10 seconds | °C |
| Total Device | Power Dissipation @ T = 25°C A | 270 | mW 4N35M, |
| Derate Above | 25°C | 2.94 | mW/°C |
| I DC/Average F | Forward Input Current | 60 | mA 4N36M, |
| I (pk) Forward | Current – Peak (300 µs, 2% Duty Cycle) | 3 | A |
| LED Power | Dissipation @ T = 25°C A | 120 | mW 4N37M |
| Derate Above | 25°C | 1.41 | mW/°C |
| V Collector-to-Emitter | Voltage | 30 | V — |
| V Collector-to-Base | Voltage | 70 | V 6-Pin |
| V Emitter-to-Collector | Voltage | 7 | V |
| Detector Power | Dissipation @ T = 25°C | 150 | mW |
| Derate Above | 25°C | 1.76 | mW/°C |
数据来源:原厂规格书
安全与绝缘额定值(DIN EN/IEC 60747−5−5)
| 符号 | 参数 | 值 | 单位 |
|---|---|---|---|
| 4N25M, | |||
| Installation Classifications | per DIN VDE < 150 V RMS | I–IV | |
| 0110/1.89 Table 1, For Rated | Mains Voltage < 300 V | I–IV | 4N27M, |
| Pollution Degree (DIN VDE | 0110/1.89) | 2 | 4N28M, |
| Comparative Tracking Index | 175 | 4N35M, | |
| Input-to-Output | Test Voltage, Method A, V x 1.6 = V | , | |
| IORM PR | 1360 | V | |
| Type and Sample | Test with t = 10 s, Partial Discharge < | 5 pC | peak |
| Input-to-Output | Test Voltage, Method B, V x 1.875 = | V , | |
| 100% Production | Test with t = 1 s, Partial IORM Discharge < 5 | pC PR 1594 | V peak 4N36M, |
| V Highest Allowable | Over-Voltage | 6000 | V |
| External | Creepage | ≥ 7 | mm 4N37M |
| External | Clearance | ≥ 7 | mm |
| External | Clearance (for Option TV, 0.4" Lead Spacing) | ≥ 10 | mm 6-Pin |
| T Case Temperature(1) | 175 | °C | |
| I Input Current(1) | 350 | mA | |
| P Output Power(1) | 800 | mW General | |
| R Insulation | Resistance at T , V = 500 V(1) | > 109 | Ω 4N25M, |
电气特性 Electrical Characteristics(TA = 25°C)
| 符号 | 参数 | 测试条件 | 最小 | 典型 | 最大 | 单位 |
|---|---|---|---|---|---|---|
| 4N26M, 4N27M, | ||||||
| V Input | Forward Voltage | I = 10 mA | 1.18 | 1.50 | V 4N28M, | |
| BV | Collector-to-Emitter Breakdown | Voltage I = 1.0 mA, I = 0 | 30 | 100 | V | |
| BV | Collector-to-Base Breakdown | Voltage I = 100 µA, I = 0 | 70 | 120 | V | |
| BV | Emitter-to-Collector Breakdown | Voltage I = 100 µA, I = 0 | 7 | 10 | V 4N35M, | |
| I | Collector-to-Emitter Dark Current | V = 10 V, I = 0 | 1 | 50 | nA | |
| I | Collector-to-Base Dark Current | V = 10 V | 20 | nA | ||
| C | Capacitance | V = 0 V, f = 1 MHz 4N35M, | 4N36M, 100 | 8 | pF 4N36M, 4N37M % | |
| F | CE | — | ||||
| 4N25M, | 4N26M 20 | % | ||||
| 4N27M, | 4N28M 10 | % 6-Pin | ||||
| Collector-to-Emitter I F = 10 | mA, V CE = 10 V, 4N35M, | 4N36M, 40 | % | |||
| I F = 10 | mA, V CE = 10 V, 4N35M, 4N25M, | 4N36M, 40 4N26M, | % | |||
| I = 2 mA, | I = 50 mA | 0.5 | V Purpose | |||
| Collector-to-Emitter | 4N27M, | 4N28M | ||||
| Saturation | Voltage | 4N35M, | 4N36M, | |||
| I = 0.5 | mA, I = 10 mA | 0.3 | V | |||
| I F = 10 | mA, V CC = 10 V, 4N25M, | 4N26M, | 2 | µs | ||
| R = 100 | Ω (Figure 13) 4N27M, | 4N28M | ||||
| Turn-on | Time I C = 2 mA, | V CC = 10 V, 4N35M, | 4N36M, | |||
| 2 | 10 | µs | ||||
| I F = 10 | mA, V CC = 10 V, 4N25M, | 4N26M, | 2 | µs | ||
| R = 100 | Ω (Figure 13) 4N27M, | 4N28M | ||||
| T OFF Turn-off | Time | Optocouplers | ||||
| I C = 2 mA, | V CC = 10 V, 4N35M, | 4N36M, | ||||
| 2 | 10 | µs |
特性曲线(Typical Performance Curves)

