Name: LITEON 6N135-L
Brand: LITEON
Availability: InStock

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产品应用与封装尺寸

图纸取自原厂规格书，点击可放大查看原始尺寸标注。

引脚定义与内部结构

引脚	符号	名称
4	RECOGNITION
5	GND
6	VO
7	VB
8	VCC

数据来源：原厂规格书引脚图

关键参数速览

电流传输比 CTR: 5, 11
正向电流 IF: 1074 entitled
隔离电压 VISO: 60747-5-2
电源电压 VCC: 30
工作温度 TA: 100

产品特点 Features

15 kV/ µ s Minimum Common • High Voltage Insulation These diode-transistor optocoup-
Mode Transient Immunity at • Video Signal Isolation lers use an insulating layer
V = 1500 V (4503/0453) between a LED and an integrated
CM • Power Transistor Isolation photodetector to provide elec-
High Speed: 1 Mb/s in Motor Drives
These single channel optocoupoutput current for 1 TTL load and Schematic I
CC 8 lers are available in 8-Pin DIP, a 5.6 kΩ pull-up resistor. CTR for VCC
SO-8 and Widebody package these devices is 19% minimum at configurations. I = 16 mA. 2 IF
ANODE
The 6N135, HCPL-0500, and The HCPL-4502, HCPL-0452,
HCNW135 are for use in TTL/ and HCNW4502 provide the F I O 6
CATHODE

绝对最大额定值 Absolute Maximum Ratings（TA = 25°C）

超过下表数值可能造成器件永久损坏，设计时请留余量。

参数	符号	器件	最小	最大	单位	备注
Storage Temperature*	T		-55	125	°C
Operating Temperature*	T	8-Pin DIP	-55	100	°C
		Widebody	-55	85
Average Forward Input Current*	I			25	mA	1
Peak Forward Input Current*	I	8-Pin DIP				2
(50% duty cycle, 1 ms pulse width)		SO-8		50	mA
(50% duty cycle, 1 ms pulse width)		Widebody		40
Peak Transient Input Current*	I	8-Pin DIP Widebody Widebody		1 0.1 3	A
Input Power Dissipation*	P	8-Pin DIP Widebody		45 40	mW	3
Average Output Current* (Pin 6)	I			8	mA
Peak Output Current*	I			16	mA
Supply Voltage (Pin 8-5)	V		-0.5	30	V
Output Voltage (Pin 6-5)	V		-0.5	20	V
Supply Voltage* (Pin 8-5)	V		-0.5	15	V
Output Voltage* (Pin 6-5)	V		-0.5	15	V
Base Current* (Pin 7, except 4502/3,	0452/3) I			5	mA
Output Power Dissipation*	P			100	mW	4
1.6 mm below seating plane, 10	seconds T	8-Pin DIP		260	°C
up to seating plane, 10 seconds		Widebody		260	°C

数据来源：原厂规格书

安全与绝缘额定值（DIN EN/IEC 60747−5−5）

参数	符号	值
Widebody Packages	Switched Mode Power	output-transistor collector
from Temperature: 0 C	Isolation – TTL/TTL, TTL/	tional phototransistor coupler by
to 70 C	CMOS, TTL/LSTTL	reducing the base-collector
–V IORM = 630 V peak for	NC 1	8 VCC 8-Pin DIP (300 Mil)
Minimum External	L(101)	7.1
Minimum External	L(102)	7.4
Minimum Internal		0.08
Tracking Resistance	CTI	200
Isolation Group		IIIa
Option 300 - surface	mount	classification is
		SO-8 (400 Mil)
		NA 4.0 mm Measured from input terminals
		200 200 Volts DIN IEC 112/VDE 0303 Part 1
		(DIN VDE 0110, 1/89, Table 1)
		A in accordance with CECC 00802.

电气特性 Electrical Characteristics（TA = 25°C）

参数	符号	器件	最小	Typ.**	最大	单位	测试条件	图号	备注
Over recommended		temperature (T	= 0°C	to 70°C)	unless	otherwise	specified. See note 13.
Current	CTR*	6N135	7	18	50	% T = A	25°C V = 0.4 V I = O F	16 mA, 1, 2,	5, 11
Transfer Ratio		HCPL-0500					V =	4.5 V 4
		HCNW135	5	19			V = 0.5 V
		HCPL-2502	15		22	T =	25°C V = 0.4 V
			15	25			V = 0.5 V
		6N136	19	24	50	T =	25°C V = 0.4 V
		HCPL-0501	15	25			V = 0.5 V
Logic Low	V	6N135		0.1	0.4	V T =	25°C I = 1.1 mA I =	16 mA,
	OL					A	O F
Output Voltage		HCPL-0500					V =	4.5 V
		HCNW135		0.1	0.5		I = 0.8 mA
		6N136		0.1	0.4	T =	25°C I = 3.0 mA
		HCPL-4502/3		0.1	0.5		I = 2.4 mA
Logic High	I *			0.003	0.5	µA T =	25°C V = V = 5.5 V I =	0 mA 7
	OH					A	O CC F
Output Current				0.01	1	T =	25°C V = V = 15 V
					50		V = V = 15 V
Logic Low	I			50	200	µA I =	16 mA, V = Open, V = 15 V		13
	CCL					F	O CC
Logic High	I *			0.02	1	µA T =	25°C I = 16 mA, V = Open,		13
	CCH					A	F O
Supply Current					2		V = 15 V
Input Forward	V *	8-Pin DIP		1.5	1.7	V T =	25°C I = 16 mA	3
	F					A	F
		Widebody	1.45	1.68	1.85	T =	25°C I = 16 mA
Voltage		Widebody	3			I =	100 µA
Temperature	∆V /	8-Pin DIP		-1.6		mV/°C I =	16 mA
Input	C	8-Pin DIP		60		pF f = 1	MHz, V = 0 V
Transistor DC	h	8-Pin DIP		150		V =	5 V, I = 3 mA
	FE					O	O
Current Gain		SO-8		130		V =	0.4 V, I = 20 µA
		Widebody		180		V =	5 V, I = 3 mA
				160		V =	0.4 V, I = 20 µA
Over recommended	temperature	(T =	0°C to 70°C)	unless	otherwise		specified.
Input-Output	V	8-Pin DIP	3750			V rms	RH < 50%,		6, 14
Momentary		SO-8					t = 1 min.,
Withstand		Widebody	5000				T = 25°C		6, 15
		8-Pin DIP	5000						6, 12,
		(Option 020)							15
	I	8-Pin DIP			1	µA	45% RH, t = 5 s, V = 3 kVdc, T = 25°C		6, 16
Input-Output	R	8-Pin DIP		1012		Ω	V = 500 Vdc		6
		Widebody	1012	1013			T = 25°C
			1011				T = 100°C
Input-Output	C	8-Pin DIP		0.6		pF	f = 1 MHz		6
1. Derate linearly	above 70°C free-air	temperature	at a rate of	0.8 mA/°C	(8-Pin	DIP).
Derate linearly	above 85°C free-air	temperature	at a rate of	0.5 mA/°C	(SO-8).
2. Derate linearly	above 70°C free-air	temperature	at a rate of	1.6 mA/°C	(8-Pin	DIP).
Derate linearly	above 85°C free-air	temperature	at a rate of	1.0 mA/°C	(SO-8).
3. Derate linearly	above 70°C free-air	temperature	at a rate of	0.9 mW/°C	(8-Pin	DIP).
Derate linearly	above 85°C free-air	temperature	at a rate of	1.1 mW/°C	(SO-8).
4. Derate linearly	above 70°C free-air	temperature	at a rate of	2.0 mW/°C	(8-Pin	DIP).
Derate linearly	above 85°C free-air	temperature	at a rate of	2.3 mW/°C	(SO-8).
60747-5-2 Insulation	Related	Characteristics	Table if applicable.
60747-5-2 Insulation	Related	Characteristics	Table if applicable.

应用领域 Applications

High Speed: 1 Mb/s in Motor DrivesANODECATHODESelection GuideWidebodyHCPL-4502† HCPL-0452† HCNW4502†15 HCPL-25021,000 10 9 HCPL-55XX

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📄 6N135-L 规格书 PDF

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6N135-L 高速数字光耦