产品应用与封装尺寸


图纸取自原厂规格书,点击可放大查看原始尺寸标注。
引脚定义与内部结构

| 引脚 | 符号 | 名称 |
|---|---|---|
| 9 | 80 ± 0.25 | |
| 1 | 016 (0.040) | |
| 10 | 9 (0.430) | |
| 2 | 0 (0.080) | |
| 7 | 62 ± 0.25 | |
| 0 | 20 (0.008) | |
| 3 | 56 ± 0.13 0.33 (0.013) |
数据来源:原厂规格书引脚图
关键参数速览
- 隔离电压 VISO
- 1 kV; See Definitions
- 电源电压 VCC
- 6.0
- 工作温度 TA
- 3
产品特点 Features
- 10 MHz internal clock
- 1-bit, second-order sigma-delta modulator
- 16 bits resolution no missing codes (12 bits ENOB)
- 78 dB SNR
- 6 mV/°C maximum offset drift
- ±1% maximum gain error
- ACPL-7970 to form an isolated programmable two-chip
- A/D converter.
- figuration port. A second multiplexed input is available to allow measurements with a second isolated modulator without additional hardware. Refer to the HCPL-0872 data sheet for details.
- Notes:
- SPI and QSPI are trademarks of Motorola Corp.
- Power Supplies and Bypassing
- As shown in Figure 19, a floating power supply (which in
- PC Board Layout
- The design of the printed circuit board (PCB) should follow
- When sensing currents large enough to cause signifi- cant heating of the shunt, the temperature coefficient
绝对最大额定值 Absolute Maximum Ratings(TA = 25°C)
超过下表数值可能造成器件永久损坏,设计时请留余量。
| 参数 | 符号 | 最小 | 最大 | 单位 |
|---|---|---|---|---|
| Storage Temperature | T | -55 | +125 | °C |
| Ambient Operating Temperature | T | -40 | +105 | °C |
| Supply Voltage | V , V DD1 DD2 | -0.5 | 6.0 | V |
| Steady-State Input Voltage [1, 3] | V , V IN+ IN– | -2 | V + 0.5 DD1 | V |
| Two-Second Transient Input | Voltage [2] V , V IN+ IN– | -6 | V + 0.5 DD1 | V |
| Digital Output Voltages | MCLK, MDAT | -0.5 | V + 0.5 DD2 | V |
| Lead Solder Temperature | 260° C for 10 | sec., 1.6 mm below | seating plane |
数据来源:原厂规格书
安全与绝缘额定值(DIN EN/IEC 60747−5−5)
| 说明 | 符号 | 值 | 单位 |
|---|---|---|---|
| Installation classification per DIN VDE | 0110/1.89, Table 1 | ||
| for rated mains voltage ≤ 150 Vrms | I-IV | ||
| for rated mains voltage ≤ 300 Vrms | I-IV | ||
| for rated mains voltage ≤ 450 V rms | I-IV | ||
| for rated mains voltage ≤ 600 Vrms | I-IV | ||
| Pollution Degree (DIN VDE 0110/1.89) | 2 | ||
| Input to Output Test Voltage, Method b | V | 1671 | Vpeak |
| V x 1.875 = V , 100% Production Test | with t = 1 sec, | ||
| Partial Discharge < 5 pC | |||
| Input to Output Test Voltage, Method a | V | 1426 | Vpeak |
| V x 1.6 = V , Type and Sample Test, t | = 10 sec, | ||
| Partial Discharge < 5 pC | |||
| Highest Allowable Overvoltage (Transient | Overvoltage, t = 60 sec) V | 8000 | Vpeak |
| (External Clearance) | distance through | air | |
| (External Creepage) | distance path along | body | |
| Minimum Internal Plastic Gap | 0.5 mm Through insulation | distance, conductor | to conductor, |
| (Internal Clearance) | usually the direct | distance between | the photoemitter and |
| photodetector | inside the optocoupler | cavity | |
| Tracking Resistance CTI | >175 V DIN IEC 112/VDE | 0303 Part 1 | |
| Isolation Group | IIIa Material Group | (DIN VDE 0110, 1/89, | Table 1) |
电气特性 Electrical Characteristics(TA = 25°C)
| 参数 | 符号 | 最小 | Typ.[1] | 最大 | 单位 | 测试条件 | 图号 |
|---|---|---|---|---|---|---|---|
| A | DD1 | DD2 | IN | ||||
| V – = 0 V (single-ended | connection); | tested with | Sinc3 | filter, | 256 decimation | ratio. | |
| Resolution | 16 | Bits | Decimation filter output set | to 16 bits | |||
| Integral Nonlinearity | INL | -15 | 3 | 15 | LSB | T = -40° C to +85° C; see | Definitions |
| -25 | 3 | 25 | LSB | T = 85° C to 105° C | |||
| Differential Nonlinearity | DNL | -0.9 | 0.9 | LSB | No missing codes, guaranteed | by | |
| design; see Definitions section | |||||||
| Offset Error | V | -2 | 0.4 | 2 | mV | T = -40° C to +105° C; | 5 |
| see Definitions section | |||||||
| Offset Drift vs. Temperature | TCV OS | 2 | 6 | mV/°C | V = 5 V DD1 | ||
| Offset Drift vs. V | 220 | mV/V | |||||
| Internal Reference | Voltage V | 320 | mV | ||||
| Reference Voltage | Tolerance G E | -1 | 1 | % | T = 25° C, V + = -320 to A IN | +320 mV; | |
| see Definitions section | |||||||
| -2 | 2 | % | T = -40° C to +105° C, | 6 | |||
| V + = -320 to +320 mV | |||||||
| V Drift vs. Temperature | TCG | 60 | ppm/°C | ||||
| V Drift vs. V | -1.3 | mV/V | Note 4 | ||||
| Full-Scale Differential | Voltage FSR | 320 | mV | V = V + – V –; Note 2 | |||
| Average Input Bias | Current I | -0.3 | mA | V = 5V, V = 5V, V + = | 0 V; 7 | ||
| INA | DD1 DD2 IN | ||||||
| Average Input Resistance | R | 24 | kΩ | Across V + or V – to GND1; | Note 3 | ||
| Input Capacitance | C | 8 | pF | Across V + or V – to GND1 | |||
| DYNAMIC CHARACTERISTICS | V + = 400 mVpp, 1 kHz sine | wave | |||||
| Signal-to-Noise Ratio | SNR | 68 | 78 | dB | T = -40° C to +105° C; | 8 | |
| see Definitions section | |||||||
| Signal-to-(Noise + | Distortion) SNDR | 65 | 75 | dB | T = -40° C to +105° C; | 9 | |
| Ratio | see Definitions section | ||||||
| Effective Number of | Bits ENOB | 12 | Bits | see Definitions section | |||
| Isolation Transient | Immunity CMR | 25 | kV/ms | V = 1 kV; See Definitions | section | ||
| Common-Mode Rejection | Ratio CMRR | 74 | dB | ||||
| Output High Voltage | V | V – | V – | V | I = -200 mA | ||
| OH | DD2 | DD2 | OUT | ||||
| Output Low Voltage | V | 0.6 | V | I = +1.6 mA | |||
| V Supply Current | I | 9 | 14 | mA | V + = –320 mV to +320 mV | 10 | |
| DD1 | DD1 | IN | |||||
| V Supply Current | I | 5.2 | 8 | mA | V = 5 V supply | 11 | |
| DD2 | DD2 | DD2 | |||||
| 4.6 | 7 | mA | V = 3.3 V supply DD2 | 12 | |||
| 4. V Drift vs. V can | be expressed as –0.4%/V | with | reference to V | . | |||
| Unless otherwise noted, | T = -40° C to +105° C, V | = 4.5 | V to 5.5 | V, V | = 3 V | to 5.5 V. | |
| Modulator Clock Output | Frequency f | 9 | 10 | 11 | MHz | Clock duty cycle 40% to | 60% 13 |
| Data Access Time After MCLK | Rising Edge t | 40 | ns | C = 15 pF | 4 | ||
| Data Hold Time After MCLK | Rising Edge t | 10 | ns | C = 15 pF | 4 | ||
| Input-Output Momentary | Withstand V | 5000 | Vrms | RH < 50%, t = 1 min; T | = 25° C 1, 2 | ||
| Input-Output Resistance | R I-O | 1012 | 1013 | Ω | V I-O = 500 V DC | 3 | |
| 1011 | Ω | T A = 100° C | 3 | ||||
| Input-Output Capacitance | C | 1.4 | pF | f = 1 MHz | 3 |
特性曲线(Typical Performance Curves)

