产品应用与封装尺寸


图纸取自原厂规格书,点击可放大查看原始尺寸标注。
引脚定义与内部结构
| 引脚 | 符号 | 名称 |
|---|---|---|
| 5 | V | |
| 6 | V | |
| 7 | V | |
| 8 | V |
数据来源:原厂规格书引脚图
关键参数速览
- 正向电压 VF
- Figure 24
- 电源电压 VCC
- 35
- 工作温度 TA
- 105
产品特点 Features
- 2.5A maximum peak output current
- 2.0A minimum peak output current
- Built-in active Miller clamp
- Rail-to-rail output voltage
- Fast propagation delay to minimize dead time stage capable of driving IGBTs of up to 150A and 1200V. It illustrates a typical gate drive implementation using the voltage, anti-cross conduction and LED input current
- ACPL-H342. The following describes about driving IGBT.
- hysteresis.
- However, it is also applicable to MOSFET. Designers need to adjust the V supply voltage, depending on the
- The active Miller clamp function eliminates the need of CC
- MOSFET or IGBT gate threshold requirements negative gate drive in most application and allows the use
- (recommended V = 18V for IGBT and 12V for MOSFET).
- of simple bootstrap supply for high side driver. Rail-to-rail CC output voltage ensures that the IGBT gate voltage is driven
- The supply bypass capacitors (1 µF) provide the large to the optimum intended level with no power loss across transient currents necessary during a switching transition.
- CMR response by providing a balanced resistance network across the LED.
- Broadcom AV02-2526EN
- Q1 ON t Q1 OFF
绝对最大额定值 Absolute Maximum Ratings(TA = 25°C)
超过下表数值可能造成器件永久损坏,设计时请留余量。
| 参数 | 符号 | 最小 | 最大 | 单位 | 备注 |
|---|---|---|---|---|---|
| Storage Temperature | T | –55 | 125 | °C | — |
| Operating Temperature | T | –40 | 105 | °C | — |
| Output IC Junction Temperature | T | — | 125 | °C | — |
| Average Input Current | I | — | 25 | mA | a |
| Peak Transient Input Current (<1 ms | pulse width, 300 pps) I | — | 1 | A | — |
| “High” Peak Output Current | I | — | 2.5 | A | b |
| “Low” Peak Output Current | I | — | 2.5 | A | b |
| Peak Clamp Sink Current | I | — | 2.5 | A | b |
| Total Output Supply Voltage | (V – V ) | 0 | 35 | V | — |
| Output Voltage | V | –0.5 | V | V | — |
| Output IC Power Dissipation | P | — | 500 | mW | c |
| Total Power Dissipation | P | — | 550 | mW | d |
| Lead Solder Temperature | 260°C for | 10s, 1.6 mm below | seating plane |
数据来源:原厂规格书
安全与绝缘额定值(DIN EN/IEC 60747−5−5)
| 说明 | 符号 | 包装 | 060 | 包装2 | 0602 | 单位 |
|---|---|---|---|---|---|---|
| ACPL-H342 | ACPL-K342 | |||||
| Installation classification per DIN VDE 0110/39, | Table 1f — | — | ||||
| or rated mains voltage ≤ 150 V | I – IV | I – IV | ||||
| for rated mains voltage ≤ 300 V | I – IV | I – IV | ||||
| Climatic Classification | — | 40/105/21 | 40/105/21 | — | ||
| Pollution Degree (DIN VDE 0110/39) | — | 2 | 2 | — | ||
| Input to Output Test Voltage, Method ba | V PR | 1671 | 2137 | Vpeak | ||
| Input to Output Test Voltage, Method aa | V PR | 1426 | 1824 | Vpeak | ||
| Highest Allowable Overvoltagea (Transient | Overvoltage t ini = 60s) V IOTM | 6000 | 8000 | Vpeak | ||
| Case Temperature | T | 175 | 175 | °C | ||
| Input Current | I | 230 | 230 | mA | ||
| Output Power | 600 | 600 | mW | |||
| Insulation Resistance at T , V = 500V | R | >109 | >109 | | ||
| Broadcom | AV02-2526EN |
电气特性 Electrical Characteristics(TA = 25°C)
| 参数 | 符号 | 最小 | 典型 | 最大 | 单位 | 测试条件 | Figure | 备注 |
|---|---|---|---|---|---|---|---|---|
| A | CC | EE | EE | |||||
| A | F(ON) | F(OFF) | ||||||
| High Level Peak Output | Current I OH | –0.5 | –1.2 | — | A | V = V – 4V O CC | Figure 5, Figure 6, | a |
| –2.0 | — | — | A | V = V – 15V | b | |||
| O CC | Figure 25 | |||||||
| Low Level Peak Output | Current I OL | 0.5 | 2.7 | — | A | V = V + 2.5V O EE | Figure 8, Figure 9, | a |
| 2.0 | — | — | A | V = V + 15V | b | |||
| O EE | Figure 26 | |||||||
| High Output Transistor | RDS(ON) R | — | 2.6 | 5.0 | | I = –2.0A | Figure 10 | — |
| Low Output Transistor | RDS(ON) R | — | 0.8 | 2.0 | | I = 2.0A | Figure 11 | — |
| Clamp Output Peak | Current I CLAMP | 1.0 | 2.5 | — | A | V = V + 2.5V O EE | Figure 16, Figure 18, Figure 29 | b |
| Clamp Pin Threshold | V | — | 2.3 | — | V | — | Figure 17,Fi gure 18, Figure 30 | — |
| Clamp Output Transistor | RDS(ON) R | — | 0.8 | 2.0 | | I = 1.5A | — | — |
| High Level Output Voltage | V | V – | 2.0 — | — | V | I = –100 mA | Figure 4, | c, d |
| OH | CC | O | Figure 6, Figure 27 | |||||
| High Level Output Voltage | V | — | V | — | V | I = 0 mA, | Figure 3 | — |
| OH | CC | O I = 10 mA | ||||||
| Low Level Output Voltage | V | — | 0.07 | 0.25 | V | I = 100 mA | Figure 7, Figure 9, Figure 28 | — |
| High Level Supply Current | I | — | 1.68 | 2.5 | mA | Rg = 10, | Figure 12, | — |
| Cg = 25 nF, I = 10 mA, | Figure 13 | |||||||
| Low Level Supply Current | I | — | 2.0 | 2.5 | mA | Rg = 10, Cg = 25 nF, I = 0 mA | — | |
| Threshold Input Current | Low to High I | 0.5 | 1.5 | 4.0 | mA | Rg = 10, | Figure 14, | — |
| Cg = 25 nF, | Figure 15, | |||||||
| V > 5V | Figure 31 | |||||||
| Threshold Input Voltage | High to Low V | 0.8 | — | — | V | — | — | |
| Input Forward Voltage | V | 1.2 | 1.55 | 1.95 | V | I = 10 mA | Figure 24 | — |
| Temperature Coefficient | of Input V /T | — | –1.7 | — | mV/°C | — | — | |
| Input Capacitance | C | — | 70 | — | pF | f = 1 MHz, V = | 0V — | — |
| Broadcom | AV02-2526EN | |||||||
| 2.5A | Output Current | IGBT Gate Drive | Optocoupler with Active | Miller Clamp, | ||||
| UVLO Threshold | V UVLO+ | 11.0 | 12.3 | 13.5 | V | V > 5V, I = 10 O F | mA Figure 32 | — |
| V | 9.5 | 10.7 | 12.0 | — | ||||
| UVLO Hysteresis | UVLO | — | 1.4 | — | — | |||
| OH | OH | CC OH |
订货信息与供货形式
| 型号 | 型号2 | Compliant) |
|---|---|---|
| Table | 2: Part | Ordering |
| Part | Number | Compliant) |
| Example | 1: | ACPL-H342-560E to |
| Example | 2: | ACPL-K342-000E to |
| ISO | RMS | ISO |
