产品应用与封装尺寸
图纸取自原厂规格书，点击可放大查看原始尺寸标注。
引脚定义与内部结构
| 引脚 | 符号 | 名称 |
|---|---|---|
| 4 | EMITTER | |
| 5 | COLLECTOR | |
| 6 | NC | |
| 7 | V |
数据来源：原厂规格书引脚图
关键参数速览
- 电流传输比 CTR
- 125
- 正向电流 IF
- MOC8106M
- 集电极-发射极电压 VCEO
- MOC8106M
- 工作温度 TA
- °C MOC8106M
产品特点 Features
- High BV : 70 V Minimum (CNY17XM, CNY17FXM, The CNY17XM, CNY17FXM, and MOC8106M devices
- MOC8106M) consist of a gallium arsenide infrared emitting diode
- Closely Matched Current Transfer Ratio (CTR) coupled with an NPN phototransistor in a dual in-line
- 6-Pin
- Minimizes Unit-to-Unit Variation package.
- CNY17XM,
绝对最大额定值 Absolute Maximum Ratings（TA = 25°C）
超过下表数值可能造成器件永久损坏，设计时请留余量。
| 符号 | 参数 | 值 | 单位 |
|---|---|---|---|
| CNY17FXM, | |||
| T Storage | Temperature | -40 to +125 | °C |
| T A Ambient | Operating Temperature | -40 to +100 | °C MOC8106M |
| T Junction | Temperature | -40 to +125 | ºC |
| T Lead Solder | Temperature | 260 for 10 seconds | °C |
| Total Device | Power Dissipation @ 25°C (LED plus detector) | 270 | mW |
| Derate Linearly | From 25°C | 2.94 | mW/°C 6-Pin |
| I Continuous | Forward Current | 60 | mA |
| I (pk) Forward Current | – Peak (1 µs pulse, 300 pps) | 1.5 | A DIP |
| LED Power | Dissipation 25°C Ambient | 120 | mW |
| Derate Linearly | From 25°C | 1.41 | mW/°C |
| I Continuous | Collector Current | 50 | mA |
| V Collector-Emitter | Voltage | 70 | V |
| V ECO Emitter Collector | Voltage | 7 | V Phototransistor |
| Detector Power | Dissipation @ 25°C | 150 | mW |
| Derate Linearly | from 25°C | 1.76 | mW/°C |
数据来源：原厂规格书
安全与绝缘额定值（DIN EN/IEC 60747−5−5）
| 符号 | 参数 | 值 | 单位 |
|---|---|---|---|
| CNY17XM, | |||
| Installation Classifications | per DIN VDE < 150 V RMS | I–IV | |
| 0110/1.89 Table 1, For Rated | Mains Voltage < 300 V | I–IV | |
| Pollution Degree (DIN VDE | 0110/1.89) | 2 | MOC8106M |
| Comparative Tracking Index | 175 | ||
| Input-to-Output | Test Voltage, Method A, V x 1.6 = V | , | |
| IORM PR | 1360 | V | |
| Type and Sample | Test with t = 10 s, Partial Discharge < | 5 pC | peak — |
| Input-to-Output | Test Voltage, Method B, V x 1.875 = | V , | 6-Pin |
| IORM | PR 1594 | V | |
| 100% Production | Test with t = 1 s, Partial Discharge < 5 | pC | peak |
| V Highest Allowable | Over-Voltage | 6000 | V |
| External | Creepage | ≥ 7 | mm High |
| External | Clearance | ≥ 7 | mm |
| External | Clearance (for Option TV, 0.4" Lead Spacing) | ≥ 10 | mm BV |
| T Case Temperature(1) | 175 | °C | |
| I Input Current(1) | 350 | mA | |
| P Output Power(1) | 800 | mW | |
| R Insulation | Resistance at T , V = 500 V(1) | > 109 | Ω CNY17XM, |
电气特性 Electrical Characteristics（TA = 25°C）
| 符号 | 参数 | 测试条件 | 器件 | 最小 | 典型 | 最大 | 单位 |
|---|---|---|---|---|---|---|---|
| CNY17FXM, | |||||||
| I = 10 mA | All Devices | 1.0 | 1.15 | 1.50 | V | ||
| I = 60 mA | 1.0 | 1.35 | 1.65 | V MOC8106M | |||
| C | Capacitance | V = 0 V, f = 1.0 MHz | All Devices | 18 | pF | ||
| I | V = 6 V | All Devices | 0.001 | 10 | µA | ||
| BV | Collector-to-Emitter | I = 1 mA, I = 0 | All Devices | 70 | 100 | V | |
| BV | Collector-to-Base | I = 10 µA, I = 0 | CNY17XM | 70 | 120 | V 6-Pin | |
| BV | Emitter-to-Collector | I = 100 µA, I = 0 | All Devices | 7 | 10 | V | |
| I | Collector-to-Emitter | V = 10 V, I = 0 | All Devices | 1 | 50 | nA | |
| I | Collector-to-Base | V = 10 V, I = 0 | CNY17XM | 20 | nA | ||
| C | Collector-to-Emitter | V = 0, f = 1 MHz | All Devices | 8 | pF BV | ||
| C | Collector-to-Base | V = 0, f = 1 MHz | CNY17XM | 20 | pF CEO | ||
| C | Emitter-to-Base | V = 0, f = 1 MHz | CNY17XM | 10 | pF | ||
| I | = 10 mA, V = 10 V | MOC8106M | 50 | 150 | % | ||
| I | = 10 mA, V = 5 V | CNY171M, | CNY17F1M 40 | 80 | % | ||
| Current Transfer | Optocouplers | ||||||
| CTR | I | = 10 mA, V = 5 V | CNY172M, | CNY17F2M 63 | 125 | % | |
| I | = 10 mA, V = 5 V | CNY173M, | CNY17F3M 100 | 200 | % | ||
| I | = 10 mA, V = 5 V | CNY174M, | CNY17F4M 160 | 320 | % | ||
| Collector-Emitter I C | = 0.5 mA, I F = 5 mA | MOC8106M | |||||
| V | 0.4 | V | |||||
| CE(SAT) | Saturation Voltage I | = 2.5 mA, I = 10 mA | CNY17XM/CNY17FXM | CNY17XM, CNY17FXM, | |||
| t | Turn-On Time I | = 2.0 mA, V = 10 V, R = 100 Ω | All Devices | 2.0 | 10.0 | µs | |
| on | C | CC L | |||||
| t | Turn-Off Time I | = 2.0 mA, V = 10 V, R = 100 Ω | All Devices | 3.0 | 10.0 | µs | |
| off | C | CC L | |||||
| t | Delay Time I | = 10 mA, V = 5 V, R = 75 Ω | CNY17XM/CNY17FXM | 5.6 | µs | ||
| d | F | CC L | MOC8106M | ||||
| t | Rise Time I | = 10 mA, V = 5 V, R = 75 Ω | CNY17XM/CNY17FXM | 4.0 | µs | ||
| r | F | CC L | |||||
| t | Storage Time I | = 10 mA, V = 5 V, R = 75 Ω | CNY17XM/CNY17FXM | 4.1 | µs | ||
| s | F | CC L | |||||
| t | Fall Time I | = 10 mA, V = 5 V, R = 75 Ω | CNY17XM/CNY17FXM | 3.5 | µs | ||
| f | F | CC L |
特性曲线（Typical Performance Curves）
相关 / 可替代型号
以上型号来自规格书与型号命名比对，参数需以各自规格书为准；下单前请与销售确认封装与脚位。