产品应用与封装尺寸
图纸取自原厂规格书，点击可放大查看原始尺寸标注。
引脚定义与内部结构
| 引脚 | 符号 | 名称 |
|---|---|---|
| 4 | E | |
| 5 | C | |
| 6 | NC | |
| 7 | F |
数据来源：原厂规格书引脚图
关键参数速览
- 正向电压 VF
- 1.65
- 正向电流 IF
- 60
产品特点 Features
- Isolation test voltage, 5000 V
- No base terminal connection for improved
- A 1 6 NC common mode interface immunity
- Long term stability
- C 2 5 C
- Industry standard dual-in-line package
- NC 3 4 E • Material categorization: For definitions of
- AGENCY APPROVALS
- CNY17F
绝对最大额定值 Absolute Maximum Ratings（TA = 25°C）
超过下表数值可能造成器件永久损坏，设计时请留余量。
| 参数 | 测试条件 | 符号 | 值 | 单位 |
|---|---|---|---|---|
| DC forward current | I | 60 | mA | |
| Surge forward current | t ≤ 10 μs | I | 2.5 | A |
| Power dissipation | P | 100 | mW | |
| Collector emitter breakdown voltage | BV | 70 | V | |
| Collector current | I | 50 | mA | |
| Collector peak current | t /T = 0.5, t ≤ 10 ms p p | I CM | 100 | mA |
| Output power dissipation | P | 150 | mW | |
| t = 1 min | V | 5000 | V | |
| detector | ISO | RMS | ||
| Storage temperature range | T | -55 to +150 | °C | |
| Ambient temperature range | T | -55 to +110 | °C | |
| Junction temperature | T | 100 | °C | |
| Soldering temperature (1) | 2 mm from case, ≤ 10 s | T | 260 | °C |
| Total power dissipation | P | 250 | mW | |
| Coupled device | ||||
| 0 20 40 60 80 | 100 120 | |||
| T - Ambient Temperature | (°C) | |||
| Fig. 1 - Total Power Dissipation vs. Ambient | Temperature |
数据来源：原厂规格书
安全与绝缘额定值（DIN EN/IEC 60747−5−5）
| 参数 | 符号 | 值 | 单位 |
|---|---|---|---|
| Insulation resistance T | = 25 °C, V = 500 V R | ≥ 1012 | Ω |
| Isolation resistance T | = 100 °C, V = 500 V R | ≥ 1011 | Ω |
| Environment (pollution degree in accordance | to DIN VDE 0109) | 2 | |
| Standard DIP-4 | ≥ 7 | mm | |
| SMD | ≥ 7 | mm | |
| Standard DIP-4 | ≥ 8 | mm | |
| SMD | ≥ 8 | mm | |
| with the safety ratings shall be ensured by | means of protective circuits. |
电气特性 Electrical Characteristics（TA = 25°C）
| 参数 | 测试条件 | 型号 | 符号 | 最小 | 典型 | 最大 | 单位 |
|---|---|---|---|---|---|---|---|
| Forward voltage | I = 60 mA | V | 1.39 | 1.65 | V | ||
| Breakdown voltage | I = 10 μA | V | 6 | V | |||
| Capacitance | V = 0 V, f = 1 MHz | C | 25 | pF | |||
| Collector emitter capacitance | V = 5 V, f = 1 MHz | C | 5.2 | pF | |||
| Base collector capacitance | V = 5 V, f = 1 MHz | C | 6.5 | pF | |||
| Emitter base capacitance | V = 5 V, f = 1 MHz | C | 7.5 | pF CNY17F | |||
| Collector emitter, saturation | voltage I = 10 mA, I = 2.5 mA | V | 0.25 | 0.4 | V | ||
| Coupling capacitance | C | 0.6 | pF | ||||
| CNY17F-1 | I | 2 | 50 | nA | |||
| CNY17F-2 | I | 2 | 50 | nA | |||
| CNY17F-3 | I | 5 | 100 | nA | |||
| CNY17F-4 | I | 5 | 100 | nA |
特性曲线（Typical Performance Curves）
