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EL817(A)-F 4-pin DIP

The EL817 Series of devices each consist of an infrared emitting diodes, optically coupled to a phototransistor detector. They are packaged in a 4-pin DIP package and available in wide-lead spacing an
4-pin DIP正向电压 VF 1.4电流传输比 CTR 400正向电流 IF 1.4集电极-发射极电压 VCEO 35隔离电压 VISO 5×1010

产品实拍图

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关键参数速览

正向电压 VF
1.4
电流传输比 CTR
400
正向电流 IF
1.4
集电极-发射极电压 VCEO
35
隔离电压 VISO
5×1010

产品特点 Features

  • Compliance Halogens Free (Only copper leadframe)
  • (Br < 900 ppm, Cl < 900 ppm, Br+Cl < 1500 ppm)
  • Current transfer ratio
  • (CTR: 50~600% at IF = 5mA, VCE = 5V)
  •  High isolation voltage between input
  • and output (Viso = 5000Vrms)
  •  Creepage distance > 7.62mm
  •  Operating temperature up to +110°C
  •  Compact small outline package
  •  Pb free
  • The product itself will remain within RoHS compliant version
  •  Compliance with EU REACH

绝对最大额定值 Absolute Maximum Ratings(TA = 25°C)

超过下表数值可能造成器件永久损坏,设计时请留余量。

参数符号额定值单位
Forward currentI60mA
Peak forward current (1us,pulse) I1 100A mW
Derating factor (above T =100°C)2.9 150mW/°C mW
Derating factor (above T =100°C)
a5.8mW/°C
Output Collector currentI50mA
Collector-Emitter voltageV35V
Emitter-Collector voltageV6V
Total Power DissipationP200mW
数据来源:原厂规格书

安全与绝缘额定值(DIN EN/IEC 60747−5−5)

参数符号额定值单位
4PIN DIP PHOTOTRANSISTOR EL817 SeriesPHOTOCOUPLER
Operating TemperatureT-55 to 110°C
Storage TemperatureT-55 to 125°C
Soldering Temperature*2T260°C
Ver.:20 ReleaseDate:01/23/2025狀態:Approved(正式發行)

电气特性 Electrical Characteristics(TA = 25°C)

参数符号最小典型最大单位条件
Forward VoltageV F-1.21.4VI F = 20mA
Input capacitanceC-30250pFV = 0, f = 1kHz
I--100nAV = 20V, I = 0mA
BV35--VI = 0.1mA
BV6--VI = 0.1mA
EL81750-600
EL817A80-160
EL817B130-260
Transfer EL817CCTR200-400%I F = 5mA ,V CE = 5V
EL817D300-600
EL817X100-200
EL817Y150-300
V-0.10.2V I= 20mA ,I = 1mA
saturation voltageCE(sat)F C V = 500Vdc,
Isolation resistanceR5×1010--ΩIO 40~60% R.H.
Floating capacitanceC-0.61.0pFV = 0, f = 1MHz
V = 5V, I = 2mA
Cut-off frequencyfc-80-kHz
R = 100Ω, -3dB
Rise timet--18µs
rV = 2V, I = 2mA, R = 100Ω
Fall timet--18µsL
Ver.:20 ReleaseDate:01/23/2025狀態:Approved(正式發行)

相关 / 可替代型号

以上型号来自规格书与型号命名比对,参数需以各自规格书为准;下单前请与销售确认封装与脚位。

订货信息与供货形式

包装M型号
EL817Series
PackageDimension (Dimensions in mm)
StandardDIP Type
Option EL817M SeriesType
OptionS1Type
OptionS2Type

应用领域 Applications

Programmable controllersTelecommunication equipmentsDATASHEET4PIN DIP PHOTOTRANSISTOR PHOTOCOUPLEREL817 Series

资料下载

规格书为原厂公开资料,点击在新窗口打开下载。

获取报价 / 申请样品

常备现货、免费送样、支持小批量试产。报出用量与封装要求,当天给报价与交期。

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