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EL817S1(D)(TA)-F 4-pin DIP

The EL817-G series of devices each consist of an infrared emitting diodes, optically coupled to a phototransistor detector. They are packaged in a 4-pin DIP package and available in wide-lead spacing
4-pin DIP正向电压 VF 1.4电流传输比 CTR 400正向电流 IF 400集电极-发射极电压 VCEO 80隔离电压 VISO 5×1010

产品实拍图

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产品应用与封装尺寸

图纸取自原厂规格书,点击可放大查看原始尺寸标注。

关键参数速览

正向电压 VF
1.4
电流传输比 CTR
400
正向电流 IF
400
集电极-发射极电压 VCEO
80
隔离电压 VISO
5×1010

产品特点 Features

  • .• Compliance Halogens Free
  • (Br < 900 ppm, Cl < 900 ppm, Br+Cl < 1500 ppm)
  • Current transfer ratio
  • (CTR: 50~600% at IF = 5mA, VCE = 5V)
  • High isolation voltage between input
  • and output (Viso = 5000Vrms )
  • Creepage distance > 7.62mm
  • Operating temperature up to +110°C
  • Compact small outline package
  • Compliance with EU REACH.
  • The product itself will remain within RoHS compliant version
  • UL and cUL approved(No.E214129)

绝对最大额定值 Absolute Maximum Ratings(TA = 25°C)

超过下表数值可能造成器件永久损坏,设计时请留余量。

参数符号额定值单位
Forward currentI60mA
Peak forward current (1us,pulse) I1 100A mW
Derating factor (above T =100°C)2.9 150mW/°C mW
Derating factor (above T =100°C)
a5.8mW/°C
Output Collector currentI50mA
Collector-Emitter voltageV80V
Emitter-Collector voltageV7V
Total Power DissipationP200mW
数据来源:原厂规格书

安全与绝缘额定值(DIN EN/IEC 60747−5−5)

参数符号额定值单位
4PIN DIP PHOTOTRANSISTORPHOTOCOUPLER
EL817-G Series
Operating TemperatureT-55 to 110°C
Storage TemperatureT-55 to 125°C
Soldering Temperature* 2T260°C

电气特性 Electrical Characteristics(TA = 25°C)

参数符号最小典型最大单位条件
Forward VoltageV-1.21.4VI = 20mA
Input capacitanceC-30250pFV = 0, f = 1kHz
I--100nAV = 20V, I = 0mA
BV80--VI = 0.1mA
BV7--VI = 0.1mA
EL81750-600
EL817A80-160
EL817B130-260
Transfer EL817CCTR200-400%I F = 5mA ,V CE = 5V
EL817D300-600
EL817X100-200
EL817Y150-300
V-0.10.2V I= 20mA ,I = 1mA
saturation voltageCE(sat)F C V = 500Vdc,
Isolation resistanceR5×1010--IO
IO40~60% R.H.
Floating capacitanceC-0.61.0pFV = 0, f = 1MHz
V = 5V, I = 2mA
Cut-off frequencyfc-80-kHzCE C
R = 100, -3dB
Rise timet-618µs
rV = 2V, I = 2mA, R = 100
Fall timet-818µsL

相关 / 可替代型号

以上型号来自规格书与型号命名比对,参数需以各自规格书为准;下单前请与销售确认封装与脚位。

订货信息与供货形式

包装M型号
EL817-GSeries
PackageDimension (Dimensions in mm)
StandardDIP Type
OptionMType
EL817-GSeries
OptionS1Type
OptionS2Type

应用领域 Applications

Programmable controllersTelecommunication equipmentsDATASHEET4PIN DIP PHOTOTRANSISTOR PHOTOCOUPLEREL817-G Series

资料下载

规格书为原厂公开资料,点击在新窗口打开下载。

获取报价 / 申请样品

常备现货、免费送样、支持小批量试产。报出用量与封装要求,当天给报价与交期。

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型号:EL817S1(D)(TA)-F 请报型号与数量
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