产品实拍图
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产品应用与封装尺寸
典型应用电路（原厂规格书应用章节） 图纸取自原厂规格书，点击可放大查看原始尺寸标注。
引脚定义与内部结构
内部结构 / 引脚图（原厂规格书引脚章节）
引脚 符号 名称 3 A 4 NC 5 V 6 V 7 V 8 V
数据来源：原厂规格书引脚图
关键参数速览
正向电压 VF 1.8 电源电压 VCC 0 to 35 工作温度 TA −1.8
产品特点 Features
High Noise Immunity characterized by 20 kV/ s Mode Rejection Use of P−channel MOSFETs at Output Stage Enables Swing close to the Supply Rail Wide Supply Voltage Range from 15 V to 30 V Common NC 1 8 V Voltage ANODE 2 7 V FOD3150A
绝对最大额定值 Absolute Maximum Ratings（TA = 25°C）
超过下表数值可能造成器件永久损坏，设计时请留余量。
符号 参数 值 单位 T Storage Temperature −55 to +125 °C T Operating Temperature −40 to +100 °C T Junction Temperature −40 to +125 °C T Lead Wave Solder Temperature 260 for 10 sec °C I Average Input Current 25 mA I Peak Output Current (1) 3 A V – V Supply Voltage 0 to 35 V V Peak Output Voltage 0 to V V PD Input Power Dissipation (2) (4) 45 mW PD Output Power Dissipation (3) (4) 250 mW
数据来源：原厂规格书
安全与绝缘额定值（DIN EN/IEC 60747−5−5）
符号 参数 最小 典型 最大 单位 Compliance with the safety ratings shall be ensured by means of protective circuits. For Rated Main Voltage < 150 Vrms I–IV For Rated Main Voltage < 300 Vrms I–IV For Rated Main Voltage < 450 Vrms I–III For Rated Main Voltage < 600 Vrms I–III Pollution Degree (DIN VDE 0110/1.89) 2 CTI Comparative Tracking Index 175 V Input to Output Test Voltage, Method b, 1669 V x 1.875 = V , 100% Production Test with tm = 1 second, Partial Input to Output Test Voltage, Method a, 1335 V x 1.5 = V , Type and Sample Test with tm = 60 second, Partial V Highest Allowable Over Voltage 6000 Vpeak External Clearance 7.4 mm External Clearance (for Option T−0.4” Lead Spacing) 10.16 mm T Case Safety Limit Values – Maximum Values Allowed in the Event of a Failure °C Case Temperature 150 I Input Current 25 mA P Output Power (Duty Factor ≤ 2.7 %) 250 109 mW µ
电气特性 Electrical Characteristics（TA = 25°C）
符号 参数 条件 最小 典型 最大 单位 V Input Forward Voltage I = 10 mA 1.2 1.5 1.8 V (V F / T A ) −1.8 mV/°C CIN Input Capacitance f = 1 MHz, V = 0 V 60 pF IOH High Level Output Current (7) V = V – 3 V −1.0 −2.0 A V = V – 6 V −2.0 IOL Low Level Output Current (7) V = V + 3 V 1.0 2.0 A V = V + 6 V 2.0 VOH High Level Output Voltage I = 10 mA, I = −2.5 A V – 6.25 V V – 2.5 V V F O DD DD I = 10 mA, I = −100 mA V – 0.25 V V – 0.1 V F O DD DD VOL Low Level Output Voltage I = 0 mA, I = 2.5 A V + 2.5 V V + 6.25 V V F O SS SS I = 0 mA, I = 100 mA V + 0.1 V V + 0.25 V F O SS SS IDDH High Level Supply Current V = Open, I = 7 to 16 mA 2.8 5 mA IDDL Low Level Supply Current V = Open, V = 0 to 0.8 V 2.8 5 mA IFLH I = 0 mA, V > 5 V 2.3 5.0 mA VFHL I = 0 mA, V < 5 V 0.8 V VUVLO+ I = 1 0mA, V > 5 V 11 12.7 14 V VUVLO– I = 10 mA, V < 5 V 9.7 11.2 12.7 V UVLO 1.5 V
订货信息与供货形式
See detailed ordering and 包装 information in the 封装 See detailed ordering and shipping information in the package
应用领域 Applications
system. packaging 1 high PDIP8 GW PDIP8 9.655x6.6, 2.54P FUNCTIONAL BLOCK DIAGRAM Industrial Inverter Uninterruptible Power Supply Induction Heating Isolated IGBT/Power MOSFET Gate Drive FOD3150A
资料下载
规格书为原厂公开资料，点击在新窗口打开下载。
获取报价 / 申请样品
常备现货、免费送样、支持小批量试产。报出用量与封装要求，当天给报价与交期。
