Name: ONSEMI FOD817
Brand: ONSEMI
Availability: InStock

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产品应用与封装尺寸

图纸取自原厂规格书，点击可放大查看原始尺寸标注。

关键参数速览

正向电流 IF: 70
集电极-发射极电压 VCEO: 70
工作温度 TA: +105 -55 to +110 °C

产品特点 Features

AC Input Response (FOD814) The FOD814 consists of two gallium arsenide infrared —
Current Transfer Ratio in Selected Groups: emitting diodes, connected in inverse parallel, driving a 4-Pin silicon phototransistor output in a 4-pin dual in-line
FOD814: 20–300% FOD817: 50–600% package. The FOD817 Series consists of a gallium
FOD814A: 50–150% FOD817A: 80–160% arsenide infrared emitting diode driving a silicon
FOD817B: 130–260% phototransistor in a 4-pin dual in-line package.
FOD817C: 200–400%
Phototransistor
FOD817D: 300–600%
Minimum BV of 70 V Guaranteed
Temperature Min. (Tsmin) 150°C Optocouplers
Temperature Max. (Tsmax) 200°C
Time (t ) from (Tsmin to Tsmax) 60–120 seconds
Ramp-up Rate (t to t ) 3°C/second max.
Liquidous Temperature (T ) 217°C
Time (t ) Maintained Above (T ) 60–150 seconds
Peak Body Package Temperature 260°C +0°C / –5°C

绝对最大额定值 Absolute Maximum Ratings（TA = 25°C）

超过下表数值可能造成器件永久损坏，设计时请留余量。

符号	参数	单位
	FOD814	Value FOD817 FOD817
T Storage	Temperature	-55 to +150 °C Series
T Operating	Temperature -55 to	+105 -55 to +110 °C
T Junction	Temperature	-55 to +125 °C
T Lead	Solder Temperature	260 for 10 seconds °C 4-Pin
	Junction-to-Case Thermal Resistance	210 °C/W
P Total	Device Power Dissipation	200 mW
I Continuous	Forward Current ±50	50 mA
Power	Dissipation	70 mW
Derate	Above 100°C	1.7 mW/°C
V	Collector-Emitter Voltage	70 V
V	Emitter-Collector Voltage	6 V
I Continuous	Collector Current	50 mA
Collector	Power Dissipation	150 mW
Derate	Above 90°C	2.9 mW/°C

数据来源：原厂规格书

安全与绝缘额定值（DIN EN/IEC 60747−5−5）

符号	参数	值	单位	—
Installation Classifications	per DIN VDE < 150 V RMS	I–IV
0110/1.89 Table 1, For Rated	Mains Voltage < 300 V	I–III		FOD817
Pollution Degree (DIN VDE	0110/1.89)	2
Comparative Tracking Index		175		Series
Input-to-Output	Test Voltage, Method A, V x 1.6 = V	,		4-Pin
	IORM	PR 1360	V
Type and	Sample Test with t = 10 s, Partial Discharge <	5 pC	peak
Input-to-Output	Test Voltage, Method B, V x 1.875 =	V ,
	IORM	PR 1594	V	DIP
100% Production	Test with t = 1 s, Partial Discharge < 5	pC	peak
IORM			peak	Phototransistor
V Highest Allowable	Over-Voltage	8000	V
External	Creepage	 7	mm
External	Clearance	 7	mm
External	Clearance (for Option W, 0.4" Lead Spacing)	 10	mm
T Case Temperature(1)		175	°C
I Input Current(1)		400	mA
P Output Power(1)		700	mW
R Insulation	Resistance at T , V = 500 V(1)	> 1011	

电气特性 Electrical Characteristics（TA = 25°C）

符号	参数	器件	测试条件	最小	典型	最大	单位
Individual	Component Characteristics						Series, FOD817
		FOD814	I = ±20 mA		1.2	1.4
V Forward	Voltage						V
		FOD817	I = 20 mA		1.2	1.4
		FOD814	V = 0, f = 1 kHz		50	250	Series
C Terminal	Capacitance						pF
		FOD817	V = 0, f = 1 kHz		30	250
		FOD814	V = 20 V, I = 0			100
I Collector CEO	Dark Current						nA 4-Pin
		FOD817	V = 20 V, I = 0			100
	Collector-Emitter Breakdown	FOD814	I C = 0.1 mA, I F = 0	70
CEO Voltage		FOD817	I = 0.1 mA, I = 0	70			DIP
	Emitter-Collector Breakdown	FOD814	I E = 10 µA, I F = 0	6
ECO Voltage		FOD817	I = 10 µA, I = 0	6
		FOD814		20		300
		FOD814A		50		150	Optocouplers
		FOD817		50		600	FOD814
Isolation	Characteristics						Series,
	Input-Output Isolation	FOD814,	f = 60 Hz, t = 1 minute,
V ISO	Voltage(4)	FOD817	I I-O  2 µA	5000			VAC RMS FOD817
R Isolation	Resistance	FOD814,	V = 500 V	5x1010	1x1011		
		FOD814,					Series
C Isolation	Capacitance		V = 0, f = 1 MHz		0.6	1.0	pf 4-Pin

应用领域 Applications

OptocouplersFOD814 SeriesAC Line MonitorUnknown Polarity DC SensorTelephone Line InterfaceFOD817 SeriesPower Supply RegulatorsDigital Logic InputsMicroprocessor InputsFunctional Block DiagramFOD814 FOD817FOD814

资料下载

📄 FOD817 规格书 PDF

规格书为原厂公开资料，点击在新窗口打开下载。

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FOD817 4-Pin silicon