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FOD817B300 二极管、三极管等分立器件

The FOD814 consists of two gallium arsenide infrared emitting MARKING DIAGRAM diodes, connected in inverse parallel, driving a silicon phototransistor output in a 4−pin dual in−line package. The FOD81
正向电压 VF 1.2 1.4电流传输比 CTR − 300正向电流 IF 50

产品实拍图

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产品应用与封装尺寸

图纸取自原厂规格书,点击可放大查看原始尺寸标注。

关键参数速览

正向电压 VF
1.2 1.4
电流传输比 CTR
− 300
正向电流 IF
50

产品特点 Features

  • V = VDE Mark
  • AC Input Response (FOD814) X = One Digit Year Code
  • ZZ = Two Digit Work Week
  • Temperature Min. (Tsmin)
  • Temperature Max. (Tsmax)
  • Time (t ) from (Tsmin to Tsmax)
  • Ramp−up Rate (t to t )
  • Liquidous Temperature (T )
  • Time (t ) Maintained Above (T )
  • Peak Body Package Temperature
  • Time (t ) within 5°C of 260°C
  • Ramp−down Rate (T to T )
  • Time 25°C to Peak Temperature
  • 150°C
  • 200°C
  • 60−120 s

绝对最大额定值 Absolute Maximum Ratings(TA = 25°C)

超过下表数值可能造成器件永久损坏,设计时请留余量。

符号参数FOD814FOD817单位
I ContinuousForward Current±5050mA
P PowerDissipation70mW
Derate Above100°C1.7mW/°C
V Collector−EmitterVoltage70V
V Emitter−CollectorVoltage6
I ContinuousCollector Current50mA
P CollectorPower Dissipation150mW
Derate Above90°C2.9mW/°C
ELECTRICALCHARACTERISTICS T = 25°C unless otherwisespecified.
V ForwardVoltage FOD814I = ±20 mA −1.2 1.4V
FOD817I = 20 mA −1.2 1.4
C TerminalCapacitance FOD814V = 0, f = 1 kHz −50 250pF
FOD817−30 250
I CollectorDark Current FOD814V = 20 V, I = 0 −− 100nA
FOD817−− 100
BV Collector−EmitterBreakdown FOD814 I= 0.1 mA, I = 0 70− −V
FOD81770− −
BV Emitter−CollectorBreakdown FOD814I = 10 A, I = 0 6− −
FOD8176− −
CTR CurrentTransfer Ratio (Note 2) FOD814 I= ±1 mA, V = 5 V 20− 300%
FOD814A50− 150
FOD817 I= 5 mA, V = 5 V 50− 600
FOD817A80− 160
FOD817B130− 260
FOD817C200− 400
FOD817D300− 600
V Collector−EmitterSaturation FOD814 I= ±20 mA, I = 1 mA −0.1 0.2V
CE(SAT)FC
FOD817 I= 20 mA, I = 1 mA −0.1 0.2
数据来源:原厂规格书

安全与绝缘额定值(DIN EN/IEC 60747−5−5)

符号参数值单位
Installation Classifications perDIN VDE < 150 VI–IV
0110/1.89 Table 1, For RatedMains Voltage < 300 VI–III
Pollution Degree (DIN VDE0110/1.89)2
Comparative Tracking Index175
V Input−to−OutputTest Voltage, Method A, V x 1.6 = V ,1360V
PRIORM PRpeak
Type and SampleTest with t = 10 s, Partial Discharge < 5 pC
Input−to−OutputTest Voltage, Method B, V x 1.875 = V ,1594
100% ProductionTest with t = 1 s, Partial Discharge < 5 pC
V Highest AllowableOver−Voltage8000
External Creepage≥ 7mm
External Clearance≥ 7
External Clearance(for Option W, 0.4” Lead Spacing)≥ 10
T Case Temperature(Note 1)175°C
I Input Current(Note 1)400mA
P Output Power(Note 1)700mW
R InsulationResistance at T , V = 500 V (Note 1)> 1011kΩ
safety ratings shall be ensuredby means of protective circuits.
ABSOLUTE MAXIMUMRATINGS T = 25°C unless otherwise specified.
T Storage Temperature−55 to +150°C
T OperatingTemperature−55 to +105 −55 to +110
T JunctionTemperature−55 to +125
T Lead SolderTemperature260 for 10 s
µ Junction−to−CaseThermal Resistance210°C/W
P Total DevicePower Dissipation200mW

电气特性 Electrical Characteristics(TA = 25°C)

符号参数器件测试条件最小典型最大单位
f Cut−OffFrequencyFOD814V = 5 V, I = 2 mA,1580−kHz
tResponse Time (Rise)FOD814,−418s
tResponse Time (Fall)FOD814,L−318

特性曲线(Typical Performance Curves)

相关 / 可替代型号

以上型号来自规格书与型号命名比对,参数需以各自规格书为准;下单前请与销售确认封装与脚位。

应用领域 Applications

FOD814 Series♦ AC Line Monitor♦ Unknown Polarity DC Sensor♦ Telephone Line InterfaceFOD817 Series♦ Power Supply Regulators♦ Digital Logic Inputs♦ Microprocessor InputsFOD814, FOD817FUNCTIONAL BLOCK DIAGRAM

资料下载

规格书为原厂公开资料,点击在新窗口打开下载。

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