产品实拍图
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产品应用与封装尺寸
图纸取自原厂规格书，点击可放大查看原始尺寸标注。
关键参数速览
- 正向电压 VF
- 1.5
- 电流传输比 CTR
- 100
- 正向电流 IF
- 60
- 工作温度 TA
- -40 to +100
产品特点 Features
- Bi-polar emitter input The H11AAX-M series consists of two gallium-arsenide
- H11AA3-M, infrared emitting diodes connected in inverse parallel driving a single silicon phototransistor output.
- Underwriters Laboratory (UL) recognized File
- #E90700, Volume 2
- VDE approved File #102497 (ordering option ‘V’)
- H11AA1-M,
- Transfer Characteristics (T = 25°C Unless otherwise specified.)
- Symbol Characteristics Test Conditions Device Min. Typ.* Max. Units
- CE F CE
- Collector to Emitter H11AA2-M,
- H11AA3-M 50
- H11AA1-M 20
- H11AA2-M 10
- Symmetry (Figure 11)
- H11AA3-M,
- V Saturation Voltage, I = ±10mA, I = 0.5mA All .40 V
绝对最大额定值 Absolute Maximum Ratings（TA = 25°C）
超过下表数值可能造成器件永久损坏，设计时请留余量。
| 符号 | 参数 | 器件 | 值 | 单位 |
|---|---|---|---|---|
| H11AA2-M, | ||||
| T Storage | Temperature | All | -40 to +150 | °C |
| T Operating | Temperature | All | -40 to +100 | °C |
| T Lead | Solder Temperature | All | 260 for 10 sec | °C |
| P Total | Device Power Dissipation | 250 | mW | |
| Derate | Linearly From 25°C | 2.94 | mW/°C H11AA3-M, | |
| I Continuous | Forward Current | All | 60 | mA |
| I (pk) Forward | Current – Peak (1µs pulse, 300 | pps) All | ±1.0 | A |
| P LED | Power Dissipation | All | 120 | mW H11AA4-M |
| Derate | Linearly From 25°C | 1.41 | mW/°C | |
| I Continuous | Collector Current | All | 50 | mA |
| P Detector | Power Dissipation | 150 | mW | |
| Derate | linearity from 25°C | 1.76 | mW/°C AC |
数据来源：原厂规格书
安全与绝缘额定值（DIN EN/IEC 60747−5−5）
| 符号 | Characteristic | 测试条件 | 最小 | Typ.* | 最大 | 单位 |
|---|---|---|---|---|---|---|
| C | Package Capacitance | V = 0, f = 1MHz | 0.7 | pF | ||
| V | Isolation Voltage | f = 60 Hz, t = 1 sec. | 7500 | Vac(pk) AC | ||
| R | Isolation Resistance | V = 500 VDC | 1011 | Ω | ||
| ISO | I-O | Input/Phototransistor H11AA1-M, |
电气特性 Electrical Characteristics（TA = 25°C）
| 符号 | 参数 | 测试条件 | 器件 | 最小 | Typ.* | 最大 | 单位 |
|---|---|---|---|---|---|---|---|
| V Input | Forward Voltage | I = ±10mA | All | 1.17 | 1.5 | V | |
| C | Capacitance | V = 0 V, f = 1.0MHz | All | 80 | pF | ||
| BV | I = 1.0mA, I = 0 | All | 30 | 100 | V | ||
| CEO | Collector to Emitter | C F | |||||
| BV | Collector to Base | I = 100µA, I = 0 | All | 70 | 120 | V | |
| BV | Emitter to Base | I = 100µA, I = 0 | All | 5 | 10 | V | |
| BV | Emitter to Collector | I = 100µA, I = 0 | All | 7 | 10 | V | |
| I | Leakage Current | V = 10 V, I = 0 | H11AA1,3,4(-M) | 1 | 50 | nA | |
| H11AA2-M | 1 | 200 | |||||
| C | Capacitance Collector | V = 0, f = 1MHz | All | 10 | pF | ||
| C | Collector to Base | V = 0, f = 1MHz | All | 80 | pF | ||
| C | Emitter to Base | V = 0, f = 1MHz | All | 15 | pF H11AA1-M, | ||
| Transfer | Characteristics | (T = 25°C Unless otherwise | specified.) | ||||
| CTR | Current Transfer Ratio, | I = ±10mA, V = 10V | H11AA4-M | 100 | % | ||
| Collector to Emitter | H11AA3-M H11AA1-M H11AA2-M | 50 20 10 | H11AA2-M, | ||||
| Current Transfer Ratio, | I = ±10mA, V = 10V | All | .33 | 3.0 | H11AA3-M, | ||
| V | Saturation Voltage, | I = ±10mA, I = 0.5mA | All | .40 | V |
特性曲线（Typical Performance Curves）
