产品应用与封装尺寸
图纸取自原厂规格书，点击可放大查看原始尺寸标注。
引脚定义与内部结构
| 引脚 | 符号 | 名称 |
|---|---|---|
| 4 | EMITTER | |
| 5 | COLLECTOR | |
| 6 | BASE | |
| 7 | V | |
| 8 | I |
数据来源：原厂规格书引脚图
关键参数速览
- 正向电压 VF
- 1.50
- 电流传输比 CTR
- 2 (20)
产品特点 Features
- High Voltage:
- ♦ MOC8204M, BV = 400 V
- CEO H11D1
- ♦ H11D1M, BV CEO = 300 V VXYYQ
- ♦ H11D3M, BV = 200 V
- ON = Company Logo
- ♦ UL1577, 4,170 VAC for 1 Minute
- RMS H11D1 = Specific Device Code
- DIN−EN/IEC60747−5−5, 850 V Peak Working Insulation Voltage V = DIN EN/IEC60747−5−5 Option
- (only appears on component ordered with
- Temperature Min. (Tsmin)
- Temperature Max. (Tsmax)
- Time (t ) from (Tsmin to Tsmax)
- Ramp−up Rate (t to t )
- Liquidous Temperature (T )
- Time (t ) Maintained Above (T )
安全与绝缘额定值（DIN EN/IEC 60747−5−5）
| 符号 | 参数 | 值 | 单位 |
|---|---|---|---|
| Parameter | Characteristic | ||
| Installation Classifications per | DIN VDE < 150 V | I − IV | |
| 0110/1.89 Table 1, For Rated | Mains Voltage | ||
| < 300 V | I − IV | ||
| Pollution Degree (DIN VDE | 0110/1.89) | 2 | |
| Comparative Tracking Index | 175 | ||
| V Input−to−Output | Test Voltage, Method A, V x 1.6 = V , Type and | Sample Test 1360 | V |
| PR | IORM PR | peak | |
| with t = 10 s, | Partial Discharge < 5 pC | ||
| Input−to−Output | Test Voltage, Method B, V x 1.875 = V , 100% | Production Test 1594 | V |
| with t = 1 s, Partial | Discharge < 5 pC | ||
| V Highest Allowable | Over−Voltage | 6000 | V |
| External Creepage | ≥ 7 | mm | |
| External Clearance | ≥ 7 | mm | |
| External Clearance | (for Option TV, 0.4” Lead Spacing) | ≥ 10 | mm |
| T Case Temperature | (Note 1) | 175 | °C |
| I Input Current (Note | 1) | 350 | mA |
| P Output Power (Note | 1) | 800 | mW |
| R Insulation Resistance | at T , V = 500 V (Note 1) | > 109 | Ω |
| safety ratings shall be ensured | by means of protective circuits. |
电气特性 Electrical Characteristics（TA = 25°C）
| 符号 | Characteristic | 测试条件 | 器件 | 最小 | 典型 | 最大 | 单位 |
|---|---|---|---|---|---|---|---|
| V Forward | Voltage (Note 3) | I = 10 mA | All | − | 1.15 | 1.50 | V |
| ΔV Forward | Voltage Temperature | All | − | −1.8 | − | mV/°C | |
| C | Junction Capacitance | V = 0 V, f = 1 MHz | All | − | 50 | − | pF |
| V = 1 V, f = 1 MHz | − | 65 | − | pF | |||
| BV | Breakdown Voltage | R = 1 MΩ, | MOC8204M | 400 | − | − | V |
| H11D1M | 300 | − | − | V | |||
| H11D3M | 200 | − | − | V | |||
| No RBE, I = 1.0 mA | 4N38M | 80 | − | − | V | ||
| BV | Collector to Base (Note 3) | I = 100 μA, I = 0 | MOC8204M | 400 | − | − | V |
| H11D1M | 300 | − | − | V | |||
| H11D3M | 200 | − | − | V | |||
| 4N38M | 80 | − | − | V | |||
| BV Emitter | to Base | I = 100 μA, I = 0 | 4N38M | 7 | − | − | V |
| BV Emitter | to Collector | I = 100 μA, I = 0 | All | 7 | 10 | − | V |
| I | Leakage Current Collector to | V = 300 V, I = 0, T = 25°C | MOC8204M | − | − | 100 | nA |
| BE | V = 300 V, I = 0, T = 100°C | − | − | 250 | μA | ||
| V = 200 V, I = 0, T = 25°C | H11D1M | − | − | 100 | nA | ||
| V = 200 V, I = 0, T = 100°C | − | − | 250 | μA | |||
| V = 100 V, I = 0, T = 25°C | H11D3M | − | − | 100 | nA | ||
| V = 100 V, I = 0, T = 100°C | − | − | 250 | μA | |||
| No R , V = 60 V, I = 0, T = | 25°C 4N38M | − | − | 50 | nA | ||
| CTR Current | Transfer Ratio, | I = 10 mA, V = 10 V, | H11D1M, | 2 (20) | − | − | mA (%) |
| I = 10 mA, V = 10 V | 4N38M | 2 (20) | − | − | mA (%) | ||
| V | Saturation Voltage (Note 3) | I = 10 mA, I = 0.5 mA, | H11D1M, | − | 0.1 | 0.4 | V |
| I = 20 mA, I = 4 mA | 4N38M | − | − | 1.0 | V |