产品应用与封装尺寸
图纸取自原厂规格书，点击可放大查看原始尺寸标注。
关键参数速览
- 正向电压 VF
- 2.1
- 反向电压 VR
- 500
- 正向电流 IF
- 8
产品特点 Features
- Ultrafast recovery
- Ultrasoft recovery Available
- Very low I RoHS*
- Very low Q COMPLIANT characteristics which result in performance which is
- PRODUCT SUMMARY ratings of 600 V and 8 A continuous current, the HFA08TB60
- V 600 V is especially well suited for use as the companion diode for
- IGBTs and MOSFETs. In addition to ultrafast recovery time,
- V at 8 A at 25 °C 1.7 V
- I 8 A peak recovery current (I ) and does not exhibit any
- F(AV) RRM tendency to “snap-off” during the t portion of recovery. The t (typical) 18 ns b
- T J (maximum) 150 °C with lower noise and significantly lower switching losses in both the diode and the switching transistor. These
- Q (typical) 65 nC
- HEXFRED advantages can help to significantly reduce dI /dt (typical) 240 A/µs
- (rec)M snubbing, component count and heatsink sizes. The
- HFA08TB60PbF
- Ultrafast Soft Recovery Diode, 8 A
绝对最大额定值 Absolute Maximum Ratings（TA = 25°C）
超过下表数值可能造成器件永久损坏，设计时请留余量。
| 参数 | 符号 | 测试条件 | 值 | 单位 |
|---|---|---|---|---|
| Cathode to anode voltage | V | 600 | V | |
| Maximum continuous forward | current I | T = 100 °C | 8 | |
| Single pulse forward current | I | 60 | A | |
| Maximum repetitive forward current | I | T = 25 °C | 24 36 | |
| Maximum power dissipation | P | T = 100 °C | 14 | W |
数据来源：原厂规格书
电气特性 Electrical Characteristics（TA = 25°C）
| 参数 | 符号 | 测试条件 | 最小 | 典型 | 最大 | 单位 |
|---|---|---|---|---|---|---|
| V I = | 100 µA | 600 | - | - | ||
| I = | 8.0 A | - | 1.4 | 1.7 | ||
| Maximum forward voltage | V I = | 16 A See | fig. 1 - | 1.7 | 2.1 | |
| I = | 8.0 A, T = 125 °C | - | 1.4 | 1.7 | ||
| I | See | fig. 2 | µA | |||
| leakage current | T J = | 125 °C, V R = 0.8 x V R rated | - | 100 | 500 | |
| Junction capacitance | C V | = 200 V See | fig. 3 - | 10 | 25 | pF |
| Series inductance | L | Measured lead to lead 5 mm from package | body - | 8.0 | - | nH |
| DYNAMIC | RECOVERY CHARACTERISTICS | (T = 25 °C unless | otherwise | specified) | ||
| t I = | 1.0 A, dI /dt = 200 A/µs, V = 30 V | - | 18 | - | ||
| t T | = 125 °C | - | 55 | 90 | ||
| I T | = 25 °C | - | 3.5 | 5.0 | ||
| I T | = 125 °C F | - | 4.5 | 8.0 | ||
| Q T | = 25 °C | - | 65 | 138 | ||
| Q T | = 125 °C | - | 124 | 360 | ||
| Peak rate of fall of recovery | dI (rec)M /dt1 T J | = 25 °C | - | 240 | - | |
| current during t b | dI (rec)M /dt2 T J | = 125 °C | - | 210 | - | |
| Lead temperature | T 0.063" | from case (1.6 mm) for 10 s | - | - | 300 | °C |
| R | - | - | 3.5 | |||
| R | Typical socket mount | - | - | 80 | K/W | |
| - | 2.0 | - | g | |||
| - | 0.07 | - | oz. | |||
| Mounting torque | - | |||||
| (5.0) | (10) | (lbf · in) | ||||
| Marking device | Case | style TO-220AC | HFA08TB60 |