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HMHA281R2 二极管、三极管等分立器件

arsenide infrared emitting diode driving a silicon phototransistor in a compact 4−pin mini−flat package. The lead pitch is 1.27 mm. arising out of the application or use of any product or circuit, and
正向电压 VF 1.3电流传输比 CTR 600正向电流 IF 50工作温度 TA −55 to +100

产品实拍图

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产品应用与封装尺寸

图纸取自原厂规格书,点击可放大查看原始尺寸标注。

引脚定义与内部结构

引脚符号名称
1A
2I
3EMITTER
4COLLECTOR
5V
7V
8I
数据来源:原厂规格书引脚图

关键参数速览

正向电压 VF
1.3
电流传输比 CTR
600
正向电流 IF
50
工作温度 TA
−55 to +100

产品特点 Features

  • Compact 4−Pin Package
  • ♦ 2.4 mm Maximum Standoff Height CATHODE 2 3 EMITTER
  • ♦ Half−Pitch Leads for Optimum Board Space Savings
  • HMHA281, HMHA2801 Series
  • Parameter Characteristics
  • Installation Classifications per DIN VDE 0110/1.89 Table 1, For Rated Mains Voltage < 150 V I–IV
  • < 300 V I–III
  • Pollution Degree (DIN VDE 0110/1.89) 2
  • Comparative Tracking Index 175
  • Symbol Parameter Value Unit
  • V PR Input−to−Output Test Voltage, Method A, V IORM x 1.6 = V PR , Type and Sample Test
  • 904 V with t = 10 s, Partial Discharge < 5 pC peak
  • Input−to−Output Test Voltage, Method B, V x 1.875 = V , 100% Production Test
  • IORM PR
  • 1060 V with t = 1 s, Partial Discharge < 5 pC peak

绝对最大额定值 Absolute Maximum Ratings(TA = 25°C)

超过下表数值可能造成器件永久损坏,设计时请留余量。

符号参数值单位
T StorageTemperature−55 to +125°C
T OperatingTemperature−55 to +100°C
T JunctionTemperature−40 to +125°C
P Total DevicePower Dissipation @ T = 25°C210mW
Derate Above25°C2.1mW/°C
I ContinuousForward Current50mA
I Peak ForwardCurrent (1 µs pulse, 300 pps)1A
P LED PowerDissipation @ T = 25°C60mW
Derate Above25°C0.6mW/°C
I ContinuousCollector Current50mA
V Collector−EmitterVoltage80V
V Emitter−CollectorVoltage7V
P Detector PowerDissipation @ T = 25°C150mW
Derate Above25°C1.5mW/°C
数据来源:原厂规格书

安全与绝缘额定值(DIN EN/IEC 60747−5−5)

符号参数值单位
HMHA281, HMHA2801Series
< 300 V I–III
Pollution Degree (DIN VDE 0110/1.89)2
Comparative Tracking Index175
V PR Input−to−OutputTest Voltage, Method A, V IORM x 1.6 = V PR , Type andSample Test 904V
with t = 10 s,Partial Discharge < 5 pCpeak
Input−to−OutputTest Voltage, Method B, V x 1.875 = V , 100%Production Test 1060V
with t = 1 s,Partial Discharge < 5 pCpeak
V Highest AllowableOver−Voltage4000 ≥5V
External Creepage≥5mm
External Clearance≥0.4mm
T Case Temperature(Note 1)150°C
I Input Current (Note1)200mA
P Output Power(Note 1)300mW
R IO Insulation Resistanceat T S , V IO = 500 V (Note 1)>109kΩ
HMHA281, HMHA2801Series

电气特性 Electrical Characteristics(TA = 25°C)

符号参数测试条件器件最小典型最大单位
V ForwardVoltageI = 10 mAAll1.0−1.3V
BV BreakdownVoltage Collector to EmitterI = 0.5 mA, I = 0All80−−V
BV Emitterto CollectorI = 100 µA, I = 0All7−−
I CollectorDark CurrentV = 80 V, I = 0All−−100nA
CCapacitanceV = 0 V, f = 1 MHzAll−10−pF
CTR DCCurrent Transfer RatioI = 5 mA, V = 5 VHMHA28150−600%
HMHA280180−600
HMHA2801A80−160
HMHA2801B130−260
HMHA2801C200−400
V SaturationVoltageI = 8 mA, I = 2.4 mAHMHA281−−0.4V
I = 10 mA, I = 2 mAHMHA2801,−−0.3
t RiseTime (Non−Saturated)I = 2 mA, V = 5 V, R = 100kΩ All−3−µs
t FallTime (Non−Saturated)I = 2 mA, V = 5 V, R = 100kΩ All−3−

特性曲线(Typical Performance Curves)

相关 / 可替代型号

以上型号来自规格书与型号命名比对,参数需以各自规格书为准;下单前请与销售确认封装与脚位。

应用领域 Applications

Digital Logic InputsON281Microprocessor InputsVXYYM1Power Supply Monitor281 = Device NumberTelephone Line ReceiverX = One−Digit Year Code, e.g., ”5”M1 = Assembly Package CodeHMHA281, HMHA2801 SeriesParameter Characteristics< 300 V I–III

资料下载

规格书为原厂公开资料,点击在新窗口打开下载。

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