Name: ONSEMI MOCD213R2M
Brand: ONSEMI
Availability: InStock

产品实拍图

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产品应用与封装尺寸

图纸取自原厂规格书，点击可放大查看原始尺寸标注。

引脚定义与内部结构

引脚	符号	名称
5	EMITTER
6	COLLECTOR
7	EMITTER
8	COLLECTOR

数据来源：原厂规格书引脚图

关键参数速览

正向电压 VF: 1.3
电流传输比 CTR: 200
隔离电压 VISO: 2500
工作温度 TA: −40 to +100

产品特点 Features

Temperature Minimum (Tsmin)
Temperature Maximum (Tsmax)
Time (t ) from (Tsmin to Tsmax)
Ramp−up Rate (t to t )
Liquidous Temperature (T )
Time (t ) Maintained Above (T )
Peak Body Package Temperature
Time (t ) within 5°C of 260°C
Ramp−down Rate (T to T )
Time 25°C to Peak Temperature
150°C
200°C
60 − 120 seconds
3°C/second maximum
217°C
60 − 150 seconds

绝对最大额定值 Absolute Maximum Ratings（TA = 25°C）

超过下表数值可能造成器件永久损坏，设计时请留余量。

符号	额定值	值	单位
T Storage Temperature		−40 to +125	°C
T Ambient Operating	Temperature	−40 to +100	°C
T Junction Temperature		−40 to +125	°C
T Lead Solder	Temperature	260 for 10 seconds	°C
P Total Device	Power Dissipation @ T = 25°C	240	mW
Derate Above	25°C	2.94	mW/°C
I Continuous	Forward Current	60	mA
I (pk) Forward Current	– Peak (PW = 100 µs, 120 pps)	1.0	A
P LED Power	Dissipation @ T = 25°C	90	mW
Derate Above	25°C	0.8	mW/°C
I Continuous	Collector Current	150	mA
V Collector−Emitter	Voltage	70	V
− MOCD207M,	MOCD208M, MOCD213M
− MOCD211M,	MOCD217M	30	V
V Emitter−Collector	Voltage	7	V
P Detector Power	Dissipation @ T = 25°C	150	mW
Derate Above	25°C	1.76	mW/°C

数据来源：原厂规格书

安全与绝缘额定值（DIN EN/IEC 60747−5−5）

符号	参数	值	单位
MOCD207M,	MOCD208M, MOCD211M,	MOCD213M, MOCD217M
Compliance with the safety	ratings shall be ensured by means of protective	circuits.
Installation Classifications per DIN	VDE 0110/1.89 Table 1, For Rated < 150 < 300	V I−IV V I−III
Pollution Degree (DIN VDE	0110/1.89)	2
Comparative Tracking Index		175
V Input−to−Output	Test Voltage, Method A, V x 1.6 = V ,	904	V
PR	IORM PR		peak
Type and Sample	Test with t = 10 s, Partial Discharge < 5 pC
Input−to−Output	Test Voltage, Method B, V x 1.875 = V ,	1060	V
100% Production	Test with t = 1 s, Partial Discharge < 5 pC
V Highest Allowable	Over−Voltage	4000	V
External Creepage		≥4	mm
External Clearance		≥4	mm
T Case Temperature	(Note 1)	150	°C
I Input Current	(Note 1)	200	mA
P Output Current	(Note 1)	300	mW
R Insulation	Resistance at T , V = 500 V (Note 1)	>109	kΩ
MOCD207M,	MOCD208M, MOCD211M,	MOCD213M, MOCD217M

电气特性 Electrical Characteristics（TA = 25°C）

符号	参数	器件	测试条件	最小	典型	最大	单位
V Input	Forward Voltage	MOCD217M	I = 1 mA	−	1.05	1.3	V
		MOCD213M	I = 10 mA	−	1.15	1.5	V
		MOCD207M,	I = 30 mA	−	1.25	1.5	V
C Input	Capacitance	All		−	18	−	pF
I	Collector−Emitter Dark Current	All	V = 10 V, T = 25°C	−	1.0	50	nA
			V = 10 V, T = 100°C	−	1.0	−	µA
BV	Collector−Emitter Breakdown	MOCD211M,	I = 100 µA	30	100	−	V
		MOCD207M,	I = 100 µA	70	100	−	V
BV	Emitter−Collector Breakdown	All	I = 100 µA	7	10	−	V
C	Collector−Emitter Capacitance	All	f = 1.0 MHz, V = 0	−	7	−	pF
CTR	Collector−Output Current	MOCD207M	I = 10 mA, V = 5 V	100	−	200	%
		MOCD208M	I = 10 mA, V = 5 V	40	−	125	%
		MOCD211M	I = 10 mA, V = 5 V	20	−	−	%
		MOCD213M	I = 10 mA, V = 5 V	100	−	−	%
		MOCD217M	I = 1 mA, V = 5 V	100	−	−	%
V	Collector−Emitter Saturation	MOCD207M,	I = 2 mA, I = 10 mA	−	−	0.4	V
		MOCD217M	I = 100 µA, I = 1 mA	−	−	0.4	V
t	Turn−On Time	All	I = 2 mA, V = 10 V,	−	7.5	−	µs
t	Turn−Off Time	All	I = 2 mA, V = 10 V,	−	5.7	−	µs
t Rise	Time	All	I = 2 mA, V = 10 V,	−	3.2	−	µs
t Fall	Time	All	I = 2 mA, V = 10 V,	−	4.7	−	µs
V	Input−Output Isolation Voltage	All	t = 1 Minute	2500	−	−	VAC
C	Isolation Capacitance	All	V = 0 V, f = 1 MHz	−	0.2	−	pF
R	Isolation Resistance	All	V = ±500 VDC, T = 25°C	1011	−	−	kΩ

特性曲线（Typical Performance Curves）

订货信息与供货形式

See	detailed	ordering	and	包装	information	in	the	封装
See	detailed	ordering	and	shipping	information	in	the	package

应用领域 Applications

for through−the−board mounting.Feedback Control CircuitsImpedances3 4 5General Purpose Switching CircuitsMonitor and Detection Circuits 1 − Logo2 − Device Number6 − Assembly Package CodeCATHODE 1 2 7 EMITTER 1

资料下载

📄 MOCD213R2M 规格书 PDF

规格书为原厂公开资料，点击在新窗口打开下载。

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MOCD213R2M 二极管、三极管等分立器件