关键参数速览
- 正向电压 VF
- 1.4
- 反向电压 VR
- 3 750
- 电流传输比 CTR
- 300
- 正向电流 IF
- 50
- 隔离电压 VISO
- 1011
产品特点 Features
- PS2701-1
MARKING EXAMPLE - No. 1 pin Mark R Company initial
- 2701 Type Number
- Assembly Lot
- N 3 01
- Week Assembled
- Year Assembled
- (Last 1 Digit)
绝对最大额定值 Absolute Maximum Ratings（TA = 25°C）
超过下表数值可能造成器件永久损坏，设计时请留余量。
| 参数 | 符号 | 额定值 | 单位 |
|---|---|---|---|
| Diode Forward Current (DC) | I | 50 | mA |
| Power Dissipation Derating | ΔP /°C | 0.8 | mW/°C |
| Power Dissipation | P | 80 | mW |
| Peak Forward Current*1 | I | 1 | A |
| Transistor Collector to Emitter Voltage | V | 40 | V |
| Emitter to Collector Voltage | V | 6 | V |
| Collector Current | I | 80 | mA |
| Power Dissipation Derating | ΔP /°C | 1.5 | mW/°C |
| Power Dissipation | P | 150 | mW |
| Isolation Voltage*2 | BV | 3 750 | Vr.m.s. |
| Operating Ambient Temperature | T | –55 to +100 | °C |
| Storage Temperature | T | –55 to +150 | °C |
| Package temperature | Tsi | 150 | °C |
| Current (input current I , Psi = 0) | Isi | 300 | mA |
| Power (output or total power dissipation) | Psi | 500 | mW |
| V = 500 V dc at T = Tsi Jan 23, 2013 | Ris MIN. | 109 | Ω |
数据来源：原厂规格书
安全与绝缘额定值（DIN EN/IEC 60747−5−5）
| 参数 | 符号 | Spec. | 单位 |
|---|---|---|---|
| test and U pr | 1 131 | V peak | |
| Test voltage (partial discharge test, procedure b for all | devices) U pr | 1 325 | V peak |
| U = 1.875 × U , P < 5 pC | |||
| Highest permissible overvoltage | U | 6 000 | V |
| Degree of pollution (DIN EN 60664-1 VDE0110 Part 1) | 2 | ||
| Comparative tracking index (IEC 60112/DIN EN 60112 Part 11)) | (VDE 0303 CTI | 175 | |
| Material group (DIN EN 60664-1 VDE0110 Part 1) | III a | ||
| Storage temperature range | T | –55 to +150 | °C |
| T | –55 to +100 | °C | |
| V = 500 V dc at T = 25°C | Ris MIN. | 1012 | Ω |
| V = 500 V dc at T MAX. at least 100°C | Ris MIN. | 1011 | Ω |
电气特性 Electrical Characteristics（TA = 25°C）
| 参数 | 符号 | 条件 | 最小 | 典型 | 最大 | 单位 |
|---|---|---|---|---|---|---|
| Diode Forward Voltage | V I = 5 | mA | 1.1 | 1.4 | V | |
| C V = 0 | V, f = 1 MHz | 30 | pF | |||
| I I = 0 | mA, V = 40 V | 100 | nA | |||
| CTR I = 5 | mA, V = 5 V | 50 | 100 | 300 | % | |
| V I = 10 | mA, I = 2 mA | 0.3 | V | |||
| Isolation Resistance | R V = | 1 kV | 1011 | Ω | ||
| C V = 0 | V, f = 1 MHz | 0.4 | pF | |||
| Rise Time*2 | t V = | 5 V, I = 2 mA, R = 100 | Ω | 3 | μs | |
| Fall Time*2 | t | 5 | ||||
| t on | 5 | |||||
| Turn-off Time*2 | t | 4 |
应用领域 Applications
产品应用与封装尺寸
图纸取自该型号原厂规格书的应用电路与封装尺寸章节，点击图片可放大查看原始尺寸标注。