产品实拍图
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引脚定义与内部结构
| 引脚 | 符号 | 名称 |
|---|---|---|
| 1 | A | |
| 2 | 500 | |
| 3 | 500 | |
| 4 | 000 | |
| 5 | V | |
| 6 | V |
数据来源：原厂规格书引脚图
关键参数速览
- 正向电压 VF
- 1.4
- 反向电压 VR
- 2 500
- 电流传输比 CTR
- 4 000
- 正向电流 IF
- 50
- 隔离电压 VISO
- 1011
- 工作温度 TA
- 109
产品特点 Features
- PS2733-1
- MARKING EXAMPLE
- R Trade Mark
- No.1 pin Mark
- 2733 Type Number
- Assembly Lot
- N 3 01
- Week Assembled
- Year Assembled(Last 1 Digit)
绝对最大额定值 Absolute Maximum Ratings（TA = 25°C）
超过下表数值可能造成器件永久损坏，设计时请留余量。
| 参数 | 符号 | 额定值 | 单位 |
|---|---|---|---|
| Diode Forward Current (DC) | I | 50 | mA |
| Power Dissipation Derating | P /C | 0.8 | mW/C |
| Power Dissipation | P | 80 | mW |
| Peak Forward Current*1 | I | 1 | A |
| Transistor Collector to Emitter Voltage | V | 350 | V |
| Emitter to Collector Voltage | V | 0.3 | V |
| Collector Current | I | 150 | mA |
| Power Dissipation Derating | P /C | 1.5 | mW/C |
| Power Dissipation | P | 150 | mW |
| Isolation Voltage*2 | BV | 2 500 | Vr.m.s. |
| Operating Ambient Temperature | T | –55 to +100 | C |
| Storage Temperature | T | –55 to +150 | C |
| Package temperature | Tsi | 150 | C |
| Current (input current I , Psi = 0) | Isi | 300 | mA |
| Power (output or total power dissipation) | Psi | 500 | mW |
| V IO = 500 V dc at T A = Tsi | Ris MIN. | 109 | |
数据来源：原厂规格书
安全与绝缘额定值（DIN EN/IEC 60747−5−5）
| 参数 | 符号 | 额定值 | 单位 |
|---|---|---|---|
| Test voltage (partial discharge test, procedure a for type | test and U pr | 1 131 | V peak |
| Upr = 1.6 U , P 5 pC | |||
| Test voltage (partial discharge test, procedure b for all | devices) Upr | 1 325 | V |
| U = 1.875 U , P 5 pC | |||
| Highest permissible overvoltage | U | 4 000 | V |
| Degree of pollution (IEC 60664-1/DIN EN 60664-1 (VDE | 0110-1)) | 2 | |
| Comparative tracking index (IEC 60112/DIN EN 60112 (VDE | 0303-11)) CTI | 175 | |
| Material group (IEC 60664-1/DIN EN 60664-1 (VDE 0110-1)) | III a | ||
| Storage temperature range | T | –55 to +150 | C |
| Operating temperature range | T | –55 to +100 | C |
| V IO = 500 V dc at T A = 25C | Ris MIN. | 1012 | |
| V IO = 500 V dc at T A MAX. at least 100C | Ris MIN. | 1011 | |
电气特性 Electrical Characteristics（TA = 25°C）
| 参数 | 符号 | 条件 | 最小 | 典型 | 最大 | 单位 |
|---|---|---|---|---|---|---|
| Diode Forward Voltage | V I = 10 | mA | 1.15 | 1.4 | V | |
| C V = 0 | V, f = 1.0 MHz | 30 | pF | |||
| I I = 0 | mA, V = 300 V | 400 | nA | |||
| CTR I = 1 | mA, V = 2 V | 1 500 | 4 000 | % | ||
| V I = 1 | mA, I = 2 mA | 1.0 | V | |||
| Isolation Resistance | R V = | 1.0 kV | 1011 | | ||
| C V = 0 | V, f = 1.0 MHz | 0.4 | pF | |||
| Rise Time*1 | t V = | 5 V, I = 10 mA, R = 100 | | 100 | s | |
| Fall Time*1 | t | 100 |