产品实拍图
本页为博科信现货实拍（器件丝印 见规格书）。图片已加防盗水印，需要最新批次照片或未加水印原图请联系销售；点击图片可放大。
产品应用与封装尺寸
图纸取自原厂规格书，点击可放大查看原始尺寸标注。
关键参数速览
- 正向电压 VF
- 1.4
- 反向电压 VR
- 2 500
- 正向电流 IF
- 30
- 隔离电压 VISO
- 2 500
产品特点 Features
- PIN CONNECTION
- PS2801C-1, PS2801C-4e
MARKING EXAMPLE - PS2801C-1
- Company initial
- Made in Taiwan
- Last 2 numbers of type
- No. : 1C
- Assembly Lot
- 3 0 1
- Week Assembled
- Year Assembled (Last 1 digit)
- Halogen free
- " " (Vertical bar)
- :Made in Taiwan & Halogen free
- Made in Japan
绝对最大额定值 Absolute Maximum Ratings（TA = 25°C）
超过下表数值可能造成器件永久损坏，设计时请留余量。
| 参数 | 符号 | 额定值 | 单位 |
|---|---|---|---|
| PS2801C-1 PS2801C-4 | |||
| Diode Forward Current (DC) | I | 30 | mA/ch |
| Power Dissipation Derating | ΔP /°C | 0.6 0.8 | mW/°C |
| Power Dissipation | P | 60 80 | mW/ch |
| Peak Forward Current *1 | I | 0.5 | A/ch |
| Transistor Collector to Emitter Voltage | V | 80 | V |
| Emitter to Collector Voltage | V | 5 | V |
| Collector Current | I | 30 | mA/ch |
| Power Dissipation Derating | ΔP /°C | 1.2 | mW/°C |
| Power Dissipation | P | 120 | mW/ch |
| Isolation Voltage *2 | BV | 2 500 | Vr.m.s. |
| Operating Ambient Temperature | T | −55 to +100 | °C |
| Storage Temperature | T | −55 to +150 | °C |
| Pins 1-2 shorted together, | 3-4 shorted together | (PS2801C-1). | |
| Pins 1-8 shorted together, Jan 9, 2013 | 9-16 shorted together | (PS2801C-4). | |
| Package temperature | Tsi | 150 | °C |
| Current (input current I , Psi = 0) | Isi | 300 | mA |
| Power (output or total power dissipation) | Psi | 500 | mW |
| V = 500 V dc at T = Tsi Jan 9, 2013 | Ris MIN. | 109 | Ω |
数据来源：原厂规格书
安全与绝缘额定值（DIN EN/IEC 60747−5−5）
| • | Ordering | 型号 | of | 包装 | product: | PS2801C-1-F3, | PS2801C-4-F3 | 1. | Anode | |
|---|---|---|---|---|---|---|---|---|---|---|
| CEO | PS2801C-1 4 3 | |||||||||
| • | Ordering | number | of | tape | product: | PS2801C-1-F3, | PS2801C-4-F3 | 1. | Anode |
电气特性 Electrical Characteristics（TA = 25°C）
| 参数 | 符号 | 条件 | 最小 | 典型 | 最大 | 单位 |
|---|---|---|---|---|---|---|
| Diode Forward Voltage | V I = | 5 mA | 1.2 | 1.4 | V | |
| Terminal Capacitance | C V = | 0 V, f = 1.0 MHz | 10 | pF | ||
| Transistor | I V | = 80 V, I = 0 mA | 100 | nA |