博科信光耦 BOKEXIN 博科信光耦BOKEXIN OPTOCOUPLER
首页 › 产品目录 › QCPL-A58JV-500E

QCPL-A58JV-500E 光耦

The Broadom QCPL-A58JV/JT is a high-voltage Photo MOSFET that is designed for automotive applications. QCPL-A58JV/JT consists of an AlGaAs infrared light-emitting diode (LED) input stage optically cou
正向电压 VF 1

产品实拍图

本型号暂无已核对的专属实拍图。为避免图文不符,本页不放同系列近似图;如需实物照片,请联系销售获取本批次实拍。

引脚定义与内部结构

引脚符号名称
3NC
4AN
5CA
6V
数据来源:原厂规格书引脚图

关键参数速览

正向电压 VF
1

产品特点 Features

  • The Broadom QCPL-A58JV/JT is a high-voltage Photo
  • MOSFET that is designed for automotive applications.
  • Photo MOSFET turns on (contact closes) with a minimum input current of 7 mA through the input LED. The Photo
  • MOSFET turns off (contact opens) with an input voltage of
  • 0.4V or less.
  •  Compact solid-state bidirectional signal switch
  •  Qualified to AEC-Q101 test guidelines
  •  Automotive temperature range:
  • T = –40°C to +105°C for QCPL-A58JV
  • T = –40°C to +125°C for QCPL-A58JT
  •  Breakdown voltage, BV DSS : 1500V at I DSS = 250 µA
  •  Avalanche rated MOSFETs
  •  Low off-state leakage:
  • I < 1 µA at V = 1000V for QCPL-A58JV
  • OFF DS
  • I < 5 µA at V = 1000V for QCPL-A58JT

绝对最大额定值 Absolute Maximum Ratings(TA = 25°C)

超过下表数值可能造成器件永久损坏,设计时请留余量。

参数符号最小最大单位备注
Storage TemperatureT–55150°C
Operating Ambient TemperatureT–40125°C
Junction TemperatureT–40150°C
Input Current AverageI—30mA T =–40°C to +125°C
Surge (50% dutycycle) I—60mA T =–40°C to +125°C
Peak Transient Input CurrentI—1A f =100 Hz, duty cycle = 0.1%
Input Power DissipationP—100mW
Output Load CurrentI—50mA
Output Avalanche CurrentI—0.6mA t =1 min, duty cycle = 0.1%,
cumulative of 5 minutes over
Output Power DissipationPo—1000mW
Lead Soldering Cycle Temperature—260°C
Time—10s
数据来源:原厂规格书

安全与绝缘额定值(DIN EN/IEC 60747−5−5)

型号型号2
QCPL-A58JV, QCPL-A58JT Data Sheetwith R2Coupler™ Isolation
QCPL-A58JV, QCPL-A58JT Data Sheetwith R2Coupler™ Isolation
QCPL-A58JV, QCPL-A58JT Data Sheetwith R2Coupler™ Isolation
Figure 1: LED Forward Current vs LED Forward VoltageFigure 2: LED Forward Current Threshold vs Ambient

电气特性 Electrical Characteristics(TA = 25°C)

参数符号器件最小典型最大单位测试条件Figure备注
Input Forward VoltageV1.251.551.85V I= 10 mA1
Output Withstand Voltage|V | O(OFF)15001700—V I= 250 µA, T = 25°C O A3a, b
Output Leakage CurrentIQCPL-A58JV—0.31000nAV = 1000V4a
QCPL-A58JT—0.35000nAV = 1000V4a
Output CapacitanceC—190—pFV = 0V, f = 1 MHz7a
Output ResistanceR—100300Ω I= 2 mA8
—100250Ω I= 10 mA8

应用领域 Applications

High VoltageOpto-IsolationQCPL-A58JV/JTGND1 GND2Turn On TimeAutomotive Photo MOSFETNC 1 16 D1

资料下载

规格书为原厂公开资料,点击在新窗口打开下载。

获取报价 / 申请样品

常备现货、免费送样、支持小批量试产。报出用量与封装要求,当天给报价与交期。

咨询此型号 · 现货询价

型号:QCPL-A58JV-500E 请报型号与数量
销售电话(点击直接拨号)
📞 0755-82811939点击拨号📞 0755-82812373点击拨号📞 0755-82811915点击拨号📞 0755-82811193点击拨号
企业 QQ(点击发起会话)
💬 QQ 2850611261点击会话💬 QQ 2355817597点击会话💬 QQ 3002728093点击会话💬 QQ 2355817598点击会话
营业时间:周一至周六 9:30 — 18:00
深圳市福田区华强北飞亚达大厦西座五楼501
产品图片放大预览
1 / 1
滚轮缩放 · 拖动平移 · 点击图片放大 2 倍 · ← → 切换 · Esc 关闭