关键参数速览
- 正向电压 VF
- 19
- 电源电压 VCC
- 35
- 工作温度 TA
- 125
产品特点 Features
- Rail-to-rail output voltage voltage to the IGBT by forcing the QCPL-WB3N output low during power-up. IGBTs typically require gate voltages of
- 15V to achieve their rated V voltage. At gate voltages
- CE(ON) below 13V typically, the V voltage increases
- (V ) is applied. Once V exceeds V (the positive-
- CC CC UVLO+ going UVLO threshold), the UVLO clamp is released to allow the device output to turn on in response to input signals.
- Thermal Model for QCPL-WB3N
- Stretched SO6 Package
- Optocoupler
- Definitions
- R : Junction to ambient thermal resistance of LED due to heating of LED.
- R : Junction to ambient thermal resistance of detector
- (output IC) due to heating of LED.
- (output IC) due to heating of detector (output IC).
- P : Power dissipation of LED (W).
- P : Power dissipation of detector/output IC (W).
- T : Junction temperature of LED (°C).
绝对最大额定值 Absolute Maximum Ratings（TA = 25°C）
超过下表数值可能造成器件永久损坏，设计时请留余量。
| 参数 | 符号 | 最小 | 最大 | 单位 | 备注 |
|---|---|---|---|---|---|
| Storage Temperature | T | –55 | 150 | °C | |
| Operating Temperature | T | –40 | 125 | °C | |
| Output IC Junction Temperature | T | — | 150 | °C | |
| Average Input Current | I | — | 25 | mA | a |
| Peak Transient Input Current (<1 µs pulse width, 300 | pps) I | — | 1 | A | |
| “High” Peak Output Current (105°C) | I | — | 4.0 | A | b |
| “High” Peak Output Current (125°C) | I | — | 3.5 | A | b |
| “Low” Peak Output Current (105°C) | I | — | 4.0 | A | b |
| “Low” Peak Output Current (125°C) | I | — | 3.5 | A | b |
| Total Output Supply Voltage | (V – V ) | 0 | 35 | V | |
| Input Current (Rise/Fall Time) | t / t | — | 500 | ns | |
| Output Voltage | V | –0.5 | V | V | |
| Output IC Power Dissipation | P | — | 700 | mW | c |
| Total Power Dissipation | P | — | 745 | mW | d |
| Lead Solder Temperature | 260° | C for 10 sec., | 1.6 mm below | seating | plane |
数据来源：原厂规格书
安全与绝缘额定值（DIN EN/IEC 60747−5−5）
| 说明 | 符号 | 包装 | 060 | 单位 |
|---|---|---|---|---|
| 3.5/4 | Amp Output Current IGBT Gate Drive | Optocoupler with | Rail-to-Rail | Output Voltage in |
| QCPL-WB3N Preliminary Data Sheet | QCPL-WB3N | Stretched SO6 | ||
| for rated mains voltage ≤150 V | I – | IV | ||
| for rated mains voltage ≤ 300 V | I – | IV | ||
| for rated mains voltage ≤ 450 V | I – | IV | ||
| for rated mains voltage ≤ 600 V | I – | IV | ||
| for rated mains voltage≤ 1000 V | I – | III | ||
| Pollution Degree (DIN VDE 0110/1.89) | 2 | |||
| Input to Output Test Voltage, Method ba | V PR | 2137 | V peak | |
| V × 1.875 = V , 100% Production Test with t = 1s, Partial | discharge < 5 pC | |||
| Input to Output Test Voltage, Method a* | V | 1824 | V | |
| V × 1.6 = V , Type and Sample Test, t = 10s, Partial discharge | < 5 pC | |||
| Highest Allowable Overvoltage (Transient Overvoltage t = 60s) | V | 8000 | V | |
| ini | IOTM | peak | ||
| Case Temperature | T | 175 | °C | |
| Input Current | I | 230 | mA | |
| Output Power | P | 600 | mW | |
| (External Clearance) | distance through air. | |||
| (External Creepage) | distance path along body. | |||
| (Internal Clearance) | straight line distance thickness | between | the emitter | and |
| Tracking Resistance CTI >175 V | DIN IEC 112/VDE 0303 Part 1 | |||
| Isolation Group IIIa | Material Group (DIN VDE 0110, | 1/89, Table | 1) | |
| Broadcom Confidential | QCPL-WB3N-DS101 |
电气特性 Electrical Characteristics（TA = 25°C）
| 参数 | 符号 | 最小 | 典型 | 最大 | 单位 | 测试条件 | Figure | 备注 |
|---|---|---|---|---|---|---|---|---|
| A | CC | EE | EE | |||||
| A | F(ON) | F(OFF) | ||||||
| High Level Peak Output Current | I | –1.0 | –2.8 | — | A V | = V – 4V | 3, 4, 20 | a |
| –3.0 | — | — | A V | – V ≤ 15V | b | |||
| Low Level Peak Output Current | I | 1.0 | 3.5 | — | A V | = V + 2.5V | 6, 7, 21 | a |
| 3.0 | — | — | A V | – V ≤ 15V | c | |||
| High Output Transistor RDS(ON) | R | — | 1.4 | 2.5 | I | = –3.0A | 8 | d |
| Low Output Transistor RDS(ON) | R | — | 0.6 | 1.5 | I | = 3.0A | 9 | d |
| High Level Output Voltage | V | V – 0.3 | V – 0.2 | — | V I | = –100 mA | 2, 4, 22 | e, f |
| OH | CC | CC | O | |||||
| High Level Output Voltage | V | — | V | — | V I | = 0 mA, I = 10 mA | 1 | |
| OH | CC | O | F | |||||
| Low Level Output Voltage | V | — | 0.1 | 0.2 | V I | = 100 mA | 5, 7, 23 | |
| High Level Supply Current | I | — | 1.9 | 3.0 | mA Rg I | = 10, Cg = 25 nF, = 10 mA | 10, 11 | |
| Low Level Supply Current | I | — | 1.9 | 3.0 | mA Rg | = 10, Cg = 25 nF, V | = | |
| Threshold Input Current Low | to I | — | 1.5 | 4.0 | mA Rg | = 10, Cg = 25 nF, V | > 12, 13, | |
| High | 5V | 24 | ||||||
| Threshold Input Voltage High | to V | 0.8 | — | — | V | |||
| Input Forward Voltage | V | 1.2 | 1.55 | 1.95 | V I | = 10 mA | 19 | |
| Temperature Coefficient of | Input V /T | — | –1.7 | — | mV/°C I | = 10 mA | ||
| Input Capacitance | C | — | 70 | — | pF f | = 1 MHz, V = 0 V | ||
| UVLO Threshold | V | 12.1 | 12.8 | 13.5 | V V | > 5V, I = 10 mA | 25 | |
| V | 11.1 | 11.8 | 12.4 | |||||
| UVLO Hysteresis | UVLO | — | 1.0 | — | V | |||
| d. Output is sourced at | –3.0A/3.0A with a maximum | pulse | width = 10 µs. | |||||
| OH | OH | CC OH | ||||||
| Broadcom Confidential | QCPL-WB3N-DS101 | |||||||
| 3.5/4 Amp | Output Current | IGBT Gate Drive Optocoupler | with Rail-to-Rail | Output Voltage in | ||||
| QCPL-WB3N Preliminary Data Sheet | Stretched SO6 | |||||||
| 3.5/4 Amp | Output Current | IGBT Gate Drive Optocoupler with | Rail-to-Rail Output | Voltage in | ||||
| QCPL-WB3N Preliminary Data Sheet | Stretched SO6 | |||||||
| Input-Output Momentary | V | 5000 | — | — | V RH | < 50%, t = 1 min., T = 25°C | b, c | |
| ISO | RMS | A |
订货信息与供货形式
| To | order, | choose | a | 型号 | 型号2 | from | the | 型号3 | 型号4 |
|---|---|---|---|---|---|---|---|---|---|
| Option | data | sheets | are | available. | Contact | your | Broadcom |