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STM32F030F4P6 存储芯片

3 Functional . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 CortexTM-M0 core with embedded Flash and SRAM . . . . . . . . . 12 . . . . . . . . . . . . . . . . . . .
原厂规格书参数现货供应

产品实拍图

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产品应用与封装尺寸

图纸取自原厂规格书,点击可放大查看原始尺寸标注。

引脚定义与内部结构

引脚符号名称
4Pinouts and pin
1The above figure shows the package top view.
数据来源:原厂规格书引脚图

产品特点 Features

  •  Core: ARM® 32-bit Cortex™-M0 CPU, frequency up to 48 MHz
  •  Memories
  • LQFP64 10x10 mm
  • TSSOP20
  • LQFP48 7x7 mm
  • 16 to 64 Kbytes of Flash memory
  • LQFP32 7x7 mm
  • 4 to 8 Kbytes of SRAM with HW parity checking – One 16-bit basic timer
  •  CRC calculation unit – Independent and system watchdog timers
  • SysTick timer: 24-bit downcounter
  •  Reset and power management
  • Voltage range: 2.4 V to 3.6 V  Calendar RTC with alarm and periodic wakeup from Stop/Standby
  • Power-on/Power down reset (POR/PDR)
  • Low power modes: Sleep, Stop, Standby  Communication interfaces
  •  Clock management – Up to two I2C interfaces: one supporting
  • Fast Mode Plus (1 Mbit/s) with 20 mA

绝对最大额定值 Absolute Maximum Ratings(TA = 25°C)

超过下表数值可能造成器件永久损坏,设计时请留余量。

符号额定值最小最大单位
Table 15. Voltagecharacteristics(1)
Externalmain supply voltage (including
V –V–0.34.0V
V –V Allowedvoltage difference for V >V -0.4V
DD DDADDDDA
V (2) Inputvoltage on TTa pinsV  0.34.0V
Inputvoltage on any other pinV 0.34.0V
|V | Variationsbetween different V powerpins -50mV
|V V |-50mV value(1)
数据来源:原厂规格书

电气特性 Electrical Characteristics(TA = 25°C)

6.1参数条件
Unless otherwisespecified, all voltages are referenced to V .
the selectedtemperature range).
Unless otherwisespecified, typical data are based on T = 25 °C, V = V = 3.3 V. They
Typical ADCaccuracy values are determined by characterization of a batch of samples from
Table 36. PLL characteristics
PLLinput clock(1) 1(2)- 24(2) MHz
PLLinput clock duty cycle 40(2)- 60(2) %
f PLLmultiplier output clock 16(2)- 48 MHz
t PLLlock time -- 200(2) µs
JitterCycle-to-cycle jitter -- 300(2) ps
The characteristicsare given at T = –40 to 85 °C unlessotherwise specified.
Table 37. Flash memorycharacteristics
t 16-bitprogramming time T –40 to +85 °C- 53.5 - µs
t Page (1KB) erase time T –40 to +85 °C- 30 - ms
t Mass erasetime T –40 to +85 °C- 30 - ms
Write mode- - 10 mA
I Supplycurrent
Erase mode- - 12 mA
V Programmingvoltage2.4 - 3.6 V
N EnduranceT = –40 to +85 °C (6 suffix versions)1 kcycles
t Dataretention 1 kcycle(2) at T = 85 °C20 Years
Susceptibility testsare performed on a sample basis duringdevice characterization.
V (1)-0.4
V (1)(3)-1.3
V (1)(3)-0.4
OLFM+FM+ modeIO
ECOPACK® is anST trademark.

特性曲线(Typical Performance Curves)

订货信息与供货形式

Thisdatasheetprovidestheorderinginformationandmechanical器件特性of
ThisSTM32F030x4,STM32F030x6,andSTM32F030x8datasheetshouldbe read in
conjunctionwiththeSTM32F0xxxxreferencemanual(RM0091).The referencemanualis
Forinformationon theARMCortex™-M0core,pleaserefer tothe Cortex™-M0Technical

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