产品应用与封装尺寸
图纸取自原厂规格书，点击可放大查看原始尺寸标注。
引脚定义与内部结构
| 引脚 | 符号 | 名称 |
|---|---|---|
| 3 | V | |
| 4 | EMITTER | |
| 5 | COLLECTOR | |
| 6 | BASE | |
| 7 | V |
数据来源：原厂规格书引脚图
关键参数速览
- 正向电压 VF
- 1.4
- 正向电流 IF
- 6-Pin
- 集电极-发射极电压 VCEO
- 100
- 工作温度 TA
- -40 to +100
产品特点 Features
- UL recognized (File # E90700) The MOC8100M, TIL111M and TIL117M optocouplers
- VDE recognized (File #102497 for white package) consist of a gallium arsenide infrared emitting diode driving a silicon phototransistor in a 6-pin dual in-line
- Add option V (e.g., TIL111VM) package. —
- TIL111M,
绝对最大额定值 Absolute Maximum Ratings（TA = 25°C）
超过下表数值可能造成器件永久损坏，设计时请留余量。
| 符号 | 参数 | 器件 | 值 | 单位 |
|---|---|---|---|---|
| MOC8100M | ||||
| T Storage | Temperature | All | -40 to +150 | °C |
| T Operating | Temperature | All | -40 to +100 | °C |
| T Lead | Solder Temperature | All | 260 for 10 sec | °C |
| P Total | Device Power Dissipation @ T = 25°C | All | 250 | mW |
| Derate | above 25°C | 2.94 | mW/°C | |
| I DC/Average | Forward Input Current | All | 60 | mA |
| MOC8100M, TIL117M | 6 | |||
| I (pk) Forward | Current – Peak (300µs, 2% Duty | Cycle) All | 3 | A |
| P LED Power | Dissipation @ T = 25 °C | All | 120 | mW |
| Derate | above 25°C | 1.41 | mW/°C | |
| DETECTOR | 6-Pin | |||
| V Collector-Emitter | Voltage | All | 30 | V |
| V CBO Collector-Base | Voltage | All | 70 | V Phototransistor |
| V Emitter-Collector | Voltage | TIL111M, TIL117M | 7 | V |
| V Emitter-Base | Voltage | All | 7 | |
| P Detector | Power Dissipation @ T = 25 °C | All | 150 | mW |
| Derate | above 25°C | 1.76 | mW/°C |
数据来源：原厂规格书
安全与绝缘额定值（DIN EN/IEC 60747−5−5）
| 符号 | Characteristic | 测试条件 | 最小 | Typ.* | 最大 | 单位 |
|---|---|---|---|---|---|---|
| V | Input-Output Isolation Voltage | f = 60Hz, t = 1 sec. | 7500 | V | ||
| R Isolation | Resistance | V = 500 VDC | 1011 | Ω | ||
| C Isolation | Capacitance | V = 0, f = 1MHz | 0.2 | pF |
电气特性 Electrical Characteristics（TA = 25°C）
| 符号 | 参数 | 测试条件 | 器件 | 最小 | Typ.* | 最大 | 单位 | TIL117M, |
|---|---|---|---|---|---|---|---|---|
| V Input | Forward Voltage | I = 16mA T = 25°C | TIL111M | 1.2 | 1.4 | V | ||
| I = 10mA for T = 0°C–70°C | MOC8100M, | 1.2 | 1.4 | |||||
| MOC8100M, | TIL117M | MOC8100M | ||||||
| T = -55°C | 1.32 | |||||||
| T = +100°C | 1.10 | |||||||
| V = 6.0V | MOC8100M | 0.001 | 10 | µA | ||||
| BV | Collector-Emitter | I = 1.0mA, I = 0 | All | 30 | 100 | V | ||
| CEO | C F | General | ||||||
| BV | Collector-Base | I = 10µA, I = 0 | All | 70 | 120 | V | ||
| BV | Emitter-Base Breakdown | I = 10µA, I = 0 | All | 7 | 10 | V | Purpose | |
| BV | Emitter-Collector | I = 100µA, I = 0 | TIL111M, TIL117M | 7 | 10 | V | ||
| I CEO | Collector-Emitter Dark | V CE = 10V, I F = 0 | TIL111M, TIL117M | 1 | 50 | nA | 6-Pin | |
| V = 5V, T = 25°C | MOC8100M | 0.5 | 25 | nA | ||||
| V = 30V, I = 0, T = 70°C | TIL117M, | 0.2 | 50 | µA | ||||
| CE F A | Phototransistor | |||||||
| I | Collector-Base Dark | V = 10V | TIL111M, TIL117M | 20 | nA | |||
| I | V = 5V | MOC8100M | 10 | nA | ||||
| C | Capacitance | V = 0V, f = 1MHz | All | 8 | pF |
特性曲线（Typical Performance Curves）
