引脚定义与内部结构
| 引脚 | 符号 | 名称 |
|---|---|---|
| 1 | Anode | |
| 3 | Cathode | |
| 4 | Emitter | |
| 5 | Collector | |
| 6 | Base |
数据来源：原厂规格书引脚图
关键参数速览
- 正向电压 VF
- 1.3
- 正向电流 IF
- 1.3
- 集电极-发射极电压 VCEO
- 80
- 工作温度 TA
- 50
绝对最大额定值 Absolute Maximum Ratings（TA = 25°C）
超过下表数值可能造成器件永久损坏，设计时请留余量。
| Characteristic | 符号 | 额定值 | 单位 |
|---|---|---|---|
| Forward current | IF | 50 | mA |
| Forward current derating (Ta≥53°C) | ΔIF / °C | −0.7 | mA / °C |
| Peak forward current (100μs pulse,100pps) | IFP | 1 | A |
| Junction temperature | Tj | 125 | °C |
| Collector−emitter voltage | VCEO | 80 | V |
| Collector−base voltage | VCBO | 80 | V |
| Emitter−collector voltage | VECO | 7 | V |
| Emitter−base voltage | VEBO | 7 | V |
| Collector current | IC | 50 | mA |
| Peak collector current (10ms pulse,100pps) | ICP | 100 | mA |
| Power dissipation | PC | 150 | mW |
| Power dissipation derationg (Ta ≥ 25°C) | ΔPC / °C | −1.5 | mW / °C |
| Junction temperature | Tj | 125 | °C |
| Storage temperature range | Tstg | −55~125 | °C |
| Operating temperature range | Topr | −55~100 | °C |
| Lead soldering temperature (10s) | Tsol | 260 | °C |
| Total package power dissipation | PT | 200 | mW |
| Total package power dissipation derating (Ta ≥ | 25°C) ΔPT / °C | −2.0 | mW / °C |
数据来源：原厂规格书
安全与绝缘额定值（DIN EN/IEC 60747−5−5）
| 最小 | 最大 |
|---|---|
| TLP131 2 2007-10-01 | |
| ICEO – Ta 101 10−1 5V rotcelloC | VCE(sat) – Ta 0.24 egatlov 0.08 0 |
| IC – Ta | Switching Time – RL |
| VCE = 5V 300 50 1mA 7 | Ta = 25℃ IF = 16mA tOFF 10 2007-10-01 |
电气特性 Electrical Characteristics（TA = 25°C）
| Characteristic | 符号 | 测试条件 | 最小 | 典型 | 最大 | 单位 |
|---|---|---|---|---|---|---|
| Forward voltage | VF IF | = 10 mA | 1.0 | 1.15 | 1.3 | V |
| Capacitance | CT V | = 0, f = 1 MHz | ― | 30 | ― | pF |
| V(BR)CEO IC | = 0.5mA | 80 | ― | ― | V | |
| V(BR)ECO IE | = 0.1mA | 7 | ― | ― | V | |
| Collector−base breakdown voltage | V(BR)CBO IC | = 0.1mA | 80 | ― | ― | V |
| Emitter−base breakdown voltage | V(BR)EBO IE | = 0.1mA | 7 | ― | ― | V |
| VCE = 48V | ― | 10 | 100 | nA | ||
| VCE = 48V,Ta = 85°C | ― | 2 | 50 | μA | ||
| Collector dark current | ICER | VC E = 4 8 V ,T a = 85°C | ― | 0.5 | 10 | μA |
| Collector dark current | ICBO | VCB = 10V | ― | 0.1 | ― | nA |
| DC forward current gain | hFE | VCE = 5V,IC = 0.5mA | ― | 400 | ― | ― |
| Capacitance (collector to emitter) | CCE V | = 0, f = 1MHz | ― | 10 | ― | pF |
| 50 | ― | 600 | ||||
| Current transfer ratio | IC / IF IF = 5 | mA, VC E = 5 V | % | |||
| 100 | ― | 600 | ||||
| ― | 60 | ― | ||||
| Saturated CTR | IC / IF (sat) IF = 1 | mA, VC R E a n = k 0 G .4 B V | % | |||
| 30 | ― | ― | ||||
| Base photo−current | IPB IF = | 5mA,VCB = 5V | ― | 10 | ― | μA |
| IC = 2.4 | mA, IF = 8 mA | ― | ― | 0.4 | ||
| saturation voltage | VCE (sat) IC = 0.2 | mA, IF = 1 mA | ― | 0.2 | ― | V |
| ― | ― | 0.4 | ||||
| Off−state collector current | IC (off) IF = 3 | 0.7mA, VCE = 48 V | ― | 1 | 10 | μA 2007-10-01 TLP131 |