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TLP182(GB-TPL,E(T 晶体管输出光耦

正向电压 VF 1.4电流传输比 CTR 600集电极-发射极电压 VCEO 80

产品实拍图

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引脚定义与内部结构

引脚符号名称
1Anode, Cathode
3Cathode, Anode
4Emitter
6Collector
5Mechanical Parameters
数据来源:原厂规格书引脚图

关键参数速览

正向电压 VF
1.4
电流传输比 CTR
600
集电极-发射极电压 VCEO
80

产品特点 Features

  • (1) Collector-emitter voltage: 80 V (min)
  • (2) Current transfer ratio: 50 % (min) (@I = ±0.5 mA, V = 5 V)
  • GB Rank: 100 % (min) (@I = ±0.5 mA, V = 5 V)
  • TLP182
  • 5. Mechanical Parameters
  • Characteristics Min Unit
  • Creepage distances 5.0 mm
  • Clearance 5.0
  • Internal isolation thickness 0.4
  • 6. Absolute Maximum Ratings (Note) (Unless otherwise specified, T = 25 ) aaaa
  • Characteristics Symbol Note Rating Unit
  • LED R.M.S. forward current I ±50 mA
  • F(RMS)
  • Input forward current derating (T ≥ 90 ) ∆I /∆T -1.11 mA/ a F a
  • Input forward current (pulsed) I (Note 1) ±1 A
  • Input power dissipation P 100 mW

安全与绝缘额定值(DIN EN/IEC 60747−5−5)

特性符号备注额定值单位
TLP182
Creepage distances 5.0mm
LED R.M.S. forward currentI±50mA
Input forward current derating (T ≥90 ) ∆I /∆T-1.11mA/
Input forward current (pulsed)I(Note 1)±1A
Input power dissipationP100mW
Input power dissipation (T ≥90 ) ∆P /∆T-2.22mW/
Junction temperatureT135
Detector Collector-emitter voltageV80V
Emitter-collector voltageV7V
Collector currentI50mA
Collector power dissipationP150mW
Collector power dissipation (T ≥25 ) ∆P /∆T-1.36mW/
Junction temperatureT135
Common Operating temperatureT-55 to 125
Storage temperatureT-55 to 125
Lead soldering temperature (10s) T260
Total power dissipationP200mW
Total power dissipation (T ≥25 ) ∆P /∆T-1.82mW/
Isolation voltage (AC, 60 s,R.H. ≤ 60 %) BV(Note 2)3750Vrms TLP182
Minimum creepagedistanceCr5.0 mm
Minimum clearanceCl5.0 mm
Comparative trackingindexCTI175
Maintenanceof thesafety data shall beensured by means ofprotective circuits.
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电气特性 Electrical Characteristics(TA = 25°C)

特性符号备注测试条件最小典型最大单位
LED Input forward voltageVI= ±10 mA1.11.251.4V
Input capacitanceCV= 0 V, f = 1 MHz60pF
Detector Collector-emitter breakdownVI= 0.5 mA80V
Emitter-collector breakdownVI= 0.1 mA7V
Dark CurrentIV= 48 V0.010.08µA
V= 48 V, T = 85 250µA
Collector-emitter capacitanceCV= 0 V, f = 1 MHz10pF TLP182
Current transfer ratioI /I(Note 1) I =±5 mA, V = 5 V50600%
I =±5 mA, V = 5 V, GB Rank100600
I =±0.5 mA, V = 5 V50600
I =±0.5 mA, V = 5 V, GBRank 100600
Saturated current transfer ratioI /II =±1 mA, V = 0.4 V60
I =±1 mA, V = 0.4 V, GBRank 30
Collector-emitter saturationvoltage VI =2.4 mA, I = ±8 mA0.3V
I =0.2 mA, I = ±1 mA0.2
I =0.2 mA, I = ±1 mA, GBRank 0.3
OFF-state collector currentIV= ±0.7 V, V = 48 V110µA
Collector current ratioI (ratio)SeeFig. 8.1.0.333 TLP182

应用领域 Applications

Switching Power SuppliesProgrammable Logic Controllers (PLCs)I/O Interface Boards2. GeneralTLP1825. Mechanical ParametersCharacteristics Min UnitCreepage distances 5.0 mmClearance 5.0Internal isolation thickness 0.4Characteristics Symbol Note Rating UnitLED R.M.S. forward current I ±50 mA

资料下载

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