Name: TOSHIBA TLP185(GB-TPR,E(O
Brand: TOSHIBA
Availability: InStock

产品实拍图

本型号暂无已核对的专属实拍图。为避免图文不符，本页不放同系列近似图；如需实物照片，请联系销售获取本批次实拍。

关键参数速览

超过下表数值可能造成器件永久损坏，设计时请留余量。

Characteristic	符号	额定值	单位
Forward current	IF	50	mA
Forward current derating (Ta ≥ 90°C)	ΔIF/°C	-1.5	mA/°C
Pulse forward current	(Note 1) IFP	1	A
Diode power dissipation	PD	100	mW
Diode power dissipation derating (Ta >90°C)	ΔPD/°C	-2.9	mW/°C
Junction temperature	Tj	125	°C
Collector-emitter voltage	VCEO	80	V
Emitter-collector voltage	VECO	7	V
Collector current	IC	50	mA
Collector power dissipation	PC	150	mW
Collector power dissipation derating (Ta ≥	25°C) ΔPC/°C	-1.5	mW/°C
Junction temperature	Tj	125	°C
Operating temperature range	Topr	-55 to 110	°C
Storage temperature range	Tstg	-55 to 125	°C
Lead soldering temperature (10 s)	Tsol	260	°C
Total package power dissipation	PT	200	mW
Total package power dissipation derating (Ta ≥	25°C) ΔPT/°C	-2.0	mW/°C
Isolation voltage (AC, 60 s, R.H. ≤ 60 %)	(Note 2) BVS	3750	Vrms

数据来源：原厂规格书

最小	最大
	TLP185

Characteristic	符号	测试条件	最小	典型	最大	单位
Forward voltage	VF IF	= 10 mA	1.1	1.25	1.4	V
Capacitance	CT V	= 0 V, f = 1 MHz	—	30	—	pF
Collector-emitter breakdown	voltage V(BR)CEO IC	= 0.5 mA	80	—	—	V
Emitter-collector breakdown	voltage V(BR)ECO IE	= 0.1 mA	7	—	—	V
		VCE = 48 V	—	0.01	0.08	μA
		VCE = 48 V, Ta = 85 °C	—	2	50	μA
Capacitance (collector to emitter)	CCE V	= 0 V, f = 1 MHz	—	10	—	pF
	IF	= 5 mA, VCE = 5 V	50	—	400	TLP185

规格书为原厂公开资料，点击在新窗口打开下载。

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