Name: TOSHIBA TLP759(J,F)
Brand: TOSHIBA
Availability: InStock

产品实拍图

本型号暂无已核对的专属实拍图。为避免图文不符，本页不放同系列近似图；如需实物照片，请联系销售获取本批次实拍。

引脚定义与内部结构

数据来源：原厂规格书引脚图

超过下表数值可能造成器件永久损坏，设计时请留余量。

Characteristic	符号	额定值	单位
Forward current	(Note 2) I	25	mA
Pulse forward current	(Note 3) I	50	mA
Peak transient forward current	(Note 4) I	1	A
Diode power dissipation	(Note 5) P	45	mW
Output current	I	8	mA
Peak output current	I	16	mA
Output voltage	V	Ω0.5~20	V
supply voltage	V	Ω0.5~30	V
Output power dissipation	(Note 6) P	100	mW
Operating temperature range	T opr	Ω55~100	°C
Storage temperature range	T stg	Ω55~125	°C
Lead solder temperature(10s)	(Note 7) T sol	260	°C

数据来源：原厂规格书

ΩkΩ	包装	(D4)	型号
			TLP759(IGM)
ΩkΩ	Option	(D4)	type
	VDE	approved:	DIN VDE0884 / 06.92,
	Highest		permissible over voltage: 6000VPK
	(Note	1) When	a VDE0884 approved type is needed,
			please designate the “Option (D4)”
ΩkΩ	Structural		parameter 7.62mm pich TLP759 (IGM)
	Creepage		distance: 7.0mm (min.)
	Clearance:		7.0mm (min.)
	(Note 2):	Derate	0.8mA above 70°C.
	(Note 3):	50%	duty cycle,1ms pulse width.
		Derate	1.6mA / °C above 70°C.
	(Note 4):	Pulse	width PW ≤ 1µs,300pps.
	(Note 5):	Derate	0.9mW / °C above 70°C.
	(Note 6):	Derate	2mW / °C above 70°C.
	(Note 7):	Soldering	portion of lead: Up to 2mm from the body of the device.
	(Note 8):	Device	considerd a two terminal device: Pins 1, 2, 3 and 4 shorted together and
			pins 5, 6, 7 and 8 shorted together. 2 2003-02-19

Characteristic	符号	测试条件	最小	典型	最大	单位
Forward voltage	V I	= 16mA		1.65	1.85	V
	∆V / ∆Ta I	= 16mA	―	Ω2	―	mV / °C
	C V	= 0,f = 1MHz	―	45	―	pF
	I I	= 0mA,V = V = 5.5V	―	3	500	nA
	I F	CC	―	―	5
rotceteD	I I F	= 0mA,V CC = 30V	―	―	50
	I I	= 0mA,V = 30V	―	0.01	1	µA
Supply voltage	V I	= 0.01mA	30	―	―	V
Output voltage	V I	= 0.5mA	20	―	―	V
	F	CC	25	35	75

规格书为原厂公开资料，点击在新窗口打开下载。

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