Name: TOSHIBA TLP781(D4-GR-TP6,F
Brand: TOSHIBA
Availability: InStock

产品实拍图

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关键参数速览

超过下表数值可能造成器件永久损坏，设计时请留余量。

Characteristic	符号	额定值	单位
Forward current	IF	60	mA
Forward current derating(Ta ≥ 39°C)	ΔIF / °C	−0.7	mA / °C
Pulse forward current	(Note 3) IFP	1	A
Power dissipation	PD	100	mW
Power dissipation derating	ΔPD / °C	−1.0	mW / °C
Junction temperature	Tj	125	°C
Collector−emitter voltage	VCEO	80	V
Emitter−collector voltage	VECO	7	V
rotceteD Collector current	IC	50	mA
Power dissipation(single circuit)	PC	150	mW
	ΔPC / °C	−1.5	mW / °C
(Ta ≥ 25°C)(single circuit)
Junction temperature	Tj	125	°C
Operating temperature range	Topr	−55~110	°C
Storage temperature range	Tstg	−55~125	°C
Lead soldering temperature (10s)	Tsol	260	°C
Total package power dissipation	PT	250	mW
(Ta ≥ 25°C)	ΔPT / °C	−2.5	mW / °C

数据来源：原厂规格书

TLP781F	:	10.16mm	pitch	型号	DIP4	单位	in
						Weight: 0.25g (typ.) TLP781F
VDE	approved	: DIN		EN60747-5-2
			Certificate	No.	40021173
(Note):	When	an	EN60747-5-2		approved type is needed,
	Please	designate		“Option	(D4)”
						Weight: 0.25g (typ.) 1 : Anode 2 : Cathode 3 : Emitter
					1	4 : Collector	2007-12-05

Characteristic	符号	测试条件	最小	典型	最大	单位
Forward voltage	VF IF	= 10 mA	1.0	1.15	1.3	V
Capacitance	CT V	= 0, f = 1 MHz	―	30	―	pF
breakdown voltage	V(BR) CEO IC	= 0.5 mA	80	―	―	V
breakdown voltage	V(BR) ECO IE	= 0.1 mA	7	―	―	V
		VCE = 24 V		0.01	0.1
		VCE = 24 V		0.6	50
	CCE V	= 0, f = 1 MHz	―	10	―	pF
			50	―	600
Current transfer ratio	IC / IF IF	= 5 mA, VC E = 5 V				%
			100	―	600
			―	60	―
Saturated CTR	IC / IF (sat) IF	= 1 mA, V CE = 0.4 V Rank	GB			%
			30	―	―
	IC	= 2.4 mA, IF = 8 mA	―	―	0.4
voltage	VCE (sat) IC	= 0.2 mA, IF = 1 mA	―	0.2	―	V
			―	―	0.4
					TLP781/TLP781F

包装	型号
Quantity Tape ecafrus	(must be a multiple of 2000) type 190

规格书为原厂公开资料，点击在新窗口打开下载。

常备现货、免费送样、支持小批量试产。报出用量与封装要求，当天给报价与交期。