Name: TOSHIBA TLP785(BLL,F
Brand: TOSHIBA
Availability: InStock

产品实拍图

本型号暂无已核对的专属实拍图。为避免图文不符，本页不放同系列近似图；如需实物照片，请联系销售获取本批次实拍。

引脚定义与内部结构

数据来源：原厂规格书引脚图

超过下表数值可能造成器件永久损坏，设计时请留余量。

特性	符号	额定值	单位
Forward current	IF	60	mA
Forward current derating (Ta ≥ 39°C)	ΔIF / °C	−0.7	mA / °C
Pulse forward current	(Note 2) IFP	1	A
Power dissipation	PD	90	mW
Power dissipation derating (Ta ≥ 39°C)	ΔPD / °C	−0.9	mW / °C
Junction temperature	Tj	125	°C
Collector−emitter voltage	VCEO	80	V
Emitter−collector voltage	VECO	7	V
rotceteD Collector current	IC	50	mA
Power dissipation (single circuit)	PC	150	mW
(Ta ≥ 25°C)	ΔPC / °C	−1.5	mW / °C
Junction temperature	Tj	125	°C
Operating temperature range	Topr	−55 to 110	°C
Storage temperature range	Tstg	−55 to 125	°C
Lead soldering temperature (10 s)	Tsol	260	°C
Total package power dissipation	PT	240	mW
(Ta ≥ 25°C)	ΔPT / °C	−2.4	mW / °C

数据来源：原厂规格书

备注	1	:	When	a	VDE	approved	型号	is	needed,
(AC:		5000	Vrms		(min)).
	TLP785F		is a	lead	forming	type	for	the	long creepage surface mounting
									Weight: 0.25 g (typ.)
					File	No.E67349
			please		designate	the		Option(D4).
								Standard	Type TLPxxxF Type
				Creepage	distance			7.0 mm	(min) 8.0 mm (min) TOSHIBA 11-5L102
				Clearance				7.0 mm	(min) 8.0 mm (min) Weight: 0.25 g (typ.)

特性	符号	测试条件	最小	典型	最大	单位
Forward voltage	VF IF	= 10 mA	1.0	1.15	1.3	V
Capacitance	CT V	= 0 V, f = 1 MHz	―	30	―	pF
	V(BR) CEO IC	= 0.5 mA	80	―	―	V
rotceteD	V(BR) ECO IE	= 0.1 mA	7	―	―	V
		VCE = 24 V	―	0.01	0.1	μA
		VCE = 24 V ,Ta = 85 °C	―	0.6	50	μA
Capacitance (collector to emitter)	CCE V	= 0 V, f = 1 MHz	―	6	―	pF
	IF	= 5 mA, VCE = 5 V	50	―	600
					TLP785,TLP785F

包装	型号
Quantity Tape	(must be a multiple of 4000) type

规格书为原厂公开资料，点击在新窗口打开下载。

常备现货、免费送样、支持小批量试产。报出用量与封装要求，当天给报价与交期。