Name: TOSHIBA TLP785(GB-TP6,F(C
Brand: TOSHIBA
Availability: InStock

产品实拍图

本页为博科信现货实拍（器件丝印见规格书）。图片已加防盗水印，需要最新批次照片或未加水印原图请联系销售；点击图片可放大。

关键参数速览

超过下表数值可能造成器件永久损坏，设计时请留余量。

Characteristic	符号	额定值	单位
Forward current	IF	60	mA
Forward current derating (Ta ≥ 39°C)	∆IF / °C	−0.7	mA / °C
Pulse forward current	(Note 3) IFP	1	A
Power dissipation	PD	90	mW
Power dissipation derating	∆PD / °C	−0.9	mW / °C
Junction temperature	Tj	125	°C
Collector−emitter voltage	VCEO	80	V
Emitter−collector voltage	VECO	7	V
rotceteD Collector current	IC	50	mA
Power dissipation (single circuit)	PC	150	mW
(Ta ≥ 25°C)	∆PC / °C	−1.5	mW / °C
Junction temperature	Tj	125	°C
Operating temperature range	Topr	−55 to 110	°C
Storage temperature range	Tstg	−55 to 125	°C
Lead soldering temperature (10s)	Tsol	260	°C
Total package power dissipation	PT	240	mW
(Ta ≥ 25°C)	∆PT / °C	−2.4	mW / °C

数据来源：原厂规格书

最小	最大
	TLP785,TLP785F
(Note 3): 100 μs pulse, 100 Hz frequency
(Note 4): AC, 1 min., R.H.≤ 60%. Apply voltage I - Ta 100 80 40 20 0	to LED pin and detector pin together. 2 2014-09-22 P - Ta 200 160 80 40 0
Ambient temperature Ta (˚C) -3	Ambient temperature Ta (˚C) 100
erutarepmet )C°/Vm( -2.2 -1.8 -1.4 drawroF -0.6	10 tnerruc 1 -1 0.1
Forward current IF (mA) PF 13	Forward voltage V (V) 100 2014-09-22

Characteristic	符号	测试条件	最小	典型	最大	单位
Forward voltage	VF IF	= 10 mA	1.0	1.15	1.3	V
Capacitance	CT V	= 0V, f = 1 MHz	―	30	―	pF
breakdown voltage	V(BR) CEO IC	= 0.5 mA	80	―	―	V
rotceteD breakdown voltage	V(BR) ECO IE	= 0.1 mA	7	―	―	V
		VCE = 24 V	―	0.01	0.1	μA
		VCE = 24 V ,Ta = 85°C	―	0.6	50	μA
Capacitance (collector to emitter)	CCE V	= 0V, f = 1 MHz	―	6	―	pF
	IF	= 5 mA, VCE = 5 V	50	―	600
					TLP785,TLP785F

包装	型号
Quantity Tape Time	(must be a multiple of 4000) type (s)
erutarepmet Time	190 (s)

规格书为原厂公开资料，点击在新窗口打开下载。

常备现货、免费送样、支持小批量试产。报出用量与封装要求，当天给报价与交期。