Name: TOSHIBA 2SK3564(STA4,Q,M)
Brand: TOSHIBA
Availability: InStock

产品实拍图

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关键参数速览

超过下表数值可能造成器件永久损坏，设计时请留余量。

特性	符号	额定值	单位	5.21
Drain-source voltage	V	900	V
Drain-gate voltage (R = 20 kΩ)	V	900	V
Gate-source voltage	V GSS	±30	V 51.0±46.0	1 2 3 6.2
DC (Note	1) I	3
Drain current Pulse (t = 1	ms) I	9	A
(Note	1) DP		1.	Gate
Drain power dissipation (Tc = 25°C)			2.	Drain
	P	40	W
(Note	E 2) AS	TBD	mJ
Avalanche current	I	3	A
Repetitive avalanche energy (Note	3) E	4.0	mJ
Channel temperature	T	150	°C
Storage temperature range	T stg	-55~150	°C JEITA	―
Thermal resistance, channel to	case R	3.125	°C/W
Thermal resistance, channel to	ambient R	62.5 1	°C/W	2003-02-14

数据来源：原厂规格书

特性	符号	测试条件	最小	典型	最大	单位
Gate leakage current	I V	= ±30 V, V = 0 V			±10	µA
Gate-source breakdown voltage	V I	=±10 µA, V = 0 V	±30			V
Drain cut-off current	I V	= 720 V, V = 0 V			100	µA
Drain-source breakdown voltage	V I	= 10 mA, V = 0 V	900			V
Gate threshold voltage	V V	= 10 V, I = 1 mA	2.0		4.0	V
Drain-source ON resistance	R V	= 10 V, I = 1.5 A		3.7	4.3	Ω
Forward transfer admittance	Y  V	= 20 V, I = 1.5 A	0.65	2.6		S
Input capacitance	C			700	
Output capacitance	C			75
		D	OUT 		
Rise time	t			20
Turn-on time	t on	4.7 Ω R L	= 	60	
Switching time			133 Ω			ns
Fall time	t	V	200 V	35
Turn-off time	t off	Duty < = 1%, t w = 10 µs		125	
Total gate charge	Q			17	
Gate-source charge	Q gs V DD	∼− 400 V, V GS = 10 V, I D = 3	A 	10		nC
Gate-drain charge	Q			7	
Forward voltage (diode)	V	I = 3 A, V = 0 V 2			−1.9	V 2003-02-14

10±0.3 2.7±0.2 φ3.2±0.2TENTATIVE2SK3564RESTRICTIONS ON PRODUCT USEHandbook” etc..3 2003-02-14

图纸取自该型号原厂规格书的应用电路与封装尺寸章节，点击图片可放大查看原始尺寸标注。

规格书为原厂公开资料，点击在新窗口打开下载。

常备现货、免费送样、支持小批量试产。报出用量与封装要求，当天给报价与交期。