产品应用与封装尺寸
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图纸取自原厂规格书，点击可放大查看原始尺寸标注。
引脚定义与内部结构
| 引脚 | 符号 | 名称 |
|---|---|---|
| 3 | A | |
| 4 | ECRUOS-NIARD | |
| 5 | A | |
| 6 | SOURCE |
数据来源：原厂规格书引脚图
关键参数速览
- 正向电压 VF
- −1.7
绝对最大额定值 Absolute Maximum Ratings（TA = 25°C）
超过下表数值可能造成器件永久损坏，设计时请留余量。
| 特性 | 符号 | 额定值 | 单位 |
|---|---|---|---|
| Drain-source voltage | VDSS | 900 | V |
| Drain-gate voltage (RGS = 20 kΩ) | VDGR | 900 | V |
| Gate-source voltage | VGSS | ±30 | V 1: Gate |
| DC (Note | 1) ID | 5 | 2: Drain |
| Drain current | A 3: Source | ||
| Pulse (t = 1 (Note | ms) IDP 1) | 15 | |
| Drain power dissipation (Tc = 25°C) | PD | 45 | W JEDEC ― |
| (Note | EAS 2) | 595 | mJ |
| Avalanche current | IAR | 5 | A |
| Repetitive avalanche energy (Note | 3) EAR | 4.5 | mJ |
| Channel temperature | Tch | 150 | °C |
| Storage temperature range | Tstg | -55~150 | °C |
| Thermal resistance, channel to | case Rth (ch-c) | 2.78 | °C/W |
| Thermal resistance, channel to | ambient Rth (ch-a) | 62.5 | °C/W |
数据来源：原厂规格书
电气特性 Electrical Characteristics（TA = 25°C）
| 特性 | 符号 | 测试条件 | 最小 | 典型 | 最大 | 单位 |
|---|---|---|---|---|---|---|
| Gate leakage current | IGSS VGS | = ±25 V, VDS = 0 V | ⎯ | ⎯ | ±10 | μA |
| Gate-source breakdown voltage | V (BR) GSS IG | =±10 μA, VDS = 0 V | ±30 | ⎯ | ⎯ | V |
| Drain cut-off current | IDSS VDS | = 720 V, VGS = 0 V | ⎯ | ⎯ | 100 | μA |
| Drain-source breakdown voltage | V (BR) DSS ID | = 10 mA, VGS = 0 V | 900 | ⎯ | ⎯ | V |
| Gate threshold voltage | Vth VDS | = 10 V, ID = 1 mA | 2.0 | ⎯ | 4.0 | V |
| Drain-source ON resistance | RDS (ON) VGS | = 10 V, ID = 3 A | ⎯ | 2.0 | 2.5 | Ω |
| Forward transfer admittance | ⎪Yfs⎪ VDS | = 20 V, ID = 3 A | 2.0 | 4.5 | ⎯ | S |
| Input capacitance | Ciss | ⎯ | 1150 | ⎯ | ||
| Output capacitance | Coss | ⎯ | 100 | ⎯ | ||
| 1 0 V ID = 3 A | VOUT | |||||
| Rise time | tr | ⎯ | 30 | ⎯ | ||
| Turn-on time | ton | RL | = ⎯ | 70 | ⎯ | |
| Switching time | 66.7 Ω | ns | ||||
| Fall time | tf | VDD ∼− | ⎯ 200 V | 60 | ⎯ | |
| Turn-off time | toff | Duty ≤ 1%, tw = 10 μs | ⎯ | 170 | ⎯ | |
| Total gate charge | Qg | ⎯ | 28 | ⎯ | ||
| Gate-source charge | Qgs VDD | ∼− 400 V, VGS = 10 V, ID = 5 | A ⎯ | 17 | ⎯ | nC |
| Gate-drain charge | Qgd | ⎯ | 11 | ⎯ | ||
| Forward voltage (diode) | VDSF | IDR = 5 A, VGS = 0 V | ⎯ | ⎯ | −1.7 | V |
| Not underlined: | [[Pb]]/INCLUDES > | MCV | ||||
| Underlined: [[G]]/RoHS | COMPATIBLE | or | [[G]]/RoHS | [[Pb]] | ||
| Please | contact your TOSHIBA | sales representative | for | details | as to | |
| environmental matters such as 2 | the RoHS | compatibility | of Product. | 2013-11-01 |