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FDV303N 栅极驱动光耦

This N-Channel logic level enhancement mode field effect transistor is produced using Fairchild's proprietary, high cell especially tailored to minimize on-state resistance. This device has been desig
原厂规格书参数现货供应

产品实拍图

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产品应用与封装尺寸

图纸取自原厂规格书,点击可放大查看原始尺寸标注。

产品特点 Features

  • 25 V, 0.22 A continuous, 0.5 A Peak.
  • R = 5 @ V = 2.7 V
  • DS(ON) GS
  • R = 4 @ V = 4.5 V.
  • Very low level gate drive requirements allowing direct operation in 3V circuits. V < 1.06V.

绝对最大额定值 Absolute Maximum Ratings(TA = 25°C)

超过下表数值可能造成器件永久损坏,设计时请留余量。

符号参数
FDV301N Units 25 V 8 V
-55 to 150 °C
数据来源:原厂规格书

电气特性 Electrical Characteristics(TA = 25°C)

符号参数条件最小典型最大单位
IZero Input Voltage Output CurrentV = 20 V, V = 0 V1µA
VInput VoltageV = 5 V, I = 10 µA0.5V
VV = 0.3 V, I = 0.005 A1V
ROutput to Ground ResistanceV = 2.7 V, I = 0.2 A45W
BVDrain-Source Breakdown VoltageV = 0 V, I = 250 µA25V
IZero Gate Voltage Drain CurrentV = 20 V, V = 0 V1µA
T = 55°C10µA
IGate - Body Leakage CurrentV = 8 V, V = 0 V100nA
VGate Threshold VoltageV = V , I = 250 µA0.700.851.06V
RStatic Drain-Source On-ResistanceV = 2.7 V, I = 0.2 A3.85W
T =125°C6.39
V = 4.5 V, I = 0.4 A3.14
IOn-State Drain CurrentV = 2.7 V, V = 5 V0.2A
gForward TransconductanceV = 5 V, I = 0.4 A0.2S
CInput CapacitanceV = 10 V, V = 0 V,9.5pF
COutput Capacitance6pF

应用领域 Applications

SOT-23 SuperSOTTM-6 SuperSOTTM-8Mark:301GS(th)Gate-Source Zener for ESD ruggedness.>6kV Human Body ModelSO-8 SOT-223 SOIC-16INVERTER APPLICATION VccIN G SS GND

资料下载

规格书为原厂公开资料,点击在新窗口打开下载。

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常备现货、免费送样、支持小批量试产。报出用量与封装要求,当天给报价与交期。

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型号:FDV303N 请报型号与数量
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