产品应用与封装尺寸

图纸取自原厂规格书,点击可放大查看原始尺寸标注。
产品特点 Features
- 1.8 A, 800 V, RDS(on) = 6.3 Ω (Max.) @ VGS = 10 V,
- ID = 0.9 A
- Low Gate Charge (Typ. 12 nC)
- Low Crss (Typ. 5.5 pF)
- 100% Avalanche Tested
绝对最大额定值 Absolute Maximum Ratings(TA = 25°C)
超过下表数值可能造成器件永久损坏,设计时请留余量。
| 符号 | 参数 |
|---|---|
| TC = 25°C unless otherwise noted | |
| V DSS Drain-Source | Voltage |
| I D Drain Current | - Continuous (T C = 25°C) |
| - Continuous (T = 100°C) | |
| I DM Drain Current | - Pulsed (Note 1) |
| V GSS Gate-Source | Voltage |
| E AS Single | Pulsed Avalanche Energy (Note 2) |
| I AR Avalanche | Current (Note 1) |
| E AR Repetitive | Avalanche Energy (Note 1) |
| dv/dt Peak Diode | Recovery dv/dt (Note 3) |
| P D Power | Dissipation (T A = 25°C) * |
| Power | Dissipation (T = 25°C) |
| - Derate above 25°C | |
| Maximum | lead temperature for soldering purposes, |
| L 1/8" from | case for 5 seconds |
| Thermal | Characteristics |
| RθJC Thermal | Resistance, Junction-to-Case, Max. |
| RθJA Thermal | Resistance, Junction-to-Ambient * |
| RθJA Thermal | Resistance, Junction-to-Ambient, Max. |
| FQD2N80 / FQU2N80 Unit 800 V 30 V 180 mJ 50 W | |
| -55 to +150 °C 300 °C | |
| FQD2N80 / FQU2N80 Unit 50 °C/W 110 °C/W |
数据来源:原厂规格书
电气特性 Electrical Characteristics(TA = 25°C)
| 符号 | 参数 | 测试条件 | 最小 | 典型 | 最大 | 单位 |
|---|---|---|---|---|---|---|
| BV DSS | Drain-Source Breakdown Voltage | V GS = 0 V, I D = 250 A | 800 | -- | -- | V |
| BV DSS Breakdown | Voltage Temperature | µ | FQU2N80 | |||
| ∆ | I D = 250 A, Referenced to | 25°C -- | 0.9 | -- | V/°C | |
| I DSS | V DS = 800 V, V GS = 0 V | -- | -- | 10 | µ A | |
| V DS = 640 V, T C = 125°C | -- | -- | 100 | µ A | ||
| I GSSF Gate-Body | Leakage Current, Forward | V GS = 30 V, V DS = 0 V | -- | -- | 100 | nA |
| V GS(th) Gate | Threshold Voltage | V DS = V GS , I D = 250 A | 3.0 | -- | 5.0 | V |
| R DS(on) Static | Drain-Source | V GS = 10 V, I D = 0.9 A | -- | 4.9 | 6.3 | Ω |
| g FS Forward | Transconductance | V DS = 50 V, I D = 0.9 A ( N | ote 4) -- | 2.4 | -- | S |
| C iss Input | Capacitance | V = 25 V, V = 0 V, | -- | 425 | 550 | pF |
| C oss Output | Capacitance | f = 1.0 MHz | -- | 45 | 60 | pF ® |
特性曲线(Typical Performance Curves)

