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FQD2N80TM MOSFET 场效应管

This N-Channel enhancement mode power MOSFET is (cid:127) 1.8 A, (cid:127) Low (cid:127) Low reduce on-state resistance, and to provide superior V, R = 6.3 Ω (Max.) @ V = 10 V, N-Channel Charge (Typ.
原厂规格书参数现货供应

产品实拍图

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产品应用与封装尺寸

图纸取自原厂规格书,点击可放大查看原始尺寸标注。

产品特点 Features

  • 1.8 A, 800 V, RDS(on) = 6.3 Ω (Max.) @ VGS = 10 V,
  • ID = 0.9 A
  • Low Gate Charge (Typ. 12 nC)
  • Low Crss (Typ. 5.5 pF)
  • 100% Avalanche Tested

绝对最大额定值 Absolute Maximum Ratings(TA = 25°C)

超过下表数值可能造成器件永久损坏,设计时请留余量。

符号参数
TC = 25°C unless otherwise noted
V DSS Drain-SourceVoltage
I D Drain Current- Continuous (T C = 25°C)
- Continuous (T = 100°C)
I DM Drain Current- Pulsed (Note 1)
V GSS Gate-SourceVoltage
E AS SinglePulsed Avalanche Energy (Note 2)
I AR AvalancheCurrent (Note 1)
E AR RepetitiveAvalanche Energy (Note 1)
dv/dt Peak DiodeRecovery dv/dt (Note 3)
P D PowerDissipation (T A = 25°C) *
PowerDissipation (T = 25°C)
- Derate above 25°C
Maximumlead temperature for soldering purposes,
L 1/8" fromcase for 5 seconds
ThermalCharacteristics
RθJC ThermalResistance, Junction-to-Case, Max.
RθJA ThermalResistance, Junction-to-Ambient *
RθJA ThermalResistance, Junction-to-Ambient, Max.
FQD2N80 / FQU2N80 Unit 800 V 30 V 180 mJ 50 W
-55 to +150 °C 300 °C
FQD2N80 / FQU2N80 Unit 50 °C/W 110 °C/W
数据来源:原厂规格书

电气特性 Electrical Characteristics(TA = 25°C)

符号参数测试条件最小典型最大单位
BV DSSDrain-Source Breakdown VoltageV GS = 0 V, I D = 250 A800----V
BV DSS BreakdownVoltage TemperatureµFQU2N80
∆I D = 250 A, Referenced to25°C --0.9--V/°C
I DSSV DS = 800 V, V GS = 0 V----10µ A
V DS = 640 V, T C = 125°C----100µ A
I GSSF Gate-BodyLeakage Current, ForwardV GS = 30 V, V DS = 0 V----100nA
V GS(th) GateThreshold VoltageV DS = V GS , I D = 250 A3.0--5.0V
R DS(on) StaticDrain-SourceV GS = 10 V, I D = 0.9 A--4.96.3Ω
g FS ForwardTransconductanceV DS = 50 V, I D = 0.9 A ( Note 4) --2.4--S
C iss InputCapacitanceV = 25 V, V = 0 V,--425550pF
C oss OutputCapacitancef = 1.0 MHz--4560pF ®

特性曲线(Typical Performance Curves)

资料下载

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