引脚定义与内部结构
| 引脚 | 符号 | 名称 |
|---|---|---|
| 1 | 10000 | |
| 2 | I | |
| 3 | O | |
| 4 | G | |
| 5 | G | |
| 6 | V |
数据来源:原厂规格书引脚图
关键参数速览
- 工作温度 TA
- ±125±1000/G
产品特点 Features
- Ω LOW OFFSET VOLTAGE: 50µV max
- Ω LOW DRIFT: 0.5µV/ΩC max
- LOW INPUT BIAS CURRENT: 5nA
- HIGH CMR: 120dB min
- Ω INPUTS PROTECTED TO kΩ40V
- Ω WIDE SUPPLY RANGE: kΩ2.25V to
- Ω LOW QUIESCENT CURRENT: 700µA
- 8-PIN PLASTIC DIP, SO-8
- The INA128 and INA129 are low power, general purpose instrumentation amplifiers offering excellent accuracy. The versatile 3-op amp design and small size make them ideal for a wide range of applications.
- Current-feedback input circuitry provides wide bandwidth even at high gain (200kHz at G = 100).
- A single external resistor sets any gain from 1 to 10,000.
- The INA128 provides an industry-standard gain equation; the INA129 gain equation is compatible with
绝对最大额定值 Absolute Maximum Ratings(TA = 25°C)
超过下表数值可能造成器件永久损坏,设计时请留余量。
| 参数 | 条件 | 最小 | 典型 | 最大 | 最小2 | 典型2 | 最大2 | 单位 |
|---|---|---|---|---|---|---|---|---|
| "#$ "#% |
数据来源:原厂规格书
电气特性 Electrical Characteristics(TA = 25°C)
| 参数 | 条件 | 最小 | 典型 | 最大 | 最小2 | 典型2 | 最大2 | 单位 |
|---|---|---|---|---|---|---|---|---|
| INA128P, U | INA128PA, | UA | ||||||
| INA129P. U | INA129PA, | UA | ||||||
| Initial | TA = +25°C | ±10±100/G | ±50±500/G | ±25±100/G | ±125±1000/G | µV | ||
| vs Temperature | TA = TMIN to TMAX | ±0.2±2/G | ±0.5±20/G | ±0.2±5/G | ±1±20/G | µV/°C | ||
| vs Power Supply | VS = ±2.25V to ±18V | ±0.2±20/G | ±1±100/G | ∗ | ±2±200/G | µV/V | ||
| Long-Term Stability | ±0.1±3/G | ∗ | µV/mo | |||||
| Impedance, Differential | 1010 || 2 | ∗ | Ω || pF | |||||
| Common-Mode | 1011 || 9 | ∗ | Ω || pF | |||||
| Common-Mode Voltage Range(1) | VO = 0V | (V+) − 2 | (V+) − 1.4 | ∗ | ∗ | V | ||
| (V−) + 2 | (V−) + 1.7 | ∗ | ∗ | V | ||||
| Safe Input Voltage | ±40 | ∗ | V | |||||
| G = 1 | 80 | 86 | 73 | ∗ | dB | |||
| G = 10 | 100 | 106 | 93 | ∗ | dB | |||
| G = 100 | 120 | 125 | 110 | ∗ | dB | |||
| G = 1000 | 120 | 130 | 110 | ∗ | dB | |||
| BIAS CURRENT | ±2 | ±5 | ∗ | ±10 | nA | |||
| vs Temperature | ±30 | ∗ | pA/°C | |||||
| Offset Current | ±1 | ±5 | ∗ | ±10 | nA | |||
| vs Temperature | ±30 | ∗ | pA/°C | |||||
| f = 10Hz | 10 | ∗ | nV/√Hz | |||||
| f = 100Hz | 8 | ∗ | nV/√Hz | |||||
| f = 1kHz | 8 | ∗ | nV/√Hz | |||||
| fB = 0.1Hz to 10Hz | 0.2 | ∗ | µVPP | |||||
| f = 10Hz | 0.9 | ∗ | pA/√Hz | |||||
| f = 1kHz | 0.3 | ∗ | pA/√Hz | |||||
| fB = 0.1Hz to 10Hz | 30 | ∗ | pAPP | |||||
| Gain Equation, INA128 | 1 + (50kΩ/RG ) | ∗ | V/V | |||||
| Gain Equation, INA129 | 1 + (49.4kΩ/RG ) | ∗ | V/V | |||||
| Range of Gain | 1 | 10000 | ∗ | ∗ | V/V | |||
| Gain Error | G = 1 | ±0.01 | ±0.024 | ∗ | ±0.1 | % | ||
| G = 10 | ±0.02 | ±0.4 | ∗ | ±0.5 | % | |||
| G = 100 | ±0.05 | ±0.5 | ∗ | ±0.7 | % | |||
| G = 1000 | ±0.5 | ±1 | ∗ | ±2 | % | |||
| Gain vs Temperature(2) | G = 1 | ±1 | ±10 | ∗ | ∗ | ppm/°C | ||
| 50kΩ (or 49.4kΩ) Resistance(2)(3) | ±25 | ±100 | ∗ | ∗ | ppm/°C | |||
| Nonlinearity | VO = ±13.6V, G = 1 | ±0.0001 | ±0.001 | ∗ | ±0.002 | % of FSR | ||
| G = 10 | ±0.0003 | ±0.002 | ∗ | ±0.004 | % of FSR | |||
| G = 100 | ±0.0005 | ±0.002 | ∗ | ±0.004 | % of FSR | |||
| G = 1000 | ±0.001 | (4) | ∗ | ∗ | % of FSR | |||
| INA128P, U | INA128PA, | UA | ||||||
| INA129P. U | INA129PA, | UA | ||||||
| Voltage: Positive | RL = 10kΩ | (V+) − 1.4 | (V+) − 0.9 | ∗ | ∗ | V | ||
| Voltage: Negative | RL = 10kΩ | (V−) + 1.4 | (V−) + 0.8 | ∗ | ∗ | V | ||
| Load Capacitance Stability | 1000 | ∗ | pF | |||||
| Short-Circuit Current | +6/−15 | ∗ | mA | |||||
| Bandwidth, −3dB | G = 1 | 1.3 | ∗ | MHz | ||||
| G = 10 | 700 | ∗ | kHz | |||||
| G = 100 | 200 | ∗ | kHz | |||||
| G = 1000 | 20 | ∗ | kHz | |||||
| Slew Rate | VO = ±10V, G = 10 | 4 | ∗ | V/µs | ||||
| Settling Time, 0.01% | G = 1 | 7 | ∗ | µs | ||||
| G = 10 | 7 | ∗ | µs | |||||
| G = 100 | 9 | ∗ | µs | |||||
| G = 1000 | 80 | ∗ | µs | |||||
| Overload Recovery | 50% Overdrive | 4 | ∗ | µs | ||||
| Voltage Range | ±2.25 | ±15 | ±18 | ∗ | ∗ | ∗ | V | |
| Current, Total | VIN = 0V | ±700 | ±750 | ∗ | ∗ | µA | ||
| Specification | −40 | +85 | ∗ | ∗ | °C | |||
| Operating | −40 | +125 | ∗ | ∗ | °C | |||
| Ω JA 8-Pin DIP | 80 | ∗ | °C/W | |||||
| SO-8 SOIC | 150 | ∗ | °C/W |
相关 / 可替代型号
以上型号来自规格书与型号命名比对,参数需以各自规格书为准;下单前请与销售确认封装与脚位。
应用领域 Applications
产品应用与封装尺寸


图纸取自该型号原厂规格书的应用电路与封装尺寸章节,点击图片可放大查看原始尺寸标注。
